Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Henk-Jan H. Smilde"'
Autor:
Maryana Escalante Marun, Steven Welch, Frank Staals, Stuart Young, Stefan Geerte Kruijswijk, Stefan Petra, Bart Segers, Arie Jeffrey Den Boef, Bastiaan Onne Fagginger Auer, Wei Guo, Hugo Augustinus Joseph Cramer, Paul Christiaan Hinnen, Christian Marinus Leewis, Henk-Jan H. Smilde, Baukje Wisse
Publikováno v:
SPIE Proceedings.
The continuing trend of shrinking dimension and the related specifications requires tightening of control loops. To support the tighter control loops, the metrology sampling plans will require increasing sampling density and frequency. This study sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::543633219245caa6e295387c0d4b60ad
https://doi.org/10.1117/12.2085957
https://doi.org/10.1117/12.2085957
Autor:
Henk-Jan H. Smilde, J. Ducote, Florent Dettoni, Yoann Blancquaert, Lars H. D. Driessen, Jerome Depre, Willy van Buel, Christophe Dezauzier, Jan Beltman, Richard Johannes Franciscus Van Haren
Publikováno v:
SPIE Proceedings.
Scatterometry mark design for improvement of the metrology performance is investigated in this joint work by ASML and STMicroelectronics. The studied marks are small, enabling metrology within the device area. The new mark-design approach reduces the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07964e37cae02b425339175b8742ba1a
https://doi.org/10.1117/12.2085642
https://doi.org/10.1117/12.2085642
Autor:
Kai-Hsiung Chen, Kaustuve Bhattacharyya, Arie Jeffrey Den Boef, Maurits van der Schaar, Henk-Jan H. Smilde, Stephen P. Morgan, Andreas Fuchs, Martin Jacobus Johan Jak, Murat Bozkurt, Mark van Schijndel, Steffen Meyer, Chih-Ming Ke, Guo-Tsai Huang
Publikováno v:
SPIE Proceedings.
The target size reduction for overlay metrology is driven by the optimization of the device area. Furthermore, for the future semiconductor nodes accurate metrology on the order of 0.2 nm is necessary locally in the device area, requiring small in-di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41f73e7fbbda5ecbd0b50d8a555bbeae
https://doi.org/10.1117/12.2020930
https://doi.org/10.1117/12.2020930
Autor:
Kai-Hsiung Chen, Kaustuve Bhattacharyya, Henk-Jan H. Smilde, Chih-Ming Ke, Andreas Fuchs, Arie Jeffrey Den Boef, Guo-Tsai Huang, Steffen Meyer
Publikováno v:
ASMC 2013 SEMI Advanced Semiconductor Manufacturing Conference.
The high-end semiconductor lithography requirements for overlay and focus control in near-future ITRS nodes are at subnanometer level. This development is extremely challenging for the metrology precision and accuracy, as scaling down to the sub-angs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c96694d70f41f23faf79014d802f508f
https://doi.org/10.1109/asmc.2013.6552760
https://doi.org/10.1109/asmc.2013.6552760
Autor:
Jon Wu, Christophe Fouquet, Guo-Tsai Huang, T. S. Gau, Henk-Jan H. Smilde, Stephen P. Morgan, Maurits van der Schaar, Y. C. Ku, Cathy Wang, Miranda Un, Murat Bozkurt, Andreas Fuchs, Kai-Hsiung Chen, Steffen Meyer, Vincent Tsai, Kaustuve Bhattacharyya, Martin Jacobus Johan Jak, Peter Ten Berge, Michael Kubis, L. G. Terng, Mark van Schijndel, David Hwang, Chih-Ming Ke, Arie Jeffrey Den Boef, Frida Liang, Kevin Cheng
Publikováno v:
SPIE Proceedings.
Aggressive on-product overlay requirements in advanced nodes are setting a superior challenge for the semiconductor industry. This forces the industry to look beyond the traditional way-of-working and invest in several new technologies. Integrated me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e0a8bd347e041751b5b3f6cdef44fa7
https://doi.org/10.1117/12.2011878
https://doi.org/10.1117/12.2011878
Autor:
J. Matthijn Dekkers, Dave H. A. Blank, Horst Rogalla, Guus Rijnders, Henk Jan H. Smilde, Hans Hilgenkamp, Sybolt Harkema
Publikováno v:
Applied physics letters, 83(25), 5199-5201. American Institute of Physics
The correlation between the vicinal properties of SrTiO3 (001) substrates and the twinning in YBa2Cu3O7–x thin films grown by pulsed-laser deposition is studied using x-ray diffraction with reciprocal space mapping. The vicinal properties, i.e., an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aaef2ea76d2354f3e11688958696fc3d
https://doi.org/10.1063/1.1633010
https://doi.org/10.1063/1.1633010
Autor:
Guo-Tsai Huang, Arie Jeffrey Den Boef, Chih-Ming Ke, Jon Wu, Michael Kubis, Kai-Hsiung Chen, Martin Jacobus Johan Jak, Stephen P. Morgan, Cathy Wang, Kaustuve Bhattacharyya, Jacky Huang, Mark van Schijndel, Henk-Jan H. Smilde, Maurits van der Schaar, Steffen Meyer, Vincent Tsai, Andreas Fuchs
Publikováno v:
SPIE Proceedings.
Reducing the size of metrology targets is essential for in-die overlay metrology in advanced semiconductor manufacturing. In this paper, μ-diffraction-based overlay (μDBO) measurements with a YieldStar metrology tool are presented for target-sizes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb37aa564721e2bb51eb535b0c432881
https://doi.org/10.1117/12.916382
https://doi.org/10.1117/12.916382
Autor:
Reinhold Kleiner, Christian Gürlich, Hans Hilgenkamp, Dietmar Doenitz, Ariando, Rainer Straub, Dieter Koelle, Edward Goldobin, Henk Jan H. Smilde
Publikováno v:
Physical review letters, 103(6). American Physical Society
Low-temperature scanning electron microscopy (LTSEM) has been used to image the supercurrent distribution in ramp-type Josephson junctions between Nb and either the electron-doped cuprate Nd$_{2-x}$Ce$_x$CuO$_{4-y}$ or the hole-doped cuprate YBa$_2$C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4dcb66131dd10f14dcd7bccb7c1a3d99
https://research.utwente.nl/en/publications/d0620d93-328f-4c79-95a0-e9d49851ead9
https://research.utwente.nl/en/publications/d0620d93-328f-4c79-95a0-e9d49851ead9
Autor:
D. H. A. Blank, Ariando, Alexandre Avraamovitch Golubov, Sybolt Harkema, Hans Hilgenkamp, Henk Jan H. Smilde, J. M. Dekkers, Guus Rijnders, Horst Rogalla
Publikováno v:
Physical Review Letters. 95
The large anisotropies observed in the in-plane transport properties of untwinned single crystals of YBa2Cu3O6.95 reside in the orthorhombic nature of its band structure which includes CuO chains as well as CuO2 planes. An infinite band model with di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1109db2014cde6c1d1b1edcb636ef9ee
https://doi.org/10.1103/physrevlett.95.257001
https://doi.org/10.1103/physrevlett.95.257001
Autor:
Hilgenkamp, Hans, Ariando, Smilde, Henk-Jan H., Blank, Dave H. A., Rijnders, Guus, Rogalla, Horst, Kirtley, John R., Tsuei, Chang C.
Publikováno v:
Nature. 3/6/2003, Vol. 422 Issue 6927, p50. 4p.