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pro vyhledávání: '"Heng Tein Lin"'
Publikováno v:
Applied Physics Letters. 87:123506
A nanoelectronic device consisting of a SiNx∕Si∕SiNx nanopillar and a side electrical gate has been assembled to display single-electron resonance tunneling and Coulomb modulation at 300K. The device features an ultrasmall quantum dot of size ∼
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8104c82094acfbc0894e7f2bd0cec608
https://doi.org/10.1063/1.2056577
https://doi.org/10.1063/1.2056577
