Zobrazeno 1 - 10
of 582
pro vyhledávání: '"Hei Wong"'
Autor:
Hei Wong
Publikováno v:
Nanomaterials, Vol 14, Iss 11, p 897 (2024)
As silicon CMOS devices approach their physical and technological miniaturization limits, Moore’s Law is expected to persist for several more cycles, thanks to innovative, more compact layout structures [...]
Externí odkaz:
https://doaj.org/article/0786fc4c1ce84a6cb34b42a5c3e67379
Publikováno v:
Nanomaterials, Vol 14, Iss 4, p 386 (2024)
Contact scaling is a major challenge in nano complementary metal–oxide–semiconductor (CMOS) technology, as the surface roughness, contact size, film thicknesses, and undoped substrate become more problematic as the technology shrinks to the nanom
Externí odkaz:
https://doaj.org/article/08aa64a40a48407dbe42869896c3e127
Autor:
Hei Wong, Kuniyuki Kakushima
Publikováno v:
Nanomaterials, Vol 13, Iss 3, p 411 (2023)
This work reports, for the first time, the phenomenon of lateral Poole–Frenkel current conduction along the dielectric/Si interface of a silicon nanowire metal-oxide semiconductor (MOS) transistor. This discovery has a great impact on the study of
Externí odkaz:
https://doaj.org/article/3563f6ddb5d0472b8746f331afd03029
Publikováno v:
Results in Physics, Vol 29, Iss , Pp 104744- (2021)
Distinct characteristics and yet adverse in some cases have been widely reported in the graphene/silicon Schottky junction under DC biasing, for biological and chemical sensing, or as a photodetector. The explanations to these observations are often
Externí odkaz:
https://doaj.org/article/bac73952edd7483d97a2a288544e6b59
Autor:
Hei Wong
Publikováno v:
Nanomaterials, Vol 12, Iss 23, p 4245 (2022)
Whether from a device physics, fabrication technology, or process economics point of view, the practice of downsizing silicon-based CMOS devices will soon end [...]
Externí odkaz:
https://doaj.org/article/7678de04981c476d9e10ec48d1a61705
Autor:
M Masudur Rahman, Hiroto Miwa, Yinglian Xiao, Yeong Yeh Lee, Tadayuki Oshima, Chun En Chua, Guan Sen Kew, Scott Wong, Hui Xing Lau, Tze Liang Loh, Shien Lung Ooi, Uday C Ghoshal, Ari F Syam, Niandi Tan, Jin-Song Liu, Fang Lu, Chien-Lin Chen, Ruter M Maralit, Yong-Sung Kim, Kewin Tien Ho Siah, Hao Gui, Junxiong Pang, Alla Demutska, Sabrina Quek, Evelyn Xiu Ling Loo, En Xian Sarah Low, Emily C W Hung, Hei Wong, Cynthia K Y Cheung
Publikováno v:
BMJ Open, Vol 11, Iss 8 (2021)
Introduction Regardless of having effective vaccines against COVID-19, containment measures such as enhanced physical distancing and good practice of personal hygiene remain the mainstay of controlling the COVID-19 pandemic. Countries across Asia hav
Externí odkaz:
https://doaj.org/article/dacaa2799f284ec1b88c32dfe1a9b463
Autor:
Hei Wong, Kuniyuki Kakushima
Publikováno v:
Nanomaterials, Vol 12, Iss 10, p 1739 (2022)
This work performs a detailed comparison of the channel width folding effectiveness of the FinFET, vertically stacked nanosheet transistor (VNSFET), and vertically stacked nanowire transistor (VNWFET) under the constraints of the same vertical (fin)
Externí odkaz:
https://doaj.org/article/a08e004d8f064f328a529635ce241e8e
Publikováno v:
Nanomaterials, Vol 11, Iss 8, p 2118 (2021)
As CMOS devices are scaled down to a nanoscale range, characteristic variability has become a critical issue for yield and performance control of gigascale integrated circuit manufacturing. Nanoscale in size, few monolayers thick, and less thermally
Externí odkaz:
https://doaj.org/article/ec0a8aa83ec54a6cbc36ff3e78ac22b9
Publikováno v:
Advances in Condensed Matter Physics, Vol 2015 (2015)
A physically based subthreshold current model for silicon nanowire transistors working in the ballistic regime is developed. Based on the electric potential distribution obtained from a 2D Poisson equation and by performing some perturbation approxim
Externí odkaz:
https://doaj.org/article/269ab832ca914a9aa76c262338963392
Publikováno v:
AIP Advances, Vol 4, Iss 11, Pp 117117-117117-9 (2014)
This work presents a detailed study on the chemical composition and bond structures of CeO2/La2O3 stacked gate dielectrics based on x-ray photoelectron spectroscopy (XPS) measurements at different depths. The chemical bonding structures in the interf
Externí odkaz:
https://doaj.org/article/fadab961566743e0a574b5957bcd029e