Zobrazeno 1 - 10
of 74
pro vyhledávání: '"Heinz H. Busta"'
Publikováno v:
2020 33rd International Vacuum Nanoelectronics Conference (IVNC).
We investigated cleaved MOS capacitors and field effect transistors (FETs) for potential gate-controlled field emission. For the MOS capacitors we found that electrons can emerge from the accumulated region travelling to the gate, but only a small am
Publikováno v:
2016 29th International Vacuum Nanoelectronics Conference (IVNC).
By depositing thin layers of ∼17nm and ∼60nm of Ba on nanocrystalline graphite/CNT emitters, it was expected that the current density of the emitters, at a given extraction field, would increase by several orders of magnitudes due to the lowering
Autor:
Alan Feinerman, Tatjana Dankovic, Kasun Punchihewa, Heinz H. Busta, Payam Habibimehr, Evan Zaker, Sidra Farid
Publikováno v:
Procedia Engineering. 47:1243-1246
Bulk micromachined Pirani pressure gauges have been processed on 1 μm thick silicon nitride membranes and on 1μm thick nitride bridges resembling an H-shaped structure with the meander-shaped heating element positioned in the crossbar region of the
Publikováno v:
2014 27th International Vacuum Nanoelectronics Conference (IVNC).
The field emission heat engine (FEHE) is a novel thermionic converter with strong electric fields applied on the anode and/or cathode, to set up quantum tunneling barriers, so that electrons with energies lower than the surface vacuum level can still
Publikováno v:
Journal of Micromechanics and Microengineering. 11:720-725
By interposing a conductive shield with an opening between the movable microelectromechanical systems (MEMS) component and the substrate, it is possible to control pull-in forces and to increase pull-in voltages. Modeling results for different openin
Autor:
Nikolay V. Suetin, Heinz H. Busta, A. T. Rakhimov, M.A. Timofeyev, J.R. Fields, P. Bressler, A. Silzars, M. Schramme, Martin E. Kordesch, R.J. Espinosa
Publikováno v:
Solid-State Electronics. 45:1039-1047
Nanocrystalline graphite field emitters fabricated on silicon substrates have been characterized in terms of current–voltage, pressure dependency, long term stability, work function and lateral momentum. The work function is 4.0–4.2 eV and the co
Autor:
Heinz H. Busta
Publikováno v:
Journal of Micromechanics and Microengineering. 7:37-43
Sputtered SiC vertical edge emitters with a resistivity of cm, gate dimensions of 6, 9, 15, 25 and and an emitter-to-gate distance of have been fabricated using a combination of standard micromachining processes and chemical mechanical polishing (CMP
Autor:
Heinz H. Busta, Tatjana Dankovic, Poya Yasaei, Khodr Maamari, E. Tsang, N. Strach, A. Meyer, Alan Feinerman, Mrinal Mathur, Tejumade Durowade, A. Solat, J. Huang, Amirhossein Behranginia, J. Lee, Mohsen Purahmad, A. Raghunathan, S. Chang, I. Mohedano, K. Spratt, N. Krzyzanowski, H. Tahiru, M. Gouk, J. Counts, M. Valencia, X. Cui, M. Silvestri, X. Zhang, Maksym Plakhotnyuk
Publikováno v:
2013 26th International Vacuum Nanoelectronics Conference (IVNC).
A 20nm thick Ni resistor element was fabricated on a 1μm thick, 400μm wide silicon nitride bridge via bulk micromachining. By applying a given power to the resistor its temperature increases, as the pressure decreases, since fewer gas particles are
Publikováno v:
Applied Physics Letters. 83:1779-1781
Carbon black and carbon black mixed with silica nanoparticles were dispersed in Shipley 1818 photoresist and spun onto copper-coated silicon substrates. By using an appropriate amount of carbon black, the films are made conductive, at least in the ve
Autor:
S. K. Selvaraj, R. Kaur, C. Bhavanarayana, Tatjana Dankovic, B. Svean, J-Y Cheng, Alan Feinerman, K. Sliwa, F. Habeebuddin, Evan Zaker, D. Sorto, P. Habibimehr, Heinz H. Busta, Sidra Farid, S. Slusser, Kasun Punchihewa, M. Kirkpatrick
Publikováno v:
25th International Vacuum Nanoelectronics Conference.
Bulk micromachined Pirani gauges were designed and fabricated using an H-shaped 1 μm thick silicon nitride support structure and 30 nm of Ni for the meander resistors and connecting metal lines. The distance d between the resistor element and the co