Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Helmut Brech"'
Autor:
Helmut Brech, Matteo Meneghini, S. Lavanga, Gaudenzio Meneghesso, Isabella Rossetto, Enrico Zanoni, A. Barbato, Andrea Favaron, Haifeng Sun, Marco Silvestri
Publikováno v:
IEEE Transactions on Electron Devices. 64:1032-1037
This paper demonstrates that—for high-electric fields and drain current levels—the electroluminescence (EL) versus VGS curves of GaN-on-Si radio frequency HEMTs significantly deviate from the well-known bell-shape, due to the turn-on of a seconda
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::22f569b3d167290ce1b8909bd7403229
https://doi.org/10.1109/ted.2017.2654859
https://doi.org/10.1109/ted.2017.2654859
Publikováno v:
2019 14th European Microwave Integrated Circuits Conference (EuMIC).
The influence of eutectic die attach on RF-substrate losses of AlGaN/GaN HEMTs grown on high-resistivity silicon substrates has been studied. A severe degradation in load pull efficiency is observed after die attach. Analyzing this degradation for di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8b6a85e9c8f1fde7d12b13dd574bde6
https://doi.org/10.23919/eumic.2019.8909678
https://doi.org/10.23919/eumic.2019.8909678
Publikováno v:
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
The influence of an accurate electron velocity-field relationship modelling on pulsed IV and small-signal RF characteristics in GaN-on-Si HEMTs is discussed and compared to measurements. We show by technology computer-aided design (TCAD) simulation a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f97f8f4a090935b2e4e13a7ba0069d72
https://doi.org/10.1109/sispad.2019.8870417
https://doi.org/10.1109/sispad.2019.8870417
Publikováno v:
Semiconductor Science and Technology. 35:055014
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4716f94820ad2aa003d3c29cb76a8d0
https://doi.org/10.1088/1361-6641/ab78f5
https://doi.org/10.1088/1361-6641/ab78f5
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