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pro vyhledávání: '"Helen P. Springbett"'
Autor:
Fabien C.-P. Massabuau, Peter H. Griffin, Helen P. Springbett, Yingjun Liu, R. Vasant Kumar, Tongtong Zhu, Rachel A. Oliver
Publikováno v:
APL Materials, Vol 8, Iss 3, Pp 031115-031115-5 (2020)
Porosification of nitride semiconductors provides a new paradigm for advanced engineering of the properties of optoelectronic materials. Electrochemical etching creates porosity in doped layers while leaving undoped layers undamaged, allowing the rea
Externí odkaz:
https://doaj.org/article/dd6d3f824a7346ed9a95efae41250cf9
