Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Hei Kam"'
Autor:
Tsegereda K. Esatu, Hei Kam, Lars P. Tatum, Xiaoer Hu, Urmita Sikder, Sergio Almeida, Junqiao Wu, Tsu-Jae King Liu
Publikováno v:
2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS).
Publikováno v:
2017 Fifth Berkeley Symposium on Energy Efficient Electronic Systems & Steep Transistors Workshop (E3S).
Micro-electro-mechanical (MEM) switches show promise for ultra-low-power computing since they can operate with negligible subthreshold leakage current. A principal challenge for MEM switch design is to achieve low pull-in voltage (V pi ) for low-powe
Publikováno v:
IEEE Transactions on Electron Devices. 59:326-334
Many steeply switching logic devices have recently been proposed to overcome the energy efficiency limitations of CMOS technology. In this paper, circuit-level energy-performance analysis is used to derive the design requirements for these alternativ
Publikováno v:
IEEE Transactions on Electron Devices. 58:236-250
Microelectromechanical relays have recently been proposed for ultra-low-power digital logic because their nearly ideal switching behavior can potentially enable reductions in supply voltage (Vdd) and, hence, energy per operation beyond the limits of
Autor:
Cheng C. Wang, Jaeseok Jeon, Fred F. Chen, Dejan Markovic, Elad Alon, Abhinav Gupta, Matthew Spencer, Hei Kam, Hossein Fariborzi, Rhesa Nathanael, Vladimir Stojanovic, Tiehui Liu, Vincent Pott
Publikováno v:
IEEE Journal of Solid-State Circuits. 46:308-320
This work presents measured results from test chips containing circuits implemented with micro-electro-mechanical (MEM) relays. The relay circuits designed on these test chips illustrate a range of important functions necessary for the implementation
Publikováno v:
Proceedings of the IEEE. 98:2076-2094
Power density has grown to be the dominant challenge for continued complementary metal-oxide-semiconductor (CMOS) technology scaling. Together with recent improvements in microrelay design and process technology, this has led to renewed interest in m
Autor:
Hei Kam, Tiehui Liu
Publikováno v:
IEEE Transactions on Electron Devices. 56:3072-3082
The Euler-Bernoulli beam equation is solved simultaneously with the Poisson equation in order to accurately model the switching behavior of nanoelectromechanical field-effect transistors (NEMFETs). Using this approach, the shape of the movable gate e
This volume describes the design of relay-based circuit systems from device fabrication to circuit micro-architectures. This book is ideal for both device engineers as well as circuit system designers, and highlights the importance of co-design acros
Publikováno v:
Microsystems and Nanosystems ISBN: 9781493921270
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9b2ee64abb0ed1b2cf2996d1d110710
https://doi.org/10.1007/978-1-4939-2128-7
https://doi.org/10.1007/978-1-4939-2128-7
Autor:
K. Fischer, Pulkit Jain, Sell Bernhard, P. Plekhanov, Swaminathan Sivakumar, S. Rajamani, R. James, Mark Y. Liu, C. Kenyon, L. Neiberg, Pete Smith, J. Wiedemer, M. Haran, M. Prince, Kevin Zhang, A. Bowonder, S. Morarka, R. Mehandru, B. Song, M. Agostinelli, Q. Fu, Y. Luo, W. Han, M. Heckscher, R. Grover, R. Patel, V. Chikarmane, S. Akbar, S. Chouksey, P. Patel, D. Hanken, I. Jin, L. Pipes, C. Parker, J. Sandford, M. Giles, Paul A. Packan, Tahir Ghani, A. Paliwal, E. Haralson, M. Bost, K. Tone, Sanjay Natarajan, M. Yang, Eric Karl, Hei Kam, R. Jhaveri, R. Heussner, T. Troeger, A. Dasgupta, S. Govindaraju, C. Pelto
Publikováno v:
2014 IEEE International Electron Devices Meeting.
A 14nm logic technology using 2nd-generation FinFET transistors with a novel subfin doping technique, self-aligned double patterning (SADP) for critical patterning layers, and air-gapped interconnects at performance-critical layers is described. The