Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Henk Niesing"'
Autor:
Masazumi Matsunobu, Henk Niesing, Chenxi Lin, Jeff Johnson, Alexander Ypma, Cyrus E. Tabery, Venky Subramony, Yi Zou, Linmiao Zhang, William Susanto, Dag Sonntag, Ravin Somasundaram, Bastani Vahid, Hakki Ergun Cekli, Zakir Ullah, Jelle Nije
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXII.
In addition to lithography process and equipment induced variations, processes like etching, annealing, film deposition and planarization exhibit variations, each having their own intrinsic characteristics and leaving an effect, a ‘fingerprint’,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::408cee4e7a6f3141074b7ffdefb3fe2a
https://doi.org/10.1117/12.2297304
https://doi.org/10.1117/12.2297304
Autor:
Wangshi Zhou, Henk Niesing, Dan Ulmer, Sean Park, Sarah Wu, Maurits van der Schaar, Ewoud van West, Craig Hickman, Paul Tuffy, Youping Zhang, Jianming Zhou, Cedric Affentauschegg
Publikováno v:
SPIE Proceedings.
Designing metrology targets that mimic process device cell behavior is becoming a common component in overlay process control. For an advanced DRAM process (sub 20 nm node), the extreme illumination methods needed to pattern the critical device featu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e233104693789d380a6b255c9c76550
https://doi.org/10.1117/12.2219439
https://doi.org/10.1117/12.2219439
Autor:
Remco Dirks, Ethan Chiu, Henk Niesing, Baukje Wisse, Stefan Geerte Kruijswijk, Reinder Teun Plug, Bijoy Rajasekharan, Mariya Ponomarenko, Sylvia Yuan, Marlene Strobl, Platt Hung, Noelle Wright, Wilhelm Tsai, Vincent Couraudon, David Huang, Thomas M. Chen, Henry Chen, Paul K. L. Yu, Yi Song, Frida Liang, Andy Lan, Alan Wang, Wilson Hsu, Hugo Augustinus Joseph Cramer
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXVIII.
Integrated metrology in the lithography cluster is a promising solution to tighten process control. It is shown that optical CD metrology using YieldStar, an angular resolved scatterometer, meets all requirements in terms of precision, process robust
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8494e48a6e6ed8de43718353dbe049e0
https://doi.org/10.1117/12.2047205
https://doi.org/10.1117/12.2047205
Autor:
Shaunee Cheng, Philippe Leray, Christine Corinne Mattheus, Hugo Augustinus Joseph Cramer, Henk Niesing, Anne-Laure Charley, Baukje Wisse, Wouter Pypen, Alok Verma, Stefan Geerte Kruijswijk
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXVIII.
Monitoring and control of the various processes in the semiconductor require precise metrology of relevant features. Optical Critical Dimension metrology (OCD) is a non-destructive solution, offering the capability to measure profiles of 2D and 3D fe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8c771e1f1cbda5897e0dcb84c700f73
https://doi.org/10.1117/12.2047280
https://doi.org/10.1117/12.2047280