Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Heidi Gundlach"'
Autor:
Z. Bian, A. Knorr, Heidi Gundlach, T. Rosenmayer, S. Nijsten, Alain E. Kaloyeros, R. Talevi, K. Kumar, Robert E. Geer
Publikováno v:
Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102).
Metal/barrier binary stacks have been deposited in situ on polytetrafluoroethylene (PTFE) films. The metals consist of chemical vapor deposited copper and aluminum. The barriers consist of chemical vapor deposited titanium nitride for Al, and physica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d357028518ebe8ab0b12eb4a34ed471
https://doi.org/10.1109/iitc.1998.704902
https://doi.org/10.1109/iitc.1998.704902
Autor:
Robert Talevi, Kaushik Kumar, Gregory G. Peterson, Heidi Gundlach, Andreas Knorr, Jonathan Faltermeier, Alain E. Kaloyeros
Publikováno v:
Extended Abstracts of the 1996 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddc8dee814f5449a301e63600c888fb2
https://doi.org/10.7567/ssdm.1996.a-3-1
https://doi.org/10.7567/ssdm.1996.a-3-1
Autor:
Alain E. Kaloyeros, Sumant Padiyar, Steve Martin, Zailong Bian, Heidi Gundlach, Andreas Knorr, Maarten van Gestel, Robert Talevi, Robert E. Geer, E.O. Shaffer
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:252
The integration of low-temperature plasma-promoted chemical-vapor deposition (PPCVD) of aluminum, using dimethylethylamine-alane (DMEAA) as the source precursor, with benzocyclobutene (BCB) low-k polymers has been investigated to explore the feasibil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::571b862962a3a3a1926870cfc6e8e098
https://doi.org/10.1116/1.591180
https://doi.org/10.1116/1.591180
Autor:
Gregory G. Peterson, Heidi Gundlach, James F. Loan, Andreas Knorr, Kaushik Kumar, Alain E. Kaloyeros, Jonathan Faltermeier, Robert Talevi, John J. Sullivan
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 15:1758
A low temperature plasma-promoted chemical vapor deposition (CVD) process was developed for the formation of reliable aluminum interconnect and plug metallization schemes for applications in and beyond 0.25 μm integrated chip device technology. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0aee78b459ad4a901a753485d96d15f4
https://doi.org/10.1116/1.589521
https://doi.org/10.1116/1.589521