Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Hengyu Yu"'
Publikováno v:
IET Intelligent Transport Systems, Vol 17, Iss 9, Pp 1752-1768 (2023)
Abstract High‐dependability Internet of Vehicle (IoV) is essential for urban transit, since it contributes to the safe operation of vehicles, and even to the safety of the entire city. This paper introduces the IoV cluster model with network slicin
Externí odkaz:
https://doaj.org/article/fb6a3944a79d4e36bab2870c0e924152
Autor:
Jiashu Qian, Limeng Shi, Michael Jin, Monikuntala Bhattacharya, Atsushi Shimbori, Hengyu Yu, Shiva Houshmand, Marvin H. White, Anant K. Agarwal
Publikováno v:
Materials, Vol 17, Iss 7, p 1455 (2024)
The failure mechanism of thermal gate oxide in silicon carbide (SiC) power metal oxide semiconductor field effect transistors (MOSFETs), whether it is field-driven breakdown or charge-driven breakdown, has always been a controversial topic. Previous
Externí odkaz:
https://doaj.org/article/bcb659463d6f43b7af0bb37f4331bbb1
Autor:
Jiashu Qian, Limeng Shi, Michael Jin, Monikuntala Bhattacharya, Atsushi Shimbori, Hengyu Yu, Shiva Houshmand, Marvin H. White, Anant K. Agarwal
Publikováno v:
Micromachines, Vol 15, Iss 2, p 177 (2024)
The body diode degradation in SiC power MOSFETs has been demonstrated to be caused by basal plane dislocation (BPD)-induced stacking faults (SFs) in the drift region. To enhance the reliability of the body diode, many process and structural improveme
Externí odkaz:
https://doaj.org/article/a977b346e73443f18f76071e80b00b6f
Publikováno v:
IET Power Electronics, Vol 15, Iss 14, Pp 1502-1510 (2022)
Abstract Planar split‐gate MOSFETs (SG‐MOSFETs) are promising in high‐frequency power applications due to the fast turn on/off speeds and low switching loss. However, SG‐MOSFETs suffer from crowded electric field at the edge of the split poly
Externí odkaz:
https://doaj.org/article/906648a40cdb4ef1a1711234e9349e64
Publikováno v:
International Journal of Distributed Sensor Networks, Vol 18 (2022)
The Internet of Things has emerged as a wonder-solution to numerous problems in our everyday lives, such as smart homes and intelligent transportation. As an extension of the IoTs, the Internet of Vehicles (IoVs) also requires increasingly high secur
Externí odkaz:
https://doaj.org/article/2bbaf0190a5241a09f98f97b484daadc
Autor:
Shiwei Liang, Yu Yang, Lei Shu, Ziyuan Wu, Bingru Chen, Hengyu Yu, Hangzhi Liu, Liang Wang, Tongde Li, Gaoqiang Deng, Jun Wang
Publikováno v:
IEEE Transactions on Electron Devices. 70:1176-1180
Publikováno v:
IEEE Transactions on Electron Devices. 69:6241-6248
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 10:5070-5080
Publikováno v:
IEEE Transactions on Electron Devices. 69:5104-5109
Publikováno v:
IEEE Transactions on Electron Devices. 69:4757-4760