Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Henry Aldridge"'
Autor:
Henry Aldridge, Mark E. Law, Kevin S. Jones, Yevgeniy Puzyrev, Cory C. Bomberger, Joshua M. O. Zide, A. G. Lind, Sokrates T. Pantelides
Publikováno v:
Materials Science in Semiconductor Processing. 62:171-179
Significant research effort has been placed into the use of III–V compound semiconductors, including InGaAs as channel materials in CMOS logic devices due to their superior electron mobilities compared to Si and other more conventional semiconducto
Autor:
Kevin S. Jones, Mark E. Law, Yevgeniy Puzyrev, A. G. Lind, Henry Aldridge, Sokrates T. Pantelides, Joshua M. O. Zide, Cory C. Bomberger
Publikováno v:
Materials Science in Semiconductor Processing. 57:39-47
Autor:
Russell M. Gwilliam, Henry Aldridge, A. G. Lind, Christopher Hatem, Kevin S. Jones, Yevgeniy Puzyrev, Mark E. Law, Sokrates T. Pantelides, Cory C. Bomberger, Joshua M. O. Zide
Publikováno v:
Journal of Electronic Materials. 45:4282-4287
Continued effort has been placed on maximizing activation while controlling the diffusion of silicon doping in InGaAs for present and future complementary metal-oxide semiconductor devices. In order to explore the diffusion and activation behavior, S
Publikováno v:
ECS Journal of Solid State Science and Technology. 5:Q125-Q131
An overview of various processing and dopant considerations for the creation of heavily-doped n-InGaAs is presented. A large body of experimental evidence and theoretical prediction point to dopant vacancy-complexing as the limiting mechanism for ele
Publikováno v:
ECS Journal of Solid State Science and Technology. 5:P3073-P3077
Autor:
Joshua M. O. Zide, Henry Aldridge, Kevin S. Jones, Chris Hatem, Cory C. Bomberger, A. G. Lind
Publikováno v:
ECS Transactions. 66:23-27
There is a renewed interest in integrating high mobility III-V channel materials into sub 10 nm nMOS devices but the continued scaling of devices has resulted in the need to create contacts and source/drains with ultra low contact resistivities in or
Publikováno v:
ECS Transactions. 66:57-61
There is significant research interest in the behavior of silicon as a dopant in InGaAs during processing conditions for possible integration into future CMOS devices. A major objective is obtaining low resistances for source and drain regions, which
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 35:021101
The injection of interstitials from oxidation of Si and SiGe has been investigated quantitatively using transmission electron microscope (TEM) to monitor the growth of a layer of implantation induced dislocation loops. The layer of loops was introduc
Autor:
V. Q. Truong, Thomas P. Martin, A. G. Lind, E. L. Kennon, Kevin S. Jones, Victoria C. Sorg, Henry Aldridge, Michael Thompson, C. Hatem
Publikováno v:
Journal of Applied Physics. 119:095705
Studies of implant activation in InAs have not been reported presumably because of challenges associated with junction leakage. The activation of 20 keV, Si+ implants into lightly doped (001) p-type bulk InAs performed at 100 °C as a function of ann
Autor:
James G. Webster, Lawrence W. Lichty, Len Ang, Josephine Langham, Janine Chrichley, Sean Cubitt, John Tulloch, Robert J. Thompson, Gary Burns, Katherine Henderson, Joseph Mazzeo, Richard Breyer, Peter Moller, Michael Schoonmaker, Curtis Holsopple, Newton Minow, James H. Duncan, Susan Tyler Eastman, Robert A. Klein, Kenneth Portnoy, Dwight Swain, Joye Swain, Seth Finn, Roy Gibson, Gerald Millerson, Martin Perlmutter, Steve R. Cartwright, Henry Aldridge, Lucy Liggett
Publikováno v:
Communication Booknotes. 22:117-120