Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Helene Jacquinot"'
Autor:
Emmanuel Rolland, Helene Jacquinot, Thomas Lorne, F. Gaillard, Florence Servant, Geoffroy Godet, Jose Lugo-Alvarez, T. Taris, Emmanuel Augendre
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, 2020, 67 (11), pp.4654-4657. ⟨10.1109/TED.2020.3023063⟩
IEEE Transactions on Electron Devices, 2020, 67 (11), pp.4654-4657. ⟨10.1109/TED.2020.3023063⟩
International audience; This article provides guidelines to design porous silicon (PS) layers regarding optimization of small signal properties in passive structures for radio frequency (RF): insertion loss and crosstalk. Results are based on high-fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::46bc189812d908dd7f6f18058bb1964a
https://cea.hal.science/cea-03676642
https://cea.hal.science/cea-03676642
Autor:
Thierry Lacrevaz, Jean-Charles Barbe, Remi Velard, Alexis Farcy, Lucile Cheramy, Kevin Morot, Bernard Flechet, Roselyne Segaud, Helene Jacquinot, Lucile Arnaud
Publikováno v:
2018 IEEE 68th Electronic Components and Technology Conference (ECTC)
2018 IEEE 68th Electronic Components and Technology Conference (ECTC), May 2018, San Diego, United States. pp.2000-2006, ⟨10.1109/ECTC.2018.00300⟩
2018 IEEE 68th Electronic Components and Technology Conference (ECTC), May 2018, San Diego, United States. pp.2000-2006, ⟨10.1109/ECTC.2018.00300⟩
This work aims at providing a RLCG modeling and performance optimization of Redistribution Layer (RDL) in a non-HR substrate up to 67 GHz. Similarly to TSVs, RDL modeling can not be assessed by standard parasitic extraction CAD tools. Therefore, we p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2e4971ab4228f2193472a951f2cd5b07
https://hal.science/hal-02015694
https://hal.science/hal-02015694
Publikováno v:
2017 IEEE 67th Electronic Components and Technology Conference (ECTC).
This work aims at providing a RLCG modeling ofthe 10 µm fine-pitch microbump type interconnects in the 100 MHz-40 GHz frequency band based on characterization approach. RF measurements are performed on two-port test structures within a short-loop wi
Autor:
Helene Jacquinot, Alexis Farcy, Kevin Morot, Bernard Flechet, Cedric Bermond, Thierry Lacrevaz
Publikováno v:
2016 6th Electronic System-Integration Technology Conference (ESTC)
2016 6th Electronic System-Integration Technology Conference (ESTC), Sep 2016, Grenoble, France. pp.1-6, ⟨10.1109/ESTC.2016.7764483⟩
2016 6th Electronic System-Integration Technology Conference (ESTC), Sep 2016, Grenoble, France. pp.1-6, ⟨10.1109/ESTC.2016.7764483⟩
The continuous requirement of higher communication bandwidths in data centers or high performance computers drives the convergence between ASICs and optical I/Os. Combining 3D integration and Si-photonic technologies on a photonic interposer platform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ed032b33c2ca93311e03894b77366fbe
https://hal.archives-ouvertes.fr/hal-02003969
https://hal.archives-ouvertes.fr/hal-02003969
Autor:
Helene Jacquinot, David Denis
Publikováno v:
2013 IEEE 63rd Electronic Components and Technology Conference.
Integrated trench high density MIS (Metal Insulator Semiconductor) capacitors in Si-interposer are of great interest as they provide decoupling in a smart way using the third dimension of the silicon substrate. However, the use of various highly inte
Autor:
Helene Jacquinot, Pierre Vincent, Dominique Morche, Stephane Paquelet, Sylvain Bourdel, Francois Dehmas, O. Fourquin, Alexis Bisiaux, Jean Gaubert, Gilles Masson
Publikováno v:
ESSCIRC
This paper describes the integration in a 0.13 µm CMOS of an Ultra Wide Band (UWB) receiver for communication and localization. It operates in the whole 3.2-to-4.7 GHz band of the IEEE.802.15.4a regulation mask. The proposed double quadrature cohere
Publikováno v:
2000 30th European Microwave Conference.
Bipolar VCO and prescaler for 5GHz low cost wireless applications are presented. These circuits are implemented in a 0.35?m BiCMOS SiGe process (FT=45GHz). Phase noise value for a 4.82GHz bipolar VCO is ?12ldBc/Hz at 1MHz frequency offset. Based on C