Zobrazeno 1 - 10
of 308
pro vyhledávání: '"Hele Savin"'
Autor:
Patrick Mc Kearney, Sören Schäfer, Xiaolong Liu, Simon Paulus, Ingo Lebershausen, Behrad Radfar, Ville Vähänissi, Hele Savin, Stefan Kontermann
Publikováno v:
Advanced Photonics Research, Vol 5, Iss 6, Pp n/a-n/a (2024)
The impact of three different pulse durations (100 fs, 1, and 10 ps) on the formation of laser hyperdoped black silicon with respect to surface morphology, sub‐bandgap absorptance, the sulfur concentration profile, and the effective minority carrie
Externí odkaz:
https://doaj.org/article/a55cd2180cc84f298133949b55a84769
Autor:
Vladyslav Matkivskyi, Oskari Leiviskä, Sigurd Wenner, Hanchen Liu, Ville Vähänissi, Hele Savin, Marisa Di Sabatino, Gabriella Tranell
Publikováno v:
Materials, Vol 16, Iss 16, p 5522 (2023)
Two widely used atomic layer deposition precursors, Tetrakis (dimethylamido) titanium (TDMA-Ti) and titanium tetrachloride (TiCl4), were investigated for use in the deposition of TiOx-based thin films as a passivating contact material for solar cells
Externí odkaz:
https://doaj.org/article/f8b0c094655845f68b7389d18f9b91f7
Autor:
Joonas Isometsä, Zahra Jahanshah Rad, Tsun H. Fung, Hanchen Liu, Juha-Pekka Lehtiö, Toni P. Pasanen, Oskari Leiviskä, Mikko Miettinen, Pekka Laukkanen, Kalevi Kokko, Hele Savin, Ville Vähänissi
Publikováno v:
Crystals, Vol 13, Iss 4, p 667 (2023)
Germanium is an excellent material candidate for various applications, such as field effect transistors and radiation detectors/multijunction solar cells, due to its high carrier mobilities and narrow bandgap, respectively. However, the efficient pas
Externí odkaz:
https://doaj.org/article/8eee7eeb28bc4cb79d51591e4741e569
Publikováno v:
Advanced Photonics Research, Vol 3, Iss 4, Pp n/a-n/a (2022)
The femtosecond‐pulsed laser processed black silicon (fs‐bSi) features high absorptance in a wide spectral range but suffers from high amount of laser induced damage as compared with bSi fabricated by other methods. Here, the aim is to minimize t
Externí odkaz:
https://doaj.org/article/3558b5480c6a4c4f80230504c05d9389
Autor:
Joonas Isometsä, Tsun Hang Fung, Toni P. Pasanen, Hanchen Liu, Marko Yli-koski, Ville Vähänissi, Hele Savin
Publikováno v:
APL Materials, Vol 9, Iss 11, Pp 111113-111113-7 (2021)
Desirable intrinsic properties, namely, narrow bandgap and high carrier mobility, make germanium (Ge) an excellent candidate for various applications, such as radiation detectors, multi-junction solar cells, and field effect transistors. Nevertheless
Externí odkaz:
https://doaj.org/article/bd532dc1f16748809a790a0a9f15e4db
Autor:
Zhen Zhu, Perttu Sippola, Oili M. E. Ylivaara, Chiara Modanese, Marisa Di Sabatino, Kenichiro Mizohata, Saoussen Merdes, Harri Lipsanen, Hele Savin
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-8 (2019)
Abstract In this work, we report the successful growth of high-quality SiO2 films by low-temperature plasma-enhanced atomic layer deposition using an oxidant which is compatible with moisture/oxygen sensitive materials. The SiO2 films were grown at 9
Externí odkaz:
https://doaj.org/article/4a10cddf023348fabf335679737f0351
Autor:
Haibing Huang, Jun Lv, Yameng Bao, Rongwei Xuan, Shenghua Sun, Sami Sneck, Shuo Li, Chiara Modanese, Hele Savin, Aihua Wang, Jianhua Zhao
Publikováno v:
Data in Brief, Vol 11, Iss C, Pp 27-31 (2017)
This data article is related to our recently published article (‘20.8% industrial PERC solar cell: ALD Al2O3 rear surface passivation, efficiency loss mechanisms analysis and roadmap to 24%’, Huang et al., 2017 [1]) where we have presented a syst
Externí odkaz:
https://doaj.org/article/5118adde1a8e4fdcb3ac1d9d6c22fa5a
Autor:
Haibing Huang, Jun Lv, Yameng Bao, Rongwei Xuan, Shenghua Sun, Sami Sneck, Shuo Li, Chiara Modanese, Hele Savin, Aihua Wang, Jianhua Zhao
Publikováno v:
Data in Brief, Vol 11, Iss C, Pp 19-26 (2017)
This data article is related to the recently published article ‘20.8% industrial PERC solar cell: ALD Al2O3 rear surface passivation, efficiency loss mechanisms analysis and roadmap to 24%’ (Huang et al., 2017) [1]. This paper is about passivated
Externí odkaz:
https://doaj.org/article/64cce48eeaa44ac39f86d4145853a2f5
Publikováno v:
HardwareX, Vol 4, Iss , Pp - (2018)
Three types of highly-customizable open source probe positioning systems are evaluated: (a) mostly 3-D printed, (b) partially printed using OpenBeam kinematic constraints, and (c) a 3-level stack of low-cost commercial single axis micropositioners an
Externí odkaz:
https://doaj.org/article/19338d2ecd0a47068db5a2156ab290fd
Publikováno v:
AIP Advances, Vol 8, Iss 1, Pp 015112-015112-7 (2018)
The presence of copper (Cu) contamination is known to cause relevant light-induced degradation (Cu-LID) effects in p-type silicon. Due to its high diffusivity, Cu is generally regarded as a relatively benign impurity, which can be readily relocated d
Externí odkaz:
https://doaj.org/article/41cfaac00f624b6cb06b6441e5b60adc