Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Heng−Sheng Haung"'
Autor:
Shuang-Yuan Chen, Chia-Hao Tu, Jung-Chun Lin, Mu-Chun Wang, Po-Wei Kao, Memg-Hong Lin, Ssu-Han Wu, Ze-Wei Jhou, Sam Chou, Joe Ko, Heng-Sheng Haung
Publikováno v:
Japanese Journal of Applied Physics. 47:1527-1531
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4578959bbf09a32fe0207b94b98baf3c
https://doi.org/10.1143/jjap.47.1527
https://doi.org/10.1143/jjap.47.1527
Autor:
Joe Ko, Jung−Chun Lin, Heng−Sheng Haung, Ze−Wei Jhou, Hung-Wen Chen, Sam Chou, Hung−Chuan Lin, Shuang-Yuan Chen, Tien−Fu Lei
Publikováno v:
Japanese Journal of Applied Physics. 45:3266-3271
In this paper, the impact of hot carrier stress on the mismatch properties of n and p metal–oxide–semiconductor (MOS) field-effect transistors (FETs) with different sizes produced using 0.15 µm complementary MOS (CMOS) technology is presented fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c52255ea2825239a2b1c3e68c5bb99ef
https://doi.org/10.1143/jjap.45.3266
https://doi.org/10.1143/jjap.45.3266
Autor:
Tien−Fu Lei, Joe Ko, Hung-Wen Chen, Jung−Chun Lin, Hung−Chuan Lin, Heng−Sheng Haung, Sam Chou, Ze−Wei Jhou, Shuang-Yuan Chen
Publikováno v:
Japanese Journal of Applied Physics. 45:3144-3146
In this study, n-channel metal–oxide–semiconductor field-effect transistors (nMOSFETs) having 20 and 32 A gate oxide thicknesses of 0.13 µm technology were used to investigate DC hot-carrier reliability at elevated temperatures up to 125 °C. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d4b7e17eb517db7ed61f8b03faff49f
https://doi.org/10.1143/jjap.45.3144
https://doi.org/10.1143/jjap.45.3144
Autor:
Shuang-Yuan Chen, Chia-Hao Tu, Jung-Chun Lin, Po-Wei Kao, Wen-Cheng Lin, Ze-Wei Jhou, Sam Chou, Joe Ko, Heng-Sheng Haung
Publikováno v:
2006 IEEE International Integrated Reliability Workshop Final Report; 2006, p163-166, 4p