Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Heinz Siegwart"'
Autor:
Jacqueline Geler-Kremer, Felix Eltes, Pascal Stark, David Stark, Daniele Caimi, Heinz Siegwart, Bert Jan Offrein, Jean Fompeyrine, Stefan Abel
Publikováno v:
Nature Photonics, 16 (7)
A novel class of programmable integrated photonic circuits has emerged over the past years, strongly driven by approaches to tackle unsolved computing problems in the optical domain. Photonic neuromorphic and quantum computing are examples of optical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d77bd52bb6974a8861af060e7b96ab3
https://doi.org/10.1038/s41566-022-01003-0
https://doi.org/10.1038/s41566-022-01003-0
Autor:
Jacqueline Geler-Kremer, Felix Eltes, Pascal Stark, David Stark, Daniele Caimi, Heinz Siegwart, Bert Jan Offrein, Jean Fompeyrine, Stefan Abel
Publikováno v:
Nature Photonics. 16:548-548
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac5ffd402bc951e2440a440d669680b5
https://doi.org/10.1038/s41566-022-01041-8
https://doi.org/10.1038/s41566-022-01041-8
Autor:
Felix Eltes, Gerardo Villarreal Garcia, Daniele Caimi, Heinz Siegwart, Antonio Andreas Gentile, Andy Hart, Pascal Stark, Graham Marshall, Mark Thompson, Jorge Barreto, Jean Fompeyrine, Stefan Abel
Publikováno v:
University of Bristol-PURE
Integrated electrical and photonic circuits (PIC) operating at cryogenic temperatures are fundamental building blocks required to achieve scalable quantum computing, and cryogenic computing technologies. Optical interconnects offer better performance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a606bdd5086f1c8fa16417dd8e11776d
Autor:
Marilyne Sousa, Youri Popoff, Daniele Caimi, Chiara Marchiori, Alexander A. Demkov, Lukas Czornomaz, Heinz Siegwart, Kristy J. Kormondy, Patrick Ponath, Stefan Abel, Florian Fallegger, Emanuele Uccelli, Jean Fompeyrine, Agham Posadas
Publikováno v:
Microelectronic Engineering. 147:215-218
Display Omitted Highly crystalline BaTiO3 was integrated on Si using molecular beam epitaxy.Electro-optic response was evaluated for a-axis, c-axis, and mixed films.Increased a-axis fraction correlated with increased electro-optic response.Post-depos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7fe154496c8f9369dbf3978a9055601
https://doi.org/10.1016/j.mee.2015.04.041
https://doi.org/10.1016/j.mee.2015.04.041
Autor:
Jean-Michel Hartmann, Vladimir Djara, N. Daix, Jean Fompeyrine, Lukas Czornomaz, C. Rossel, Emanuele Uccelli, Heinz Siegwart, Daniele Caimi, Marilyne Sousa, Chiara Marchiori
Publikováno v:
ECS Transactions. 64:199-209
1. Introduction As Si-CMOS scaling is becoming increasingly challenging, III-V compound semiconductors such as InxGa1-xAs (x≥0.53) (InGaAs) are receiving an increasing interest as channel material for nFET [1,2]. Together with SiGe as a pFET channe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b4c25000b8c8855aaa51f976f1c79e4a
https://doi.org/10.1149/06405.0199ecst
https://doi.org/10.1149/06405.0199ecst
Autor:
Daniele Caimi, Chiara Marchiori, C. Rossel, M. Bjoerk, M. El Kazzi, Marinus Hopstaken, Heinz Siegwart, Lukas Czornomaz, Jean Fompeyrine, P. Machler
Publikováno v:
Solid-State Electronics. 74:71-76
CMOS compatible self-aligned access regions for indium gallium arsenide (In 0.53 Ga 0.47 As) implant-free n-type metal oxide semiconductor eld effect transistors (MOSFETs) are investigated. In situ doped n+source/drain regions are selectively grown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58fc469ef11b8d37ec3728f5cce03a65
https://doi.org/10.1016/j.sse.2012.04.014
https://doi.org/10.1016/j.sse.2012.04.014
Autor:
Christian Gerl, Lukas Czornomaz, David J. Webb, M. Sousa, C. Rossel, M. El Kazzi, Daniele Caimi, Jean Fompeyrine, Heinz Siegwart, Chiara Marchiori, M. Richter
Publikováno v:
Microelectronic Engineering. 88:1066-1069
Experiments to increase the specific capacitance of MOS capacitors consisting of HfO"2 on a passivating interfacial layer (IL) of amorphous Si (a-Si) on GaAs are described. XPS analysis of the layers and electrical measurements on the capacitors are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fea672574d9cc58fbc7405a39576fa1
https://doi.org/10.1016/j.mee.2011.03.151
https://doi.org/10.1016/j.mee.2011.03.151
Autor:
Daniele Caimi, M. Sousa, David J. Webb, C. Rossel, Teya Topuria, Jean Fompeyrine, Philip M. Rice, Christian Gerl, Chiara Marchiori, M. Richter, Heinz Siegwart
Publikováno v:
Journal of Crystal Growth. 323:387-392
For heterogeneous integration of III-V compound materials on 200 mm Si wafers, we present a complete in-situ molecular beam epitaxy (MBE) process from a Ge strain compensating buffer on Si to GaAs heteroepitaxy. The whole growth process, including hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06633135b2720e1d9a972c7cbe8be13e
https://doi.org/10.1016/j.jcrysgro.2010.12.002
https://doi.org/10.1016/j.jcrysgro.2010.12.002
Autor:
Chiara Marchiori, Roland Germann, Alessandro C. Callegari, Jean Fompeyrine, Yuan-Chen Sun, David J. Webb, N. Hoffmann, M. Sousa, Edward W. Kiewra, A. Dimoulas, Heinz Siegwart, J. P. de Souza, Jean-Pierre Locquet, Santos F. Alvarado, C. Rossel, S. Nakagawa
Publikováno v:
Microelectronic Engineering. 84:2142-2145
We report a study of MOS capacitors having a dielectric of HfO"2 and an interlayer of Si deposited in-situ, by MBE on GaAs surfaces prepared with various surface-reconstructions. Interface state densities of about 1x10^1^2 eV^-^1cm^-^2 have been obta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd4c450bbd8d08bb5cb7a150bb54fa1d
https://doi.org/10.1016/j.mee.2007.04.056
https://doi.org/10.1016/j.mee.2007.04.056
Autor:
Veeresh Deshpande, C.-W. Weng, K.-T. Shiu, D. Lubyshev, Daniele Caimi, Lukas Czornomaz, J. M. Hartmann, N. Daix, Emanuele Uccelli, A. Liu, R. Steiner, Michael F. Lofaro, Jean Fompeyrine, Chiara Marchiori, D. K. Sadana, Mahadevaiyer Krishnan, Heinz Siegwart, C. Rossel, Marilyne Sousa, Vladimir Djara
Publikováno v:
2015 Symposium on VLSI Technology (VLSI Technology).
We report on the first demonstration of ultra-thin body (50 nm), low defectivity 200 mm InGaAs-on-insulator (-OI) fabricated by direct wafer bonding technique (DWB) as well as a replacement gate process for self-aligned fully depleted InGaAs MOSFETs.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a19cadec00cf65f8ec90ed285f6439af
https://doi.org/10.1109/vlsit.2015.7223668
https://doi.org/10.1109/vlsit.2015.7223668