Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Heng-Yu Xu"'
Publikováno v:
Materials Science Forum. 1014:102-108
In this paper, SiC MOS capacitors were fabricated and annealed in Ar/O2 = 9:1 ambient with different temperature, and the annealing effects on the reliability and performance of SiC MOS capacitance were investigated. We found that annealing in Ar/O2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abda17c99f76e31c208db9b85d0a5dd4
https://doi.org/10.4028/www.scientific.net/msf.1014.102
https://doi.org/10.4028/www.scientific.net/msf.1014.102
Publikováno v:
Materials Science Forum. 954:109-113
In this work, we investigated the oxide reliability of 4H-SiC (0001) MOS capacitors, the oxide was fabricated about 60 nm by thermal oxidation temperature at 1350°C, the oxides than annealed at different temperatures and times in diluted NO (10% in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::878f96d117d1adb2c203da471feeec1c
https://doi.org/10.4028/www.scientific.net/msf.954.109
https://doi.org/10.4028/www.scientific.net/msf.954.109
Publikováno v:
Materials Science Forum. 954:121-125
Back-grinding process was applied to the 4H-SiC (0001) epitaxial wafers. We found that the parameters about stress increased after back-grinding process. In our work, the characterization of stress on interface state density (Dit) of SiC/SiO2 was inv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1f424c573f5ca9f03b8700af5b12464
https://doi.org/10.4028/www.scientific.net/msf.954.121
https://doi.org/10.4028/www.scientific.net/msf.954.121
Publikováno v:
Materials Science Forum. 954:99-103
We reported that high oxidation temperature is attributed to break Si-C bond and release nitrogen gas to nitrogen ions over 1350°C. The capacitance-voltage characteristics of SiO2/4H-SiC (0001) MOS capacitors fabricated under different thermal oxida
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85a38cc335cb1cb31fa57d029ac94712
https://doi.org/10.4028/www.scientific.net/msf.954.99
https://doi.org/10.4028/www.scientific.net/msf.954.99
Selected peer-reviewed extended articles based on abstracts presented at the 3rd Asia-Pacific Conference on Silicon Carbide and Related Materials 2022 (APCSCRM 2022)Aggregated Book
Publikováno v:
Analytical Methods. 10:2347-2352
We report a dual-quenching strategy for highly sensitive detection of adenosine triphosphate (ATP) using electrochemiluminescence (ECL) recovery based on the exonuclease-assisted reduction in amounts of both ferrocene and ECL-RET acceptor (Au nanorod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79fadef643d1e3e9dee2421f8d03b4d4
https://doi.org/10.1039/c8ay00465j
https://doi.org/10.1039/c8ay00465j
Publikováno v:
Plasmonics. 12:971-976
In this article, an anisotropic magnetized ferrite photonic crystal model is analyzed by using the finite-difference time-domain method. The electromagnetic wave propagates in anisotropic ferrite material and forms two kinds of Eigen propagation mode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16e6c0c40782f10a3ebb0e7c6f2b1a37
https://doi.org/10.1007/s11468-016-0348-5
https://doi.org/10.1007/s11468-016-0348-5
Publikováno v:
Plasmonics. 12:921-927
Take Runge-Kutta exponential time differencing finite-difference time-domain (RKETD-FDTD) method, simulate numerically, analyze the transmission properties of terahertz (THz) wave in the non-magnetized plasma medium, and conclude the regulations of T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07667b91f5bdcc2772752893076404e9
https://doi.org/10.1007/s11468-016-0344-9
https://doi.org/10.1007/s11468-016-0344-9
Publikováno v:
Analytical chemistry. 90(5)
A selective excitation of [Ir(df-ppy)2(pic)] and [Ru(bpy)3]2+ through tuning the electrode potential is reported in this work. Bidirectional color change from blue-green to red could be observed along with increase and decrease of the potential, whic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2daff8419c4fcd2d2f8e328843bddfa8
https://pubmed.ncbi.nlm.nih.gov/29417820
https://pubmed.ncbi.nlm.nih.gov/29417820
Publikováno v:
Materials Science Forum. :484-487
A high-temperature process is used to enhance the COxdesorption rate to reduce trap density in SiC/SiO2interface for SiC MOSFETs. Interface state density as measured by Terman method and C-ψs method for the oxidation processes at a high temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f61eb15bf5bd56c2db2a4210f7a455f0
https://doi.org/10.4028/www.scientific.net/msf.821-823.484
https://doi.org/10.4028/www.scientific.net/msf.821-823.484