Zobrazeno 1 - 10
of 15 191
pro vyhledávání: '"Hemt"'
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 11, Pp n/a-n/a (2024)
Abstract The heat dissipation optimization process is a crucial element in high power high electron mobility transistor (HEMT) components fabricated using the Gallium Nitride grown on silicon (Si) substrate. In this study, the Si substrate is thinned
Externí odkaz:
https://doaj.org/article/b0d353cd26684ead9926d63917b2dc51
Autor:
Seungmin Woo, Woojin Choi, Jaekyung Shin, Yifei Chen, Youngchan Choi, Sooncheol Bae, Hyungjin Jeon, Youngyun Woo, Youngoo Yang
Publikováno v:
Journal of Electromagnetic Engineering and Science, Vol 24, Iss 4, Pp 401-410 (2024)
Owing to the high impedance transformation ratio, the Doherty power amplifier (DPA) with a large output power back-off generally has bandwidth limitations. This study proposes an asymmetric DPA with an impedance distribution and control circuit (IDCC
Externí odkaz:
https://doaj.org/article/9739af8a21d940bf863c4828fd1db83d
Autor:
Kuzmík, J. a, ⁎, Blaho, M. a, Gregušová, D. a, Eliáš, P. a, Pohorelec, O. a, Hasenöhrl, S. a, Haščík, Š. a, Gucmann, F. a, Zápražný, Z. a, Dobročka, E. a, Kyambaki, M. b, Konstantinidis, G. b
Publikováno v:
In Materials Science in Semiconductor Processing January 2025 185
Autor:
Razeen, Ahmed S. a, b, ∗, Tang, Eric X. b, Yuan, Gao c, Ong, Jesper c, Radhakrishnan, K. a, Tripathy, Sudhiranjan b, ∗∗
Publikováno v:
In Optical Materials April 2024 150
Autor:
Wei-Cheng Wang, Ming-Dou Ker
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 760-769 (2024)
When more circuit functions are integrated into a single chip fabricated by the GaN-on-Silicon process, the need for on-chip electrostatic discharge (ESD) protection design becomes crucial to safeguard GaN integrated circuits (ICs). In this work, the
Externí odkaz:
https://doaj.org/article/c812b251c91d44b28f446af7b8bb188f
Publikováno v:
In International Journal of Heat and Mass Transfer April 2025 239
Autor:
Taya, Payal a, 1, Khan, Salahuddin a, b, Jayabalan, J. a, 2, Singh, Asha a, Singh, Vikash K. c, Dixit, Vijay K. a, b, Sharma, Tarun K. a, b, ∗
Publikováno v:
In Journal of Luminescence March 2025 278
Autor:
Liu, Bo a, b, 1, Su, Yong-Bo c, 1, Liu, Ren-Jie a, Jin, Zhi c, Zhang, Chao a, ⁎, Zhong, Ying-Hui a, ⁎
Publikováno v:
In Solid State Electronics February 2025 224
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-8 (2024)
Abstract This study demonstrates a novel use of the U-Net convolutional neural network (CNN) for modeling pixel-based electrostatic potential distributions in GaN metal–insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) with var
Externí odkaz:
https://doaj.org/article/d57d1e5a071d44e0877f3e71703ba9b8
Autor:
Seong-Hee Han, Dong-Wook Kim
Publikováno v:
Journal of Electromagnetic Engineering and Science, Vol 24, Iss 2, Pp 170-177 (2024)
This paper employs the 0.2 μm ETRI GaN HEMT process on SiC to develop a Ku-band GaN low-noise amplifier monolithic microwave integrated circuit (MMIC) characterized by high-input power robustness for radar transceiver modules. A source degeneration
Externí odkaz:
https://doaj.org/article/f9e7b51092e74f4d8f3a6074c984bff1