Zobrazeno 1 - 10
of 132
pro vyhledávání: '"Henning Fouckhardt"'
Publikováno v:
Advances in Materials Science and Engineering, Vol 2023 (2023)
Reflectance anisotropy/difference spectroscopy (RAS/RDS) had been developed for monitoring epitaxial semiconductor growth, especially for the metal-organic chemical vapor deposition (MOCVD) of III/V semiconductors. But RAS is also well suited for the
Externí odkaz:
https://doaj.org/article/cd1241f7ad484f93ab9efaa6f7d6fd18
Publikováno v:
Advances in Materials Science and Engineering, Vol 2022 (2022)
Reactive ion etching (RIE) of group IV or III/V semiconductors is an important step in many lithographic processes in semiconductor technology. Typically, surface roughness is undesired, but more and more applications arise where rough surfaces are u
Externí odkaz:
https://doaj.org/article/ee2a267d9bad424482888408af43e81a
Publikováno v:
International Journal of Analytical Chemistry, Vol 2022 (2022)
Electrically conducting liquid droplets can be activated and moved by electrowetting-on-dielectric (EWOD) and optoelectrowetting (OEW). An important application is droplet manipulation in digital microfluidics (DMF, lab-on-a-chip 2.0) as a chip-sized
Externí odkaz:
https://doaj.org/article/51a8dca7f43f4350a2808b0101c5e1e2
Publikováno v:
AIP Advances, Vol 11, Iss 6, Pp 065130-065130-10 (2021)
Scattering and scattering plates have a large diversity of applications. Scattering of optical and THz electromagnetic waves can be performed with Galois scattering plates, which had found applications in acoustics first (i.e., with sound waves in co
Externí odkaz:
https://doaj.org/article/93f9f7f0b41c44b8b2150937ad6f28c2
Publikováno v:
Advances in Materials Science and Engineering, Vol 2021 (2021)
We present a study of optoelectronically active Ga(As)As quantum dots (QDs) on Al-rich AlxGa1-xAs layers with Al concentrations up to x = 90%. So far, however, it has not been possible to grow optoelectronically active Ga(As)As QDs epitaxially direct
Externí odkaz:
https://doaj.org/article/5b05268a42a046f998aca48278e60608
Publikováno v:
International Journal of Analytical Chemistry, Vol 2021 (2021)
Meanwhile, electrowetting-on-dielectric (EWOD) is a well-known phenomenon, even often exploited in active micro-optics to change the curvature of microdroplet lenses or in analytical chemistry with digital microfluidics (DMF, lab on a chip 2.0) to mo
Externí odkaz:
https://doaj.org/article/cb930afe90f646a2bd1bf0df99b3ec2f
Publikováno v:
AIP Advances, Vol 9, Iss 7, Pp 075116-075116-6 (2019)
A measurement technique, i.e. reflectance anisotropy/difference spectroscopy (RAS/RDS), which had originally been developed for in-situ epitaxial growth control, is employed here for in-situ real-time etch-depth control during reactive ion etching (R
Externí odkaz:
https://doaj.org/article/e0ff2cae7c6e499eac19d6233623567a
Autor:
Guilherme Sombrio, Emerson Oliveira, Johannes Strassner, Johannes Richter, Christoph Doering, Henning Fouckhardt
Publikováno v:
Micromachines, Vol 12, Iss 5, p 502 (2021)
Reflectance anisotropy spectroscopy (RAS), which was originally invented to monitor epitaxial growth, can—as we have previously shown—also be used to monitor the reactive ion etching of III/V semiconductor samples in situ and in real time, as lon
Externí odkaz:
https://doaj.org/article/384a1b5e0ce349f58bc05d173e6e0965
Autor:
Ann-Kathrin Kleinschmidt, Lars Barzen, Johannes Strassner, Christoph Doering, Henning Fouckhardt, Wolfgang Bock, Michael Wahl, Michael Kopnarski
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 7, Iss 1, Pp 1783-1793 (2016)
Reflectance anisotropy spectroscopy (RAS) equipment is applied to monitor dry-etch processes (here specifically reactive ion etching (RIE)) of monocrystalline multilayered III–V semiconductors in situ. The related accuracy of etch depth control is
Externí odkaz:
https://doaj.org/article/08c4ab3abe1f4c8092f9d3d388b5ce0c
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 2, Iss 1, Pp 333-338 (2011)
GaAsSb quantum dots (QDs) were grown on GaAs in the Stranski–Krastanov (SK) epitaxial mode. Their characteristics were dependent on the Sb/Ga (V/III) flux ratio and the growth temperature. The samples were grown with a V/III ratio between 0.45/1 an
Externí odkaz:
https://doaj.org/article/9483420d591d4ae299c895c7ee96e040