Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Heng-Chih Lin"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:790-796
For the first time, metal–oxide–semiconductor interface atomic force microscope images were used to directly calculate the Fowler-Nordheim tunneling behavior for thin gate oxides with different interface roughness. Assuming that the roughness is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dadf82358a633e6e9a0c5e7f536c1aa5
https://doi.org/10.1116/1.580709
https://doi.org/10.1116/1.580709
Publikováno v:
Solid-State Electronics. 35:1709-1712
A common-gate complementary metal-oxide-semiconductor (CMOS) inverter consisting of an n -channel amorphous silicon (a-Si:H) thin-film transistor on top of 1.2 μm high Al gate of the crystalline silicon p -channel metal-oxide-semiconductor (PMOS) tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8e99d788b5d2e455c2386941cf7a12b
https://doi.org/10.1016/0038-1101(92)90250-g
https://doi.org/10.1016/0038-1101(92)90250-g
Publikováno v:
IEEE Electron Device Letters. 17:178-180
The correlation between inversion layer mobility of MOSFET's and surface micro-roughness of the channel has been studied using split CV measurements and AFM analysis. The mobility at high normal field decreases with increasing the surface roughness o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edf8d79450794d59bf103c391448cc80
https://doi.org/10.1109/55.485166
https://doi.org/10.1109/55.485166
Autor:
Ah-Lyan Yee, A. Tsong, V. Pathak, Martin J. Izzard, E. Suder, J.M. Tran, R. Prentice, R. Venett, S. Spencer, R. Gu, Heng-Chih-Lin
Publikováno v:
1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326).
This paper describes a high speed, low jitter CMOS transceiver, which includes 10 to 1 full duplex serialize-deserialize function, clock recovery, high speed differential I/O, and Built In Self Test (BIST). It was fabricated and tested to work at wid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85947ad9fa86945340e03474262ce97d
https://doi.org/10.1109/vlsic.1999.797230
https://doi.org/10.1109/vlsic.1999.797230
Publikováno v:
1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition (Cat. No.99CH36278).
Fiber Channel networks, gigabit Ethernet backbones, and IEEE 1394.b Firewire links require a high-speed point-to-point connection. This CMOS serial link transceiver dissipates 250 mW and has low jitter (8ps RMS, 44 ps P-P at 3.5 Gb/s), and wide frequ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da73e2f11b1de1bb2315bb46eb5a9f5d
https://doi.org/10.1109/isscc.1999.759289
https://doi.org/10.1109/isscc.1999.759289
Publikováno v:
Symposium on VLSI Technology.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d224958451a6a3d21fc6346ab1d6a3c
https://doi.org/10.1109/vlsit.1997.623686
https://doi.org/10.1109/vlsit.1997.623686
Publikováno v:
MRS Proceedings. 473
For future CMOS GSI technology, Si/SiO2 interface micro-roughness becomes a non-negligible problem. Interface roughness causes fluctuations of the surface normal electric field, which, in turn, change the gate oxide Fowler-Nordheim tunneling behavior
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6eb13bef317b5ada25fef1b03a316563
https://doi.org/10.1557/proc-473-175
https://doi.org/10.1557/proc-473-175
Publikováno v:
MRS Proceedings. 386
Next generation ULSI devices will require ultra thin gate insulators where degradation due to contamination or surface microroughness is an even more important problem. Tunneling and breakdown characteristics are critical electrical testing methods,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e81703899923025f9b600b217964adbb
https://doi.org/10.1557/proc-386-237
https://doi.org/10.1557/proc-386-237
Publikováno v:
MRS Proceedings. 386
Microroughness is a critical parameter in ULSI device interface reliability and has been shown to effect several critical MOS electrical properties. The atomic force microscope (AFM) has become the instrument of choice for silicon surface microroughn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36cec763addbd824c27935da8bb23ea6
https://doi.org/10.1557/proc-386-383
https://doi.org/10.1557/proc-386-383
Autor:
Heng-Chih Lin, Wen-Hwa Chen
Publikováno v:
AIAA Journal. 23:795-801
An assumed hybrid-displacement finite element model is presented to deal with the flutter problems of thin cracked panels. Based on a modified Hamilton's principle for nonconservative systems with relaxed continuity requirements for deflections and n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7ecbf93530435061512cb57579fc078
https://doi.org/10.2514/3.8986
https://doi.org/10.2514/3.8986