Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Hei-Man Yau"'
Publikováno v:
AIP Advances, Vol 8, Iss 6, Pp 065321-065321-7 (2018)
The flexoelectricity in a 100 nm-thick BaTiO3 (BTO) thin film based metal/ferroelectric insulator/semiconductor (MFS) heterostructure was reported in this letter. The transverse flexoelectric coefficient of the BTO thin film in the heterojunction str
Externí odkaz:
https://doaj.org/article/dfc302f966ac4f10986b0dba180b2cbc
Autor:
Yan Chen, Chi-Man Wong, Hao Deng, Hei-Man Yau, Danyang Wang, Zhibo Yan, Haosu Luo, Helen L. W. Chan, Jiyan Dai
Publikováno v:
AIP Advances, Vol 5, Iss 3, Pp 037117-037117-6 (2015)
In this work, ferroelectric domain structures of -oriented K0.15Na0.85NbO3 single crystal are characterized. Transmission electron microscopy (TEM) observation revealed high-density of laminate domain structures in the crystal and the lattices of the
Externí odkaz:
https://doaj.org/article/642261d892794a989ec4e844dea99bee
Autor:
Ze Han Wu, Hui Chao Wang, Hon Fai Wong, Yu Kuai Liu, Sheung Mei Shamay Ng, Chi Wah Leung, Jiyan Dai, Hei Man Yau, Chun Hung Suen
Publikováno v:
ACS nano. 14(6)
Integration of transition metal dichalcogenides (TMDs) on ferromagnetic materials (FM) may yield fascinating physics and promise for electronics and spintronic applications. In this work, high-temperature anomalous Hall effect (AHE) in the TMD ZrTe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5e2093442877082cec443e4203838c37
https://pubmed.ncbi.nlm.nih.gov/32407078
https://pubmed.ncbi.nlm.nih.gov/32407078
Autor:
Wei Chang Wu, Siu-Fan Chan, Danyang Wang, Jiyan Dai, Chi-Man Wong, Sean Li, Hei-Man Yau, Chun-Hung Suen
Publikováno v:
Ultrasonics. 116:106506
Matching layer is a critical component that determines the performance of piezoelectric ultrasound transducer. For most piezoelectric materials, their acoustic impedances are significantly higher than human tissues and organs, so a tunable matching l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e759f03fc2fc821529ee23d6bb1e35b
https://doi.org/10.1016/j.ultras.2021.106506
https://doi.org/10.1016/j.ultras.2021.106506
Publikováno v:
Materials Characterization. 176:111114
Binary ferroelectric materials such as hafnium oxide have been intensively studied, which are expected to exhibit robust ferroelectricity comparable to the perovskite-based ferroelectrics at nanoscale. Here, using the combination of X-ray diffraction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dc9c30a8f026c073325fbc3e6bf6cb3
https://doi.org/10.1016/j.matchar.2021.111114
https://doi.org/10.1016/j.matchar.2021.111114
Autor:
Jiyan Dai, Hei Man Yau, Feichi Zhou, Zhi Zhang, Chunru Liu, Xiaoyan Qiu, H.-S. Philip Wong, Yang Chai, Fang Yuan, Wei Lu
Publikováno v:
ACS Nano. 11:4097-4104
Conducting bridge random access memory (CBRAM) is one of the most promising candidates for future nonvolatile memories. It is important to understand the scalability and retention of CBRAM cells to realize better memory performance. Here, we directly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41d5b907b8a73c144149a44a73521547
https://doi.org/10.1021/acsnano.7b00783
https://doi.org/10.1021/acsnano.7b00783
Autor:
Xinxin Chen, Jiyan Dai, Nicolas Onofrio, Yang Chai, Hei Man Yau, Feichi Zhou, Chun Hung Suen, Xiaodan Tang, Xiaoyuan Zhou
Publikováno v:
Nanoscale advances. 2(3)
An artificial synapse, such as a memristive electronic synapse, has caught world-wide attention due to its potential in neuromorphic computing, which may tremendously reduce computer volume and energy consumption. The introduction of layered two-dime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::83c98b071c4ac23de33b276a91e22e80
https://pubmed.ncbi.nlm.nih.gov/36133057
https://pubmed.ncbi.nlm.nih.gov/36133057
Autor:
Jiawang Hong, Yiteng Zhang, Xiaoning Jiang, Chi-Man Wong, Changgan Zeng, Hei-Man Yau, Jiyan Dai, Xinxin Chen, Peng Lv, Zheng Wen, Shujin Huang, Fan Zhang
Publikováno v:
Physical Review Letters. 122
Thin film flexoelectricity is attracting more attention because of its enhanced effect and potential application in electronic devices. Here we find that a mechanical bending induced flexoelectricity significantly modulates the electrical transport p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73815e92a02734e142bd7af2bd872cb4
https://doi.org/10.1103/physrevlett.122.257601
https://doi.org/10.1103/physrevlett.122.257601
Autor:
Fan, Zhang, Peng, Lv, Yiteng, Zhang, Shujin, Huang, Chi-Man, Wong, Hei-Man, Yau, Xinxin, Chen, Zheng, Wen, Xiaoning, Jiang, Changgan, Zeng, Jiawang, Hong, Ji-Yan, Dai
Publikováno v:
Physical review letters. 122(25)
Thin film flexoelectricity is attracting more attention because of its enhanced effect and potential application in electronic devices. Here we find that a mechanical bending induced flexoelectricity significantly modulates the electrical transport p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::81bbeb7c1b2df82f60824d6710702ad5
https://pubmed.ncbi.nlm.nih.gov/31347866
https://pubmed.ncbi.nlm.nih.gov/31347866
Autor:
Rui Xue Wang, Hei Man Yau, Chi Man Wong, Xiao Yan Qiu, Yi Yang Zhang, Yan Chen, Hua Xing Zhu, Jin Qian Huo, Jiyan Dai
Publikováno v:
Materials Science Forum. 847:131-136
Oxygen-rich polycrystalline NiOx films were prepared by means of magnetron sputtering. Thickness-dependent bipolar resistive switching behaviors revealed that the 20 nm-thick NiOx film presented a clockwise current-voltage loop, while the 60 nm-thick
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f7b477eb1f24bedfa7a1ee79a76f34a
https://doi.org/10.4028/www.scientific.net/msf.847.131
https://doi.org/10.4028/www.scientific.net/msf.847.131