Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Heidrun Alius"'
Autor:
Thomas Gneiting, G. Pasetti, Heidrun Alius, Hao Zou, Ramy Iskander, Alexander Steinmair, Dieu-My Ton, Pierre Tisserand, E. Seebacher, Yasser Moursy
Publikováno v:
Design, Automation & Test in Europe Conference & Exhibition (DATE) 2016 Conference
Design, Automation & Test in Europe Conference & Exhibition (DATE) 2016 Conference, Mar 2016, Dresde, Germany
DATE
Design, Automation & Test in Europe Conference & Exhibition (DATE) 2016 Conference, Mar 2016, Dresde, Germany
DATE
International audience; In this paper, a proposed methodology to identify the substrate coupling effects in smart power integrated circuits is presented. This methodology is based on a tool called AUTOMICS to extract substrate parasitic network. This
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::26965db693dd179ef3ece8bd1917c9c6
https://hal.science/hal-01293972/document
https://hal.science/hal-01293972/document
Autor:
Maher Kayal, Jean-Michel Sallese, Marie-Minerve Louërat, Alexander Steinmair, Jean-Paul Chaput, Thomas Gneiting, Ramy Iskander, Camillo Stefanucci, E. Seebacher, Yasser Moursy, Heidrun Alius, Pietro Buccela, Hao Zou
Publikováno v:
2015 20th International Mixed-Signal Testing Workshop (IMSTW)
2015 20th International Mixed-Signal Testing Workshop (IMSTW), Jun 2015, Paris, France. ⟨10.1109/IMS3TW.2015.7177885⟩
2015 20th International Mixed-Signal Testing Workshop (IMSTW), Jun 2015, Paris, France. ⟨10.1109/IMS3TW.2015.7177885⟩
International audience; Smart Power IC integrating high voltage devices with low voltage control blocks becomes more and more popular in automotive industry recently. Minority carriers injected into the substrate during switching of high power stages
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70ea882b68258db6fc18c57d6550dcf0
https://hal.sorbonne-universite.fr/hal-01230118/file/IMSTW15_submission_35.pdf
https://hal.sorbonne-universite.fr/hal-01230118/file/IMSTW15_submission_35.pdf
Autor:
Antonio Cerdeira, Ghader Darbandy, Joaquín Alvarado, Thomas Gneiting, Heidrun Alius, Benjamin Iniguez
Publikováno v:
Solid-State Electronics
Repositori Institucional de la Universitat Rovira i Virgili
Universitat Rovira i virgili (URV)
Repositori Institucional de la Universitat Rovira i Virgili
Universitat Rovira i virgili (URV)
10.1016/j.sse.2013.07.009 Direct Tunneling (DT) and Trap Assisted Tunneling (TAT) gate leakage current parameters have been extracted and verified considering automatic parameter extraction approach. The industry standard package IC-CAP is used to ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ccbe39b5a3687a0f9e555c8f733b663f
http://hdl.handle.net/20.500.11797/PC689
http://hdl.handle.net/20.500.11797/PC689
Autor:
Antonio Cerdeira, Joaquín Alvarado, Heidrun Alius, Benjamin Iniguez, Thomas Gneiting, Ghader Darbandy
Publikováno v:
Semiconductor Science and Technology. 28:055014
In this paper, automatic parameter extraction techniques of Agilent's IC-CAP modeling package are presented to extract our explicit compact model parameters. This model is developed based on a surface potential model and coded in Verilog-A. The model
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d2794b30369bb2bf476fcd076c18dd7
https://doi.org/10.1088/0268-1242/28/5/055014
https://doi.org/10.1088/0268-1242/28/5/055014
