Zobrazeno 1 - 10
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pro vyhledávání: '"Held R"'
A new concept for nonvolatile superconducting memories is proposed. The devices combine ferromagnetic dots for the storage of the data and Josephson junctions for their readout. Good scalability is expected for large scale integration. First memory c
Externí odkaz:
http://arxiv.org/abs/cond-mat/0506647
Publikováno v:
In Journal of Dairy Science October 2018 101(10):9439-9450
Autor:
Schneider, C. W., Hembacher, S., Hammerl, G., Held, R., Schmehl, A., Weber, A., Kopp, T., Mannhart, J.
Publikováno v:
Phys. Rev. Lett. 92, 257003 (2004)
The current-induced dissipation in YBCO grain boundary tunnel junctions has been measured between 4.2 K and 300 K. It is found that the resistance of 45 degree (100)/(110) junctions decreases linearly by a factor of four when their temperature is inc
Externí odkaz:
http://arxiv.org/abs/cond-mat/0307470
Autor:
Hart, C. B., Held, R., Hoiland, P. K., Jenks, S., Loup, F., Martins, D., Nyman, J., Pertierra, J. P., Santos, P. A., Shore, M. A., Sims, R., Stabno, M., Teage, T. O. M.
The problems of hazardous radiation and collisions with matter on a warp driven ship pose considerable obstacles to this possibility for interstellar travel. A solution to these problems lies in the Broeck metric. It is demonstrated that both threats
Externí odkaz:
http://arxiv.org/abs/gr-qc/0207109
It will be shown that while horizons do not exist for warp drive spacetimes traveling at subluminal velocities horizons begin to develop when a warp drive spacetime reaches luminal velocities. However it will be shown that the control region of a war
Externí odkaz:
http://arxiv.org/abs/gr-qc/0202021
Autor:
Senz, V., Heinzel, T., Ihn, T., Lindemann, S., Held, R., Ensslin, K., Wegscheider, W., Bichler, M.
Publikováno v:
J.Phys.Cond.Mat.13,3831(2001)
The temperature dependence of the conductance of a quantum point contact has been measured. The conductance as a function of the Fermi energy shows temperature-independent fixed points, located at roughly multiple integers of $e^{2}/h$. Around the fi
Externí odkaz:
http://arxiv.org/abs/cond-mat/0012205
Publikováno v:
Appl. Phys. Lett. 75, 2452 (1999)
A single-electron transistor has been realized in a Ga[Al]As heterostructure by oxidizing lines in the GaAs cap layer with an atomic force microscope. The oxide lines define the boundaries of the quantum dot, the in-plane gate electrodes, and the con
Externí odkaz:
http://arxiv.org/abs/cond-mat/9909340