Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Heiko Stegmann"'
Autor:
Carles Bosch, Joerg Lindenau, Alexandra Pacureanu, Christopher J. Peddie, Marta Majkut, Andrew C. Douglas, Raffaella Carzaniga, Alexander Rack, Lucy Collinson, Andreas T. Schaefer, Heiko Stegmann
Correlative multimodal imaging is a useful approach to investigate complex structural relations in life sciences across multiple scales. For these experiments, sample preparation workflows that are compatible with multiple imaging techniques must be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8743dbd5e2211754851a9ea990788138
Autor:
Domenico, Mello, Giuseppe, Sciuto, Massimiliano, Astuto, Francesca Santangelo, M., Heiko, Stegmann, Cognigni, Flavio, Rossi, Marco
Publikováno v:
International Symposium for Testing and Failure Analysis.
In this work we present a new approach in physical failure analysis. Fault isolation can be done using volume diagnosis techniques. But when studying the identified defect sites by Focused Ion Beam (FIB) cross-sectioning, correct interpretation of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::df1b00c2fae4b4ef81d7455ea3b6a5c3
https://doi.org/10.31399/asm.cp.istfa2022p0201
https://doi.org/10.31399/asm.cp.istfa2022p0201
Publikováno v:
International Symposium for Testing and Failure Analysis.
Secondary ion mass spectrometry (SIMS) is a well-established method in semiconductor manufacturing process control and development for trace metal and organic contaminant detection, as well as for depth profiling of ultra-thin film stacks and total d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb2b4e6ff6bd5d0c1fe5927b16d97901
https://doi.org/10.31399/asm.cp.istfa2022p0257
https://doi.org/10.31399/asm.cp.istfa2022p0257
Autor:
Heiko Stegmann
Publikováno v:
International Symposium for Testing and Failure Analysis.
This presentation addresses topics of relevance to scanning electron microscopy, including SEM basics, electron guns, electron optics, beam-specimen interactions, signal detection, sample prep and cleanliness, low-voltage imaging, nonconductive imagi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00ecc8dc1ed46155fb07688f2d29b093
https://doi.org/10.31399/asm.cp.istfa2022tpk1
https://doi.org/10.31399/asm.cp.istfa2022tpk1
Publikováno v:
International Symposium for Testing and Failure Analysis.
In prior work, it was demonstrated that information about device turn-on can be obtained in a nanoprobing setup which involves no applied bias across the channel. This was performed on nFET logic devices in 7 nm technology and attributed to the Seebe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5687c4f0cec6aafc63dce4156abfc45b
https://doi.org/10.31399/asm.cp.istfa2022p0262
https://doi.org/10.31399/asm.cp.istfa2022p0262
Publikováno v:
2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bde57c69985af5ad4840068fdfb5b2f
https://doi.org/10.1109/ipfa55383.2022.9915756
https://doi.org/10.1109/ipfa55383.2022.9915756
Publikováno v:
2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06436340f25862fed9451c591af5b1a1
https://doi.org/10.1109/asmc54647.2022.9792505
https://doi.org/10.1109/asmc54647.2022.9792505
Autor:
Heiko Stegmann
Publikováno v:
International Symposium for Testing and Failure Analysis.
This presentation addresses topics of relevance to scanning electron microscopy, including SEM basics, electron guns, electron optics, beam-specimen interactions, signal detection, sample prep and cleanliness, low-voltage imaging, nonconductive imagi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7797215bd206304cdad4e44762997cae
https://doi.org/10.31399/asm.cp.istfa2021tpk1
https://doi.org/10.31399/asm.cp.istfa2021tpk1
Publikováno v:
Practical Metallography. 41:180-189
Transmission electron microscopy (TEM) is increasingly used for characterizing structures that are shrunk continuously, especially microelectronic devices. Conventional focused ion beam technique (FIB technique) is used routinely in the semiconductor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bda09f5ac68cde94edda9ac3200152a5
https://doi.org/10.1515/pm-2004-410406
https://doi.org/10.1515/pm-2004-410406
Autor:
H.-J. Engelmann, Y. Ritz, B. Volkmann, E. Zschech, Q. de Robiliard, Heiko Stegmann, Holger Saage
Publikováno v:
Microscopy Today. 11:22-25
TEM sample preparation using Focused Ion Beam (FIB) methods becomes more and more interesting for microscopists because the technique allows for reliable and very efficient sample preparation. The first application of TEM sample preparation by FIB-cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9b7d01dabcf3b13639bc324ae810ac4
https://doi.org/10.1017/s1551929500052457
https://doi.org/10.1017/s1551929500052457