Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Heiko Steinkemper"'
Publikováno v:
AIP Advances, Vol 6, Iss 12, Pp 125202-125202-6 (2016)
Incomplete ionization is an important issue when modeling silicon devices featuring aluminum-doped p+ (Al-p+) regions. Aluminum has a rather deep state in the band gap compared to boron or phosphorus, causing strong incomplete ionization. In this pap
Externí odkaz:
https://doaj.org/article/040fca1b77414d7da23daa3ddeb5357f
Publikováno v:
IEEE Journal of Photovoltaics. 7:450-457
The characterization and modeling of silicon solar cells under nonstandard conditions is an essential task in order to predict and optimize the annual yield when installed in the field. In this paper, focus is set on the temperature dependence of fun
Autor:
Ino Geisemeyer, Nico Tucher, Jochen Hohl-Ebinger, Heiko Steinkemper, Wilhelm Warta, Björn Müller, Martin C. Schubert
Publikováno v:
IEEE Journal of Photovoltaics. 7:19-24
The angle-dependent spectral response is measured for six differently textured silicon solar cells before and after encapsulation. Deviations from Lambert's cosine law and differences due to the textures can be clearly determined by means of an uncer
Publikováno v:
Progress in Photovoltaics: Research and Applications. 24:1319-1331
Solar cell production always requires a tradeoff between cell efficiency and production costs. This also concerns the choice of the silicon base material. In general, a long base lifetime is beneficial to achieve high conversion efficiency, but it st
Autor:
Jochen Hohl-Ebinger, W. Warta Fraunhofer, Heiko Steinkemper, Ino Geisemeyer, Nico Tucher, Björn Müller, Martin C. Schubert
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
Autor:
Martin Hermle, Heiko Steinkemper, Christian Reichel, Stefan W. Glunz, Frank Feldmann, Martin Bivour
Publikováno v:
Solar Energy Materials and Solar Cells. 131:46-50
Recently, n-type Si solar cells featuring a passivated rear contact, called TOPCon (Tunnel Oxide Passivated Contact) were reported. The high conversion efficiency of 24.4% and very high FF>82% demonstrates that the efficiency potential of this full-a
Autor:
Kurt-Ulrich Ritzau, Martin Bivour, Patrick Reinecke, Martin Hermle, Sebastian Schröer, Heiko Steinkemper, Florian Wagner
Publikováno v:
Solar Energy Materials and Solar Cells. 131:9-13
Silicon based heterojunction (SHJ) solar cells show high efficiency enabled through excellent passivation by amorphous silicon (a-Si:H), the use of light trapping schemes and transparent conductive layers. Many different research groups and companies
Publikováno v:
Solar Energy Materials and Solar Cells. 122:197-207
For applications to harvest solar energy, it is essential to characterize upconverter materials under broad-band excitation at reasonable irradiance levels achievable by concentration of solar radiation. We present a method to determine the absolute
Autor:
Karl Krämer, Heiko Steinkemper, Florian Hallermann, Stefan Fischer, Daniel Biner, Martin Hermle, G. von Plessen, Jan Christoph Goldschmidt
Publikováno v:
IEEE Journal of Photovoltaics. 2:134-140
Upconversion (UC) of subbandgap photons has the potential to increase solar cell efficiencies. In this paper, we first review our recent investigations of silicon solar cell devices with an attached upconverter based on β-NaYF4 :20%Er3+. Such device
Autor:
Jan Christoph Goldschmidt, Paul-Tiberiu Miclea, Stefan Schweizer, Florian Hallermann, Jacqueline A. Johnson, B. Herter, Sebastian Wolf, Stefan Fischer, Gero von Plessen, Bernd Ahrens, Heiko Steinkemper
Publikováno v:
Photon Management in Solar Cells
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc6c8877282998cafaa6ecb71f97b8c7
https://doi.org/10.1002/9783527665662.ch9
https://doi.org/10.1002/9783527665662.ch9