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Autor:
Fontana, Yannik, Corfdir, Pierre, Van Hattem, Barbara, Russo-Averchi, Eleonora, Heiss, Martin, Sonderegger, Samuel, Magen, Cesar, Arbiol, Jordi, Phillips, Richard T., Morral, Anna Fontcuberta i
Publikováno v:
Phys. Rev. B, 90 (2014) 075307
Quantum-dot-in-nanowire systems constitute building blocks for advanced photonics and sensing applications. The electronic symmetry of the emitters impacts their function capabilities. Here, we study the fine structure of gallium-rich quantum dots ne
Externí odkaz:
http://arxiv.org/abs/1406.0163
Autor:
Casadei, Alberto, Schwender, Jil, Russo-Averchi, Eleonora, Rüffer, Daniel, Heiss, Martin, Alarcó-Lladó, Esther, Jabeen, Fauzia, Ramezani, Mohammad, Nielsch, Kornelius, Morral, Anna Fontcuberta I
The resistivity and the mobility of Carbon doped GaAs nanowires have been studied for different doping concentrations. Surface effects have been evaluated by comparing upassivated with passivated nanowires. We directly see the influence of the surfac
Externí odkaz:
http://arxiv.org/abs/1304.5891
Autor:
Krogstrup, Peter, Jørgensen, Henrik Ingerslev, Heiss, Martin, Demichel, Olivier, Holm, Jeppe V., Aagesen, Martin, Nygard, Jesper, Morral, Anna Fontcuberta i
Publikováno v:
Nature Photonics 7, 306-310 (2013)
Light management is of great importance to photovoltaic cells, as it determines the fraction of incident light entering the device. An optimal pn-junction combined with an optimal light absorption can lead to a solar cell efficiency above the Shockle
Externí odkaz:
http://arxiv.org/abs/1301.1068
Autor:
Casadei, Alberto, Krogstrup, Peter, Heiss, Martin, Röhr, Jason A., Colombo, Carlo, Ruelle, Thibaud, Upadhyay, Shivendra, Sørensen, Claus B., Nygård, Jesper, Morral, Anna Fontcuberta i
Publikováno v:
Appl. Phys. Lett. 102, 013117 (2013)
The incorporation paths of Be in GaAs nanowires grown by the Ga-assisted method in molecular beam epitaxy has been investigated by electrical measurements of nanowires with different doping profiles. We find that Be atoms incorporate preferentially v
Externí odkaz:
http://arxiv.org/abs/1210.1670
Autor:
Ketterer, Bernt, Heiss, Martin, Livrozet, Marie J., Reiger, Elisabeth, Morral, Anna Fontcuberta i
GaAs nanowires with a 100% wurtzite structure are synthesized by the vapor-liquid-solid method in a molecular beam epitaxy system, using gold as a catalyst. We use resonant Raman spectroscopy and photoluminescence to determine the position of the cry
Externí odkaz:
http://arxiv.org/abs/1102.2306
Autor:
Heiß, Martin, Ketterer, Bernt, Uccelli, Emanuele, Morante, Joan Ramon, Arbiol, Jordi, Morral, Anna Fontcuberta i
Growth of GaAs and InGaAs nanowires by the group-III assisted Molecular Beam Epitaxy growth method is studied in dependence of growth temperature, with the objective of maximizing the indium incorporation. Nanowire growth was achieved for growth temp
Externí odkaz:
http://arxiv.org/abs/1011.5152
Autor:
Heiß, Martin, Conesa-Boj, Sonia, Ren, Jun, Tseng, Hsiang-Han, Gali, Adam, Rudolph, Andreas, Uccelli, Emanuele, Peiro, Francesca, Morante, Joan Ramon, Schuh, Dieter, Reiger, Elisabeth, Kaxiras, Efthimios, Arbiol, Jordi, Morral, Anna Fontcuberta i
A novel method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are investigated by p
Externí odkaz:
http://arxiv.org/abs/1011.5165
Autor:
Heiss, Martin
Diese Dissertation beschäftigt sich mit der Mängelhaftung beim Unternehmenskauf in der Digitalwirtschaft. Dabei wird auf die Gewährleistungsregelungen gem §§ 922 ff ABGB im Zusammenhang mit einem Mangel eingegangen, welcher dann vorliegt, wenn d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3361::d159582bbab961994d51359eda5c2fd6
Autor:
Heiß, Martin
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Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::309001ceb32587f98427aef50bb1ac40