Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Hema Lata Rao Maddi"'
Autor:
Shengnan Zhu, Tianshi Liu, Junchong Fan, Hema Lata Rao Maddi, Marvin H. White, Anant K. Agarwal
Publikováno v:
Materials, Vol 15, Iss 17, p 5995 (2022)
650 V SiC planar MOSFETs with various JFET widths, JFET doping concentrations, and gate oxide thicknesses were fabricated by a commercial SiC foundry on two six-inch SiC epitaxial wafers. An orthogonal P+ layout was used for the 650 V SiC MOSFETs to
Externí odkaz:
https://doaj.org/article/93ea600f1c8e4687b84666205a2808f6
Autor:
Hema Lata Rao Maddi, Susanna Yu, Shengnan Zhu, Tianshi Liu, Limeng Shi, Minseok Kang, Diang Xing, Suvendu Nayak, Marvin H. White, Anant K. Agarwal
Publikováno v:
Energies, Vol 14, Iss 24, p 8283 (2021)
This article provides a detailed study of performance and reliability issues and trade-offs in silicon carbide (SiC) power MOSFETs. The reliability issues such as threshold voltage variation across devices from the same vendor, instability of thresho
Externí odkaz:
https://doaj.org/article/c2cedf7acf394cbab0e81e339e2b9d89
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df932392cdc9296fba6e9948a673d97f
https://doi.org/10.1109/edtm55494.2023.10103006
https://doi.org/10.1109/edtm55494.2023.10103006
Autor:
Shengnan Zhu, Limeng Shi, Michael Jin, Jiashu Qian, Monikuntala Bhattacharya, Hema Lata Rao Maddi, Marvin H. White, Anant K. Agarwal, Tianshi Liu, Atsushi Shimbori, Chingchi Chen
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::586a9927d2584b89f74456de755f7872
https://doi.org/10.1109/irps48203.2023.10117998
https://doi.org/10.1109/irps48203.2023.10117998
Effects of Oxide Electric Field Stress on the Gate Oxide Reliability of Commercial SiC Power MOSFETs
Autor:
Limeng Shi, Tianshi Liu, Shengnan Zhu, Jiashu Qian, Michael Jin, Hema Lata Rao Maddi, Marvin H. White, Anant K. Agarwal
Publikováno v:
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b0dd612d92183afb078c5afa2c7b1f3
https://doi.org/10.1109/wipda56483.2022.9955295
https://doi.org/10.1109/wipda56483.2022.9955295
Characterization of Near Conduction Band SiC/SiO2 Interface Traps in Commercial 4H-SiC Power MOSFETs
Publikováno v:
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47695dde24e719519f4ff913ba1d340e
https://doi.org/10.1109/wipda56483.2022.9955292
https://doi.org/10.1109/wipda56483.2022.9955292
Autor:
Shengnan Zhu, Tianshi Liu, Limeng Shi, Michael Jin, Hema Lata Rao Maddi, Marvin H. White, Anant K. Agarwal
Publikováno v:
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbd89dcc7278f72de8dc5833ecd908ff
https://doi.org/10.1109/wipda49284.2021.9645100
https://doi.org/10.1109/wipda49284.2021.9645100
Autor:
Suvendu Nayak, Susanna Yu, Hema Lata Rao Maddi, Michael Jin, Limeng Shi, Swaroop Ganguly, Anant K. Agarwal
Publikováno v:
Japanese Journal of Applied Physics. 61:061007
The short circuit (SC) capability is a crucial figure of merit for a power switching device in applications such as electrical vehicle traction inverters and chargers. SiC DMOSFETs are inferior to insulated gate bipolar transistors in terms of the SC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f0d3887f21e29ef766272d035154c03
https://doi.org/10.35848/1347-4065/ac6409
https://doi.org/10.35848/1347-4065/ac6409