Zobrazeno 1 - 10
of 236
pro vyhledávání: '"Henry H. Radamson"'
Autor:
Henry H. Radamson, Yuanhao Miao, Ziwei Zhou, Zhenhua Wu, Zhenzhen Kong, Jianfeng Gao, Hong Yang, Yuhui Ren, Yongkui Zhang, Jiangliu Shi, Jinjuan Xiang, Hushan Cui, Bin Lu, Junjie Li, Jinbiao Liu, Hongxiao Lin, Haoqing Xu, Mengfan Li, Jiaji Cao, Chuangqi He, Xiangyan Duan, Xuewei Zhao, Jiale Su, Yong Du, Jiahan Yu, Yuanyuan Wu, Miao Jiang, Di Liang, Ben Li, Yan Dong, Guilei Wang
Publikováno v:
Nanomaterials, Vol 14, Iss 10, p 837 (2024)
After more than five decades, Moore’s Law for transistors is approaching the end of the international technology roadmap of semiconductors (ITRS). The fate of complementary metal oxide semiconductor (CMOS) architecture has become increasingly unkno
Externí odkaz:
https://doaj.org/article/4ec18820053d48f8b361b57d88c68aa2
Autor:
Yuanhao Miao, Hongxiao Lin, Ben Li, Tianyu Dong, Chuangqi He, Junhao Du, Xuewei Zhao, Ziwei Zhou, Jiale Su, He Wang, Yan Dong, Bin Lu, Linpeng Dong, Henry H. Radamson
Publikováno v:
Nanomaterials, Vol 13, Iss 3, p 606 (2023)
Among photodetectors, avalanche photodiodes (APDs) have an important place due to their excellent sensitivity to light. APDs transform photons into electrons and then multiply the electrons, leading to an amplified photocurrent. APDs are promising fo
Externí odkaz:
https://doaj.org/article/dd0e15541ba34154bf07e1ad6be6565f
Autor:
Chen Li, Hongxiao Lin, Junjie Li, Xiaogen Yin, Yongkui Zhang, Zhenzhen Kong, Guilei Wang, Huilong Zhu, Henry H. Radamson
Publikováno v:
Nanoscale Research Letters, Vol 15, Iss 1, Pp 1-12 (2020)
Abstract Vertical gate-all-around field-effect transistors (vGAAFETs) are considered as the potential candidates to replace FinFETs for advanced integrated circuit manufacturing technology at/beyond 3-nm technology node. A multilayer (ML) of Si/SiGe/
Externí odkaz:
https://doaj.org/article/8b11493489934fcb81ee73ac7e1d9d85
Autor:
Yong Du, Wenqi Wei, Buqing Xu, Guilei Wang, Ben Li, Yuanhao Miao, Xuewei Zhao, Zhenzhen Kong, Hongxiao Lin, Jiahan Yu, Jiale Su, Yan Dong, Wenwu Wang, Tianchun Ye, Jianjun Zhang, Henry H. Radamson
Publikováno v:
Micromachines, Vol 13, Iss 10, p 1579 (2022)
The development of the low dislocation density of the Si-based GaAs buffer is considered the key technical route for realizing InAs/GaAs quantum dot lasers for photonic integrated circuits. To prepare the high-quality GaAs layer on the Si substrate,
Externí odkaz:
https://doaj.org/article/174102d112a741b28c7308bbd43ec1be
Autor:
Buqing Xu, Guilei Wang, Yong Du, Yuanhao Miao, Ben Li, Xuewei Zhao, Hongxiao Lin, Jiahan Yu, Jiale Su, Yan Dong, Tianchun Ye, Henry H. Radamson
Publikováno v:
Nanomaterials, Vol 12, Iss 15, p 2704 (2022)
The realization of high-performance Si-based III-V quantum-dot (QD) lasers has long attracted extensive interest in optoelectronic circuits. This manuscript presents InAs/GaAs QD lasers integrated on an advanced GaAs virtual substrate. The GaAs layer
Externí odkaz:
https://doaj.org/article/bff3db07284140e9b0b8ee73eea59212
Autor:
Mohammadreza Kolahdouz, Buqing Xu, Aryanaz Faghih Nasiri, Maryam Fathollahzadeh, Mahmoud Manian, Hossein Aghababa, Yuanyuan Wu, Henry H. Radamson
Publikováno v:
Micromachines, Vol 13, Iss 8, p 1257 (2022)
As the scaling technology in the silicon-based semiconductor industry is approaching physical limits, it is necessary to search for proper materials to be utilized as alternatives for nanoscale devices and technologies. On the other hand, carbon-rela
Externí odkaz:
https://doaj.org/article/c30f3cb3eaa04d81bf88a0c9093615c7
Autor:
Henry H. Radamson, Guilei Wang
Publikováno v:
Nanomaterials, Vol 12, Iss 12, p 1980 (2022)
In recent years, nanodevices have attracted a large amount of attention due to their low power consumption and fast operation in electronics and photonics, as well as their high sensitivity in sensor applications [...]
Externí odkaz:
https://doaj.org/article/3b79cf3723ca4e3ca47bcbce3850cecf
Autor:
Buqing Xu, Yong Du, Guilei Wang, Wenjuan Xiong, Zhenzhen Kong, Xuewei Zhao, Yuanhao Miao, Yijie Wang, Hongxiao Lin, Jiale Su, Ben Li, Yuanyuan Wu, Henry H. Radamson
Publikováno v:
Materials, Vol 15, Iss 10, p 3594 (2022)
In this manuscript, a novel dual-step selective epitaxy growth (SEG) of Ge was proposed to significantly decrease the defect density and to create fully strained relaxed Ge on a Si substrate. With the single-step SEG of Ge, the threading defect densi
Externí odkaz:
https://doaj.org/article/80d90ff530c541cd8ef55c4ea41b50b6
Publikováno v:
Frontiers in Materials, Vol 8 (2021)
In our environment, the large availability of wasted heat has motivated the search for methods to harvest heat. As a reliable way to supply energy, SiGe has been used for thermoelectric generators (TEGs) in space missions for decades. Recently, micro
Externí odkaz:
https://doaj.org/article/550040f4ad5a4d3e8a266839a4b656d6
Autor:
Buqing Xu, Guilei Wang, Yong Du, Yuanhao Miao, Yuanyuan Wu, Zhenzhen Kong, Jiale Su, Ben Li, Jiahan Yu, Henry H. Radamson
Publikováno v:
Nanomaterials, Vol 12, Iss 9, p 1403 (2022)
In this manuscript, the integration of a strained Ge channel with Si-based FinFETs was investigated. The main focus was the preparation of high-aspect-ratio (AR) fin structures, appropriate etching topography and the growth of germanium (Ge) as a cha
Externí odkaz:
https://doaj.org/article/6e003f0339c148d09086774c0e86a84c