6-12 GHz Double-Balanced Image-Reject Mixer MMIC in 0.25μm AlGaN/GaN Technology

Autor: Heijningen, M. van, Hoogland, J.A., Hek, A.P. de, Vliet, F.E. van

Publikováno v: International Journal of Microwave and Wireless Technologies, June, 3/4, 7, 307-315
European Microwave Week EuMW 2014, Proceedings of the 9th European Microwave Integrated Circuits Conference, EuMIC 2014, 6-7 Oct 2014, Rome, Italy, 65-68

The front-end circuitry of transceiver modules is slowly being updated from GaAs-based monolithic microwave integrated circuits (MMICs) to Gallium-Nitride (GaN). Especially GaN power amplifiers and T/R switches, but also low-noise amplifiers (LNAs),

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::a415d3f6d6f021a6de09fe5fc4f8af9e
http://resolver.tudelft.nl/uuid:150fcf00-1b04-458d-a4c8-4b7adf35da03

1 GHz GaAs Buck Converter for High Power Amplifier Modulation Applications

Autor: Busking, E.B., Hek, A.P. de, Vliet, F.E. van

Publikováno v: 15th European Microwave Week 2012, EuMW2012: Space for Microwaves-Proceedings of the 7th European Microwave Integrated Circuits Conference, EuMIC 2012, 29-30 October 2012, Amsterdam, The Netherlands

A fully integrated 1 GHz buck converter output stage, including on-chip inductor and DC output filtering has been realized, in a standard high-voltage breakdown GaAs MMIC technology. This is a significant step forward in designing highspeed power con

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::a7c153e084908af10cdc92f5c33543a4
http://resolver.tudelft.nl/uuid:b31b007f-1f4d-4d95-853b-5c224219b268

Broadband S-band class E HPA

Autor: Wanum, M. van, Dijk, R. van, Hek, A.P. de, Vliet, F.E. van

Publikováno v: Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European, 29-32
STARTPAGE=29;ENDPAGE=32;TITLE=Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European
European Microwave Week 2009-EuMW 2009-4th European Microwave Integrated Circuits Conference-EuMIC 2009, 28 September-2 October 2009, Rome, Italy, 29-32

A broadband class E High Power Amplifier (HPA) is presented. This HPA is designed to operate at S-band (2.75 to 3.75 GHz). A power added efficiency of 50% is obtained for the two stage amplifier with an output power of 35.5 dBm on a chip area of 5.25

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::e3cf7f8cd7369c5e3fd1e870204cca6f
https://research.utwente.nl/en/publications/1e092eae-c98e-4b81-ba85-6964f5d6d260

Dispersion Free Doped and Undoped AlGaN/GaN HEMTs on Sapphire and SiC Substrates

Autor: Kraemer, M.C.J.C.M., Jacobs, B., Kwaspen, J.J.M., Suijker, E.M., Hek, A.P. de, Karouta, F., Kaufmann, L.M.F., Hoskens, R.C.P.

Publikováno v: Krämer, M.C.J.C.M. ; Hoskens, R.C.P. ; Jacobs, B. ; Kwaspen, J.J.M. ; Suijker, E.M. ; de Hek, A.P. ; Karouta, F. ; Kaufmann, L.M.F. (2004) Dispersion Free Doped and Undoped AlGaN/GaN HEMTs on Sapphire and SiC Substrates. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
European Microwave Week-GAAS 2004; 12th Gallium Arsenide and other Compound Semiconductors Application Symposium 11-12 October 2004, RAI, Amsterdam, The Netherlands, 75-78

We present dispersion free pulsed current voltage (I-V) and radio frequency (RF) power results of undoped and doped AlGaN/GaN HEMTs on sapphire and SiC substrates. The most significant processing step leading to these results is the application of a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9a8e4a4e0b573d6891adb8f752d64bef
http://resolver.tudelft.nl/uuid:03267564-7730-4682-a0c7-735803f09c31

Mixed Signal High Integration MMIC Phase Control Device for Application in Phased-Arrays

Autor: Toshev, A., Graaf, M.W. van der, Hek, A.P. de, Boer, A. de, Arnaudov, R., Vineshki, I., Kamenopolsky, S., Hlebarov, Z.

Publikováno v: Toshev, A. ; van der Graaf, M.W. ; de Hek, A.P. ; de Boer, A. ; Arnaudov, A. ; Vineshki, I. ; Kamenopolsky, S. ; Hlebarov, Z. (2002) Mixed Signal High Integration MMIC Phase Control Device for Application in Phased-Arrays. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
European Microwave Week 2002-EuMW 2002-Proceedings of the 10th European Gallium Arsenide and other semiconductors Application Symposium-GAAS 2002, 23-24 September 2002, Fiera de Milano, Italy., 433-436

A MMIC multi-port highly-íntegrated phase control device, suitable for applícation in low cosl phased-array antennas is presented. The MMIC consists of eìght LNAs, eight sets of RF-switches, a phase manifold, eight phase shifter networks for phase

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b08ac49469823f0f6790568e7b7d3339
http://amsacta.unibo.it/124/