Zobrazeno 1 - 10
of 171
pro vyhledávání: '"Heike Riel"'
Autor:
Dominique J. Kösters, Bryan A. Kortman, Irem Boybat, Elena Ferro, Sagar Dolas, Roberto Ruiz de Austri, Johan Kwisthout, Hans Hilgenkamp, Theo Rasing, Heike Riel, Abu Sebastian, Sascha Caron, Johan H. Mentink
Publikováno v:
APL Machine Learning, Vol 1, Iss 1, Pp 016101-016101-8 (2023)
The massive use of artificial neural networks (ANNs), increasingly popular in many areas of scientific computing, rapidly increases the energy consumption of modern high-performance computing systems. An appealing and possibly more sustainable altern
Externí odkaz:
https://doaj.org/article/525975579b3d4c059b95027b7ef93176
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 129-136 (2018)
As electronic devices are downsized, physical processes at the interface to electrodes may dominate and limit device performance. A crucial step towards device optimization is being able to separate such contact effects from intrinsic device properti
Externí odkaz:
https://doaj.org/article/06cca70b740b46778d29352a4bf725eb
Autor:
Peter Nirmalraj, Damien Thompson, Christos Dimitrakopoulos, Bernd Gotsmann, Dumitru Dumcenco, Andras Kis, Heike Riel
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-9 (2016)
Single-molecule-terminated scanning probes typically operate under ultra-high vacuum conditions at low temperatures. Here, the authors show that tips functionalized with C60 can image single-layer graphene and MoS2with high definition in a liquid env
Externí odkaz:
https://doaj.org/article/87cf61197d6a4cae9a9e1885bf5af557
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-6 (2016)
Thermometry using scanning probe techniques allows for the thermal imaging and characterization of devices with nanoscale resolution, however can be hindered by contact-related artefacts. Here, the authors demonstrate a thermal scanning probe approac
Externí odkaz:
https://doaj.org/article/518ba9bc0cea4211a1291593b4e4de9e
Autor:
Jason Jung, Sander G. Schellingerhout, Markus F. Ritter, Sofieke C. ten Kate, Orson A.H. van der Molen, Sem de Loijer, Marcel A. Verheijen, Heike Riel, Fabrizio Nichele, Erik P.A.M. Bakkers
Publikováno v:
Advanced Functional Materials, 32(51):2208974. Wiley-VCH Verlag
Hybrid semiconductor–superconductor nanowires are promising candidates as quantum information processing devices. The need for scalability and complex designs calls for the development of selective area growth techniques. Here, the growth of large
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1cf5a8f010408ef542af30744e72333a
http://www.scopus.com/inward/record.url?scp=85139981845&partnerID=8YFLogxK
http://www.scopus.com/inward/record.url?scp=85139981845&partnerID=8YFLogxK
Autor:
Tino Wagner, Hannes Beyer, Patrick Reissner, Philipp Mensch, Heike Riel, Bernd Gotsmann, Andreas Stemmer
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 6, Iss 1, Pp 2193-2206 (2015)
Frequency modulated Kelvin probe force microscopy (FM-KFM) is the method of choice for high resolution measurements of local surface potentials, yet on coarse topographic structures most researchers revert to amplitude modulated lift-mode techniques
Externí odkaz:
https://doaj.org/article/66af9f0e0ee14e78825913fac31e9eae
Autor:
Davide Cutaia, Kirsten E. Moselund, Mattias Borg, Heinz Schmid, Lynne Gignac, Chris M. Breslin, Siegfried Karg, Emanuele Uccelli, Heike Riel
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 3, Pp 176-183 (2015)
In this paper, we introduce p-channel InAs-Si tunnel field-effect transistors (TFETs) fabricated using selective epitaxy in nanotube templates. We demonstrate the versatility of this approach, which enables III-V nanowire integration on Si substrates
Externí odkaz:
https://doaj.org/article/a1b08e3ce7e24b2696723827b13cd2f9
Autor:
Heike Riel
Publikováno v:
ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5da64e5e7842fc80bb2e20cfbdf9eaaf
https://doi.org/10.1109/essderc55479.2022.9947181
https://doi.org/10.1109/essderc55479.2022.9947181
Autor:
Sofieke C, Ten Kate, Markus F, Ritter, Andreas, Fuhrer, Jason, Jung, Sander G, Schellingerhout, Erik P A M, Bakkers, Heike, Riel, Fabrizio, Nichele
Publikováno v:
Nano letters. 22(17)
PbTe is a semiconductor with promising properties for topological quantum computing applications. Here, we characterize electron quantum dots in PbTe nanowires selectively grown on InP. Charge stability diagrams at zero magnetic field reveal large ev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::8a111d53a2a20cd061636dc1e7a90771
https://pubmed.ncbi.nlm.nih.gov/35998346
https://pubmed.ncbi.nlm.nih.gov/35998346
Autor:
Heike Riel
Publikováno v:
Quantum Technologies 2022.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::021e9f79db643d4d7c9bd43125926902
https://doi.org/10.1117/12.2636962
https://doi.org/10.1117/12.2636962