Zobrazeno 1 - 3
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pro vyhledávání: '"Helena V. Alberto"'
Publikováno v:
Journal of Physics: Conference Series. 2462:012056
A general scheme for the reaction of muonium with the host lattice of semiconductors and insulators is derived. We begin our considerations when the muonium has been slowed down to a kinetic energy of one to a few eV, an energy at which electron exci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d6be7a08ec20c3caa386f12affb180a
https://doi.org/10.1088/1742-6596/2462/1/012056
https://doi.org/10.1088/1742-6596/2462/1/012056
Publikováno v:
Journal of Physics: Conference Series. 2462:012055
The analysis of depth-dependent data of thin film semiconductor heterostructures is discussed in this work. The data is obtained by varying muon implantation energy, E, using the Low-Energy Muon (LEM) facility at PSI, Switzerland. Since the measureme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c671fadec1a11ddebb181e0ee332c34
https://doi.org/10.1088/1742-6596/2462/1/012055
https://doi.org/10.1088/1742-6596/2462/1/012055
Autor:
Helena V. Alberto, Rui C. Vilão, Eduardo F. M. Ribeiro, João M. Gil, Marco A. Curado, Jennifer P. Teixeira, Paulo A. Fernandes, José M. V. Cunha, Pedro M. P. Salomé, Marika Edoff, Maria I. Martins, Thomas Prokscha, Zaher Salman, Alois Weidinger
As devices become smaller and more complex, the interfaces between adjacent materials become increasingly important and are often critical to device performance. An important research goal is to improve the interface between the absorber and the wind
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f00e865b1a4d0d0111debeff2cd1837
https://hdl.handle.net/10400.22/21845
https://hdl.handle.net/10400.22/21845
