Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Hengwei Cui"'
Autor:
Hongbo Jiang, Hengwei Cui, Luyun Deng, Dafu Cao, Wenjie Ge, Kongyang Chen, Jianchen Zhao, Jian Sun
Publikováno v:
Results in Engineering, Vol 16, Iss , Pp 100715- (2022)
Distributed parameter model (also referred to as continuum model) is commonly used to analyze the behavior of conventional frame-shear wall structure. In recent decades, extensive research has been published and proved the well-controlled seismic per
Externí odkaz:
https://doaj.org/article/8363f68f36c744edae172c65ad1372ba
Autor:
Hongbo Jiang, Jian Sun, Hongxing Qiu, Dafu Cao, Wenjie Ge, Qiang Fang, Hengwei Cui, Kongyang Chen
Publikováno v:
Buildings, Vol 12, Iss 12, p 2069 (2022)
Precast Concrete (PC) shear walls are becoming popular in building structures. With “wet” connection techniques, PC shear walls often behave like conventional cast-in-place walls, where hardening occurs after yielding. In this study, two PC shear
Externí odkaz:
https://doaj.org/article/06e6deee4fb54995b14ff8ecfaaed9a0
Autor:
Jinbiao Liu, Jing Xu, Hengwei Cui, Xianglie Sun, Shujuan Mao, Yuanhao Miao, Jiahan Yu, Jianghao Han, ZhenZhen Kong, Tao Yang, Junfeng Li, Jun Luo
Publikováno v:
ECS Journal of Solid State Science and Technology. 12:054002
By employing a 355-nm nanosecond (ns) ultraviolet (UV) laser annealing, the impact of fluorine (F) co-doping on the formation of a highly activated N-type shallow junction in germanium (Ge) is investigated. Secondary ion mass spectrometry (SIMS) dept
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1724975181b88ca7b35c68228e15430
https://doi.org/10.1149/2162-8777/acd721
https://doi.org/10.1149/2162-8777/acd721
Autor:
Shujuan Mao, Jinbiao Liu, Yao Wang, Weibin Liu, Jiaxin Yao, Yanpeng Hu, Hengwei Cui, Zhenzhen Kong, Ran Zhang, Haochen Liu, Zhenxing Wang, Tingting Li, Na Zhou, Yongkui Zhang, Jianfeng Gao, Zhenhua Wu, Yongliang Li, Junfeng Li, Jun Luo, Wenwu Wang, Huaxiang Yin
Publikováno v:
ECS Journal of Solid State Science and Technology. 11:054002
In this work, a comparative study of Ga, Ge+B, and Ga+B ion-implantation (I/I) is reported to improve the specific contact resistivity (ρ c) on p-type Ge. It is found that Ga I/I shows superiority for shallow source/drain (S/D) junctions doping over
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7afad56b48e49fa70cfa269ec9421390
https://doi.org/10.1149/2162-8777/ac697a
https://doi.org/10.1149/2162-8777/ac697a