Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Helen L. Maynard"'
Autor:
Tianchun Ye, Dapeng Chen, Deven Raj, Wei Zou, Huilong Zhu, Wang Yao, Liang Qingqing, Chao Zhao, Siamak Salimian, Jinbiao Liu, Jinjuan Xiang, Shan Tang, Guilong Tao, Junfeng Li, Xiaolei Wang, Gaobo Xu, Qiuxia Xu, Helen L. Maynard
Publikováno v:
IEEE Transactions on Electron Devices. 65:2400-2405
This paper proposed, for the first time, that the band-edge effective work functions (EWFs) are achieved by employing PH3 plasma doping (PLAD) TiN metal gate for nMOS device application under replacement metal gate and high dielectric constant (k) di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68e648486be89a3320bfed01f630c142
https://doi.org/10.1109/ted.2018.2823337
https://doi.org/10.1109/ted.2018.2823337
Publikováno v:
2017 17th International Workshop on Junction Technology (IWJT).
As transistor technologies continue to scale and device density increases, junction formation requirements are subject to increasing challenges. Ion implantation is the preferred approach for junction formation due to its precise control of dopant de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df60cd3d29341e8477048f698b1af8b7
https://doi.org/10.23919/iwjt.2017.7966514
https://doi.org/10.23919/iwjt.2017.7966514
Publikováno v:
2016 21st International Conference on Ion Implantation Technology (IIT).
SiF4 PLAD has been systematically characterized and optimized. The correlations between the etching, deposition, retained F dose and profile as functions of the PLAD process variables including implant voltage, RF power, pressure, pulse duty cycle, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::293aa321f44c989999427c412e66a4d9
https://doi.org/10.1109/iit.2016.7882855
https://doi.org/10.1109/iit.2016.7882855
Autor:
Helen L. Maynard, Jeremy P. Meyers
Publikováno v:
Journal of Power Sources. 109:76-88
In this paper, we consider the design of a miniaturized proton-exchange membrane (PEM) fuel cell for powering 0.5–20 W portable telecommunication and computing devices. Our design is implemented on a silicon substrate to take advantage of advanced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a0dbe458ed88db3c4ccb8c868236e7b
https://doi.org/10.1016/s0378-7753(02)00066-6
https://doi.org/10.1016/s0378-7753(02)00066-6
Publikováno v:
2014 20th International Conference on Ion Implantation Technology (IIT).
A conformal doping technique is demonstrated for 3D finFET source/drain extensions using a plasma doping (PLAD) system. The arsenic dopant distribution at the top and the sidewalls of the fin was characterized by Energy Dispersive X-Ray spectroscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bcf289c215f16c3eff6e49cc87295cb
https://doi.org/10.1109/iit.2014.6939993
https://doi.org/10.1109/iit.2014.6939993
Publikováno v:
2014 International Workshop on Junction Technology (IWJT).
Multiple Vt tuning is required for SOC FinFET devices at and beyond the 22nm technology node. Traditional Vt tuning method used for planar devices is limited in terms of tuning range and sensitivity. Alternative approaches are needed to enable muti-V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e98416cd97e6acb6918ab5fc3949a4b8
https://doi.org/10.1109/iwjt.2014.6842043
https://doi.org/10.1109/iwjt.2014.6842043
Publikováno v:
Journal of The Electrochemical Society. 143:2029-2035
We demonstrate that the endpoint of an etching process can be determined by monitoring only values in the plasma tool's radio-frequency (RF) power system, the reflected power from the plasma source and wafer platen power supplies, capacitor values in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::184cd4a44dc6fd2b02a221f5ee13d9ef
https://doi.org/10.1149/1.1836944
https://doi.org/10.1149/1.1836944
Autor:
Yun Wang, Hans-Joachim L. Gossmann, Naushad Variam, Yuri Erokhin, Helen L. Maynard, Christopher R. Hatem, Shaoyin Chen
Publikováno v:
2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors.
Strain engineering has become a workhorse in increasing charge carrier mobility to boost performance for sub-45nm CMOS logic technologies. While pFET transistors with embedded Si 1−x Ge x layers in the S/D region have been widely employed to induce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8953b7c53ae957bad62e4aab7b982ef7
https://doi.org/10.1109/rtp.2008.4690549
https://doi.org/10.1109/rtp.2008.4690549
Publikováno v:
SPIE Proceedings.
The temperatures that wafers reach in plasma etching processes result from a balance of several factors including energetic particle bombardment heating, exothermic chemical reactions, radiative cooling, and gas phase viscous and molecular cooling. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e5380fe68a49013c83aff6e7dce6471
https://doi.org/10.1117/12.59750
https://doi.org/10.1117/12.59750
Autor:
Jeremy P. Meyers, Helen L. Maynard
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20:1287
We discuss key integration issues and engineering trade offs germane to all miniaturized fuel cell systems: thermal management, humidification control, water recirculation, air movement, fuel delivery, and power conditioning. We propose a design for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d712dbbe95ed9caaeb07b93dac6009c
https://doi.org/10.1116/1.1488641
https://doi.org/10.1116/1.1488641