Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Helen McLelland"'
Autor:
Khaled Elgaid, X. Cao, Martin Christopher Holland, Iain G. Thayne, Helen McLelland, Colin Stanley, Stephen Thoms, E. Boyd, David A. J. Moran
Publikováno v:
Thin Solid Films. 515:4373-4377
This paper reviews some of the recent work at the Nanoelectronics Research Centre at the University of Glasgow on the optimisation of 50 nm metamorphic GaAs and InP HEMTs. Typical DC and RF figures of merit obtained from 50 nm metamorphic GaAs HEMTs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e672df622cf3d51782294e811c1c71e
https://doi.org/10.1016/j.tsf.2006.07.104
https://doi.org/10.1016/j.tsf.2006.07.104
Publikováno v:
IEEE Transactions on Electron Devices. 53:2920-2925
Continued research into the development of III-V high-electron mobility transistors (HEMTs), specifically the minimization of the device gate length, has yielded the fastest performance reported for any three terminal devices to date. In addition, mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fac81f083a81a98682234839bb0880c9
https://doi.org/10.1109/ted.2006.885674
https://doi.org/10.1109/ted.2006.885674
Surface mass spectrometric analysis of SiCl4/SiF4/O2 dry etch gate recessed 120nm T-gate GaAs pHEMTs
Publikováno v:
Microelectronic Engineering. :233-238
In addition to the importance of the geometry of the gate recess trench in high performance 120nm gate length GaAs pseudomorphic high electron mobility transistors (pHEMTs), the recess etch surface condition is also a key parameter. Selective dry etc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b21bfb6e8284f10399dae7149331133a
https://doi.org/10.1016/j.mee.2004.12.032
https://doi.org/10.1016/j.mee.2004.12.032
Autor:
Iain G. Thayne, Helen McLelland, Khaled Elgaid, Douglas Macintyre, Colin Stanley, David A. J. Moran, Y. Chen, E. Boyd, Stephen Thoms
Publikováno v:
Microelectronic Engineering. :769-774
To address the major issues of increasing device frequency performance and reducing fabrication costs of 100 nm scale gate length III-V HEMT devices, two novel technologies developed for GaAs pHEMT are reported, namely: (i) A low resistance, non-anne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1147c0d3389c9e0fcb4c8eb0a0b8e05
https://doi.org/10.1016/s0167-9317(03)00137-0
https://doi.org/10.1016/s0167-9317(03)00137-0
Publikováno v:
IEEE Electron Device Letters. 32:599-601
We present the dc operation of hydrogen-terminated diamond field-effect transistors (FETs) with gate lengths of 1 μm to 50 nm. The 50-nm device metrics include a maximum drain current of 290 mA/mm and a peak extrinsic transconductance of 95 mS/mm. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f4ba9c7341e2128d129f918ef2b8980
https://doi.org/10.1109/led.2011.2114871
https://doi.org/10.1109/led.2011.2114871
Publikováno v:
Microelectronic Engineering. :633-640
Reactive ion etching for T-gate recessing has a vital importance in the fabrication of high performance sub-micron gate length GaAs pseudomorphic high electron mobility transistors (pHEMTs), because the geometry after etching significantly affects th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d324030000584cdda58a657f049e446b
https://doi.org/10.1016/s0167-9317(01)00495-6
https://doi.org/10.1016/s0167-9317(01)00495-6
Autor:
Martin Christopher Holland, Helen McLelland, C.R. Stanley, I.G. Thayne, Khaled Elgaid, David A. J. Moran
Publikováno v:
IEEE Electron Device Letters. 26:784-786
GaAs-based transistors with the highest f/sub T/ and lowest noise figure reported to date are presented in this letter. A 50-nm T-gate In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As metamorphic high-electron mobility transistors (mHEMTs) on a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::804c5dadc5d03436f5db6f53145d2074
https://doi.org/10.1109/led.2005.857716
https://doi.org/10.1109/led.2005.857716
Autor:
P. C. Main, Alain Nogaret, T.J. Foster, Helen McLelland, Mohamed Henini, Humberto A. Carmona, Mark G. Blamire, Andre K. Geim, S. P. Beaumont
Publikováno v:
Surface Science. :328-332
We have measured the magnetoresistance measurements of a 2D electron gas subjected to a periodic magnetic field created by the presence of type II superconducting stripes on the surface of the heterostructure. We observe oscillatory behaviour due to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e4699aede8aa0c02b0d9084643c9af3
https://doi.org/10.1016/0039-6028(96)00414-1
https://doi.org/10.1016/0039-6028(96)00414-1
Autor:
Mark G. Blamire, Alain Nogaret, Andre K. Geim, T.J. Foster, Helen McLelland, S. P. Beaumont, P. C. Main, Humberto A. Carmona, Mohamed Henini
Publikováno v:
Solid-State Electronics. 40:217-220
We report on the motion of two-dimensional electrons in a magnetic field which is periodic on the scale of a few hundred nanometres. Such a system exhibits novel magnetoresistance oscillations that we unambiguously identify as due to a commensurabili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5af5086db9bf9dc710fb5800c5817442
https://doi.org/10.1016/0038-1101(95)00252-9
https://doi.org/10.1016/0038-1101(95)00252-9
Autor:
S. P. Beaumont, Helen McLelland, Alain Nogaret, P. C. Main, T.J. Foster, Laurence Eaves, MJ Gompertz, Mohamed Henini
Publikováno v:
Solid-State Electronics. 40:447-451
We report on tunnelling transport through a novel quantum device consisting of a double barrier structure fabricated as a submicron square loop in the plane of growth. We find two kinds of quantum confinement coexist in such a device: near the curren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::939914b0fd5c20e9483bec4c7488ae34
https://doi.org/10.1016/0038-1101(95)00308-8
https://doi.org/10.1016/0038-1101(95)00308-8