AlGaN Nanowires Grown on SiO2/Si (100) Using Graphene as a Buffer Layer

Autor: Junxi Wang, Xiaoyan Yi, Helge Weman, Jinmin Li, Zhiqiang Liu, Yang Li, D L Dheeraj, Yunyu Wang, Meng Liang

Publikováno v: Crystal Growth & Design. 19:5516-5522

III-Nitride epitaxy is deeply dependent on the substrate and is difficult to grow on amorphous substrates because of the lattice mismatch limits. In this paper, graphene is employed as a buffer lay...

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c93287229349236a5fb54463684be4ec
https://doi.org/10.1021/acs.cgd.9b00093

GaN/AlGaN Nanocolumn Ultraviolet Light-Emitting Diode Using Double-Layer Graphene as Substrate and Transparent Electrode

Autor: Bjørn-Ove Fimland, Katsumi Kishino, Lyubomir Ahtapodov, Andreas Liudi Mulyo, Ida Marie Høiaas, Dong Chul Kim, Helge Weman, Per Erik Vullum

Publikováno v: Nano letters

The many outstanding properties of graphene have impressed and intrigued scientists for the last few decades. Its transparency to light of all wavelengths combined with a low sheet resistance makes it a promising electrode material for novel optoelec

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc09105d70774320e2072982b175e9c1
https://doi.org/10.1021/acs.nanolett.8b04607

The influence of AlN buffer layer on the growth of self-assembled GaN nanocolumns on graphene

Autor: Per Erik Vullum, Andreas Liudi Mulyo, Helge Weman, Bjørn-Ove Fimland, Katsumi Kishino, Mohana K. Rajpalke

Publikováno v: Scientific Reports
Scientific Reports, Vol 10, Iss 1, Pp 1-12 (2020)
Liudi Mulyo, A, Rajpalke, M K, Vullum, P E, Weman, H, Kishino, K & Fimland, B-O 2020, ' The influence of AlN buffer layer on the growth of self-assembled GaN nanocolumns on graphene ', Scientific Reports, vol. 10, no. 1, 853 . https://doi.org/10.1038/s41598-019-55424-z

GaN nanocolumns were synthesized on single-layer graphene via radio-frequency plasma-assisted molecular beam epitaxy, using a thin migration-enhanced epitaxy (MEE) AlN buffer layer as nucleation sites. Due to the weak nucleation on graphene, instead

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d27532bd0b0f9007376d16cae46d78c
http://europepmc.org/articles/PMC6972738

Chemical vapor deposition of graphene on platinum: Growth and substrate interaction

Autor: Seungjin Nam, Sangwook Lee, Helge Weman, Dong Chul Kim, Jungtae Nam, Wonki Lee, Hoyeol Yun, Jun Yeon Hwang, Dong Hoon Shin, Keun Soo Kim

Publikováno v: Carbon. 111:733-740

Low-pressure chemical vapor deposition of graphene has been investigated on various Pt substrates such as e-beam deposited films, sputtered films, and polycrystalline foils. High temperature sputtering is found to be crucial in growing single layer g

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::31bb238878d8806bde67e7a01bff61fd
https://doi.org/10.1016/j.carbon.2016.10.048

New Insights into the Origins of Sb-Induced Effects on Self-Catalyzed GaAsSb Nanowire Arrays

Autor: Bjørn-Ove Fimland, A. Mazid Munshi, Dingding Ren, Julie S. Nilsen, Helge Weman, J F Reinertsen, Antonius T. J. van Helvoort, Anders Gustafsson, D L Dheeraj, Chengjun Jin, Junghwan Huh

Publikováno v: Nano Letters. 16:1201-1209

Ternary semiconductor nanowire arrays enable scalable fabrication of nano-optoelectronic devices with tunable bandgap. However, the lack of insight into the effects of the incorporation of Vy element results in lack of control on the growth of ternar

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ad59236bd0c117b8e06060a5014cc54
https://doi.org/10.1021/acs.nanolett.5b04503