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pro vyhledávání: '"Helmut Nauschnig"'
Autor:
Rick Phelps, Donald J. Cook, Helmut Nauschnig, Santosh Sharma, Georg Roerher, Alain Loiseau, Rainer Minixhofer, Theodore J. Letavic, Yun Shi, John-Ellis Monaghan, James S. Dunn, Natalie B. Feilchenfeld, Christopher Lamothe
Publikováno v:
2012 24th International Symposium on Power Semiconductor Devices and ICs.
This paper presents a 20V-rated planar dual gate oxide NLDMOS power device structure fabricated in a 180nm power management technology. The performance of the planar dual gate device structure is compared to a conventional STI-based device and it is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf0e20dcf055204e8d650f75d8097771
https://doi.org/10.1109/ispsd.2012.6229107
https://doi.org/10.1109/ispsd.2012.6229107
