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pro vyhledávání: '"Henry, M. D."'
Akademický článek
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We report transport measurements of electrons on helium in a microchannel device where the channels are 200 nm deep and 3 $\mu$m wide. The channels are fabricated above amorphous metallic Ta$_{40}$W$_{40}$Si$_{20}$, which has surface roughness below
Externí odkaz:
http://arxiv.org/abs/1807.00788
Publikováno v:
Angewandte Chemie. International Edition; November 2005, Vol. 44 Issue: 45 p7442-7447, 6p
Encapsulation layers are explored for passivating the surfaces of silicon to reduce optical absorption in the 1500-nm wavelength band. Surface-sensitive test structures consisting of microdisk resonators are fabricated for this purpose. Based on prev
Externí odkaz:
http://arxiv.org/abs/0707.0415
Publikováno v:
The American Catholic Sociological Review, 1955 Oct 01. 16(3), 221-222.
Externí odkaz:
https://www.jstor.org/stable/3709487
Autor:
Hendratta Ali, Manika Prasad, Ahmed Ismail, Njilah Isaac Konfor, Yene Atangana Joseph-Quentin, Oluseun Adetola Sanuade, Henry M. D. Agbogun, Mbida Yem, Alice Magha
Publikováno v:
Second International Meeting for Applied Geoscience & Energy.
Autor:
ZINK PL
Publikováno v:
Journal of the American Medical Women's Association [J Am Med Womens Assoc] 1959 Nov; Vol. 14, pp. 1019.
Autor:
P L, ZINK
Publikováno v:
Journal of the American Medical Women's Association. 14
Autor:
William Henry
Publikováno v:
Abstracts of the Papers Printed in the Philosophical Transactions of the Royal Society of London. 1:345-346
Dr. Henry having detected a fallacy in the experiments lately communicated to the Society, in which oxygen gas appeared to be evolved from ammonia by electric discharges, has repeated the experiments with more care, and is now satisfied that no porti
Publikováno v:
Implantable Sensors and Systems ISBN: 9783319697475
Implantable Sensors and Systems
Implantable Sensors and Systems
In the quest for ever-reducing system size and increased integration and functionality, application-specific integrated circuit (ASIC) technology plays a pivotal role in modern implants, where custom circuits designed at transistor and device levels
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e72de98c3bb6a3eee019db9145bcb6e9
https://doi.org/10.1007/978-3-319-69748-2_5
https://doi.org/10.1007/978-3-319-69748-2_5