Interlayer Exciton-Phonon Bound State in Bi 2 Se 3 /Monolayer WS 2 van der Waals Heterostructures.

Autor: Hennighausen Z; NRC Postdoc at the Materials Science and Technology Division, Naval Research Laboratory, Washington, D.C. 20375, United States., Moon J; NRC Postdoc at the Materials Science and Technology Division, Naval Research Laboratory, Washington, D.C. 20375, United States., McCreary KM; Materials Science and Technology Division, Naval Research Laboratory, Washington, D.C. 20375, United States., Li CH; Materials Science and Technology Division, Naval Research Laboratory, Washington, D.C. 20375, United States., van 't Erve OMJ; Materials Science and Technology Division, Naval Research Laboratory, Washington, D.C. 20375, United States., Jonker BT; Materials Science and Technology Division, Naval Research Laboratory, Washington, D.C. 20375, United States.

Publikováno v: ACS nano [ACS Nano] 2023 Feb 14; Vol. 17 (3), pp. 2529-2536. Date of Electronic Publication: 2023 Jan 16.

Laser-Patterned Submicrometer Bi 2 Se 3 -WS 2 Pixels with Tunable Circular Polarization at Room Temperature.

Autor: Hennighausen Z; NRC Postdoc Residing at the Materials Science and Technology Division, United States Naval Research Laboratory, Washington, D.C. 20375, United States., Wickramaratne D; Materials Science and Technology Division, United States Naval Research Laboratory, Washington, D.C. 20375, United States., McCreary KM; Materials Science and Technology Division, United States Naval Research Laboratory, Washington, D.C. 20375, United States., Hudak BM; Materials Science and Technology Division, United States Naval Research Laboratory, Washington, D.C. 20375, United States., Brintlinger T; Materials Science and Technology Division, United States Naval Research Laboratory, Washington, D.C. 20375, United States., Chuang HJ; Nova Research, Inc., Alexandria, Virginia 22308, United States., Noyan MA; Materials Science and Technology Division, United States Naval Research Laboratory, Washington, D.C. 20375, United States., Jonker BT; Materials Science and Technology Division, United States Naval Research Laboratory, Washington, D.C. 20375, United States., Stroud RM; Materials Science and Technology Division, United States Naval Research Laboratory, Washington, D.C. 20375, United States., van 't Erve OM; Materials Science and Technology Division, United States Naval Research Laboratory, Washington, D.C. 20375, United States.

Publikováno v: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2022 Feb 23; Vol. 14 (7), pp. 9504-9514. Date of Electronic Publication: 2022 Feb 14.

Direct-Write of Nanoscale Domains with Tunable Metamagnetic Order in FeRh Thin Films.

Autor: Cress CD; Electronics Science and Technology Division, United States Naval Research Laboratory, Washington, DC 20375, United States., Wickramaratne D; NRC Postdoc Residing at the Materials Science and Technology Division, United States Naval Research Laboratory, Washington, DC 20375, United States., Rosenberger MR; Materials Science and Technology Division, United States Naval Research Laboratory, Washington, DC 20375, United States., Hennighausen Z; NRC Postdoc Residing at the Materials Science and Technology Division, United States Naval Research Laboratory, Washington, DC 20375, United States., Callahan PG; Materials Science and Technology Division, United States Naval Research Laboratory, Washington, DC 20375, United States., LaGasse SW; NRC Postdoc Residing at the Electronics Science and Technology Division, United States Naval Research Laboratory, Washington, DC 20375, United States., Bernstein N; Materials Science and Technology Division, United States Naval Research Laboratory, Washington, DC 20375, United States., van 't Erve OM; Materials Science and Technology Division, United States Naval Research Laboratory, Washington, DC 20375, United States., Jonker BT; Materials Science and Technology Division, United States Naval Research Laboratory, Washington, DC 20375, United States., Qadri SB; Materials Science and Technology Division, United States Naval Research Laboratory, Washington, DC 20375, United States., Prestigiacomo JC; Materials Science and Technology Division, United States Naval Research Laboratory, Washington, DC 20375, United States., Currie M; Optical Sciences Division, United States Naval Research Laboratory, Washington, DC 20375, United States., Mazin II; Department of Physics and Astronomy and the Quantum Materials Center, George Mason University, Fairfax, Virginia 22030, United States., Bennett SP; Materials Science and Technology Division, United States Naval Research Laboratory, Washington, DC 20375, United States.

Publikováno v: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2021 Jan 13; Vol. 13 (1), pp. 836-847. Date of Electronic Publication: 2020 Nov 20.

Oxygen-Induced In Situ Manipulation of the Interlayer Coupling and Exciton Recombination in Bi 2 Se 3 /MoS 2 2D Heterostructures.

Autor: Hennighausen Z, Lane C, Benabbas A, Mendez K, Eggenberger M, Champion PM, Robinson JT; Naval Research Laboratory , Washington , District of Columbia 20375 , United States., Bansil A, Kar S

Publikováno v: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2019 May 01; Vol. 11 (17), pp. 15913-15921. Date of Electronic Publication: 2019 Apr 19.

Tunable and laser-reconfigurable 2D heterocrystals obtained by epitaxial stacking of crystallographically incommensurate Bi 2 Se 3 and MoS 2 atomic layers.

Autor: Vargas A; Department of Physics, Northeastern University, Boston, MA 02115, USA., Liu F; Department of Physics, Northeastern University, Boston, MA 02115, USA.; Materials Synthesis and Integrated Devices Group (MPA-11), Los Alamos National Laboratory, Los Alamos, NM 87545, USA., Lane C; Department of Physics, Northeastern University, Boston, MA 02115, USA., Rubin D; Department of Physics, Northeastern University, Boston, MA 02115, USA., Bilgin I; Department of Physics, Northeastern University, Boston, MA 02115, USA., Hennighausen Z; Department of Physics, Northeastern University, Boston, MA 02115, USA., DeCapua M; Department of Physics, Northeastern University, Boston, MA 02115, USA., Bansil A; Department of Physics, Northeastern University, Boston, MA 02115, USA., Kar S; Department of Physics, Northeastern University, Boston, MA 02115, USA.; Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, PR China.

Publikováno v: Science advances [Sci Adv] 2017 Jul 14; Vol. 3 (7), pp. e1601741. Date of Electronic Publication: 2017 Jul 14 (Print Publication: 2017).