Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Heng-Tien Lin"'
Autor:
Heng-Tien Lin, 林恆田
97
In recent year, organic materials have attracted much attention due to their potential advantages of flexibility, simple process and low cost. Organic memory is an essential device for any electronic logic system to provide or store informati
In recent year, organic materials have attracted much attention due to their potential advantages of flexibility, simple process and low cost. Organic memory is an essential device for any electronic logic system to provide or store informati
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/79888147158385462242
Autor:
Heng-Tien Lin, Yue-Min Wan
Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-9 (2019)
Scientific Reports
Scientific Reports
Study on single electron tunnel using current-voltage characteristics in nanopillar transistors at 298 K show that the mapping between the Nth electron excited in the central box ∼8.5 × 8.5 × 3 nm3 and the Nth tunnel peak is not in the one-to-one
Publikováno v:
Journal of Electronic Materials. 45:6123-6129
With the development of intelligent electronic products, usage of fine-pitch interconnects has become mainstream in high performance electronic devices. Electrochemical migration (ECM) of interconnects would be a serious reliability problem under tem
Autor:
Li-Chi Chang, Yu-Rung Peng, Chung-Chih Wu, Chang-Yu Lin, Chih-Hung Tsai, Yung-Hui Yeh, Heng-Tien Lin, Zingway Pei
Publikováno v:
Organic Electronics. 12:1777-1782
In this work, we successfully implemented flexible high-frequency rectifying diodes on polycarbonate substrates using the polythiophene-based semiconducting polymers. We show that the appropriate conductivity of the intermediate hole-injection layer
Autor:
Jun-Rong Chen, Chung-Chih Wu, Zingway Pei, Heng-Tien Lin, Yung-Hui Yeh, Yi-Jen Chan, Chang-Yu Lin
Publikováno v:
Organic Electronics. 12:1632-1637
The so-called optical beam induced resistance change (OBIRCH) method, a non-destructive characterization method, was adopted to investigate the spatial distribution of current transport paths in Au nanoparticle nonvolatile bistable memory devices. In
Autor:
Sean M. Garner, Kuan Ting Kuo, Guo-Shing Huang, Heng-Tien Lin, Chet Chang, Je-Ping Hu, John Earl Tosch, Jen-Chieh Lin, C.T. Liu, Gary Edward Merz, Su-Tsai Lu, Chia-Sheng Huang
Publikováno v:
SID Symposium Digest of Technical Papers. 44:807-809
The innovation of ITRI's roll-to-roll (R2R) technology is capable of handling 100 μm ultra-thin flexible glass (UTFG) with in-house designed equipment. By applying this R2R technology on roll-UTFG, the total thickness of touch panel module with 0.4
Autor:
Hao-Chi Ku, Benjamin Chih-Ming Lai, Yung-lung Tseng, Ming-Jiue Yu, Heng-Tien Lin, Chang-Yu Lin, Yung-Hui Yeh, Chun-Cheng Cheng, Chyi-Ming Leu
Publikováno v:
SID Symposium Digest of Technical Papers. 43:345-347
A flexible hybrid substrate was demonstrated for Roll-to-Roll (R2R) manufacturing. Layer-by-layer misalignment can be well controlled within 5μm. Amorphous InGaZnO (a-IGZO) TFT was fabricated on the flexible hybrid substrate by R2R process for the f
Publikováno v:
IEEE Electron Device Letters. 30:18-20
In this letter, we demonstrate a robust and stacked diode-switch organic nonvolatile bistable memory (DS-ONBM) using polymer-chain-stabilized gold nanoparticles on a plastic substrate in ambient air. The absorption spectrum of the gold nanoparticles
Publikováno v:
IEEE Electron Device Letters. 28:951-953
In this letter, we demonstrate a new organic bistable nonvolatile memory device that is adopting polymer-chain-stabilized gold (Au) nanoparticles in a host polymer as a memory active layer. In this letter, the Au nanoparticles are well dispersed in t
Publikováno v:
IEEE Electron Device Letters. 28:569-571
In this letter, the conduction mechanism in nanoparticle-contained polymer memory was investigated experimentally and theoretically. The current-voltage characteristics showed that the device switches from an initial low-conductivity state to a high-