Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Heng-Jen Lee"'
Autor:
James Cheng, C. H. Twu, Jackie Cheng, Chih Hsuan Chao, Xin Ren Yu, Junjin Lin, Sweet Chen, Adder Lee, William Chou, Jeffrey Cheng, Heng Jen Lee, Edgar Huang, Young Ham, Po Tsang Chen, Colbert Lu, Josh Tzeng
Publikováno v:
Photomask Technology 2019.
In this paper we perform a foundational study on the impact of quartz etched depth, and optical density (OD) of mask opaque area, the 3D effect in ArF immersion lithography at advanced process node. The after development inspection (ADI) critical dim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f2af7b79f6e41c38ad9888d9c2d2014
https://doi.org/10.1117/12.2537938
https://doi.org/10.1117/12.2537938
Publikováno v:
Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology.
As technical advances continue, the pattern size of semiconductor circuit has been shrunk. Defect control becomes tighter due to decrease in defect size that affects the image printed on the wafer. It is critical to the photomask which contained cons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fe50d7fe7f0b85be57585e671866d05
https://doi.org/10.1117/12.2530983
https://doi.org/10.1117/12.2530983
Publikováno v:
2019 China Semiconductor Technology International Conference (CSTIC).
Photomasks constitute a critical part of the electronic circuit device manufacturing processes. A photomask morphs into design patterns of devices through a lithographic process. Any defects on a photomask will cause repeating defects in circuits lea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f22155db07a615a98695d0c982c60b9
https://doi.org/10.1109/cstic.2019.8755677
https://doi.org/10.1109/cstic.2019.8755677
Publikováno v:
Proceedings of SPIE; 8/29/2019, Vol. 11178, p1-6, 6p
Autor:
Kazuhiro Ueda, Yu-Hsi Wang, Hiroki Kawada, Nelson Ren, Chin-Hsiang Lin, Burn Jeng Lin, Chih-Ming Ke, Tsai-Sheng Gau, Chi-Chuang Lee, Hiroaki Nomura, Takashi Iizumi, Heng-Jen Lee
Publikováno v:
SPIE Proceedings.
ArF-resist-shrinkage and line-edge roughness-induced CD errors are the two main challenges for CD SEM. The requirement of measurement precision for the 65-nm node is less than 0.5 nm. The current CD SEM ADI precision is between 0.7 to 0.9 nm after sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f290f9c9d3f1545a76d974d676c7747f
https://doi.org/10.1117/12.601133
https://doi.org/10.1117/12.601133