Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Hehe Gong"'
Autor:
Feng Zhou, Hehe Gong, Ming Xiao, Yunwei Ma, Zhengpeng Wang, Xinxin Yu, Li Li, Lan Fu, Hark Hoe Tan, Yi Yang, Fang-Fang Ren, Shulin Gu, Youdou Zheng, Hai Lu, Rong Zhang, Yuhao Zhang, Jiandong Ye
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-10 (2023)
Abstract Avalanche and surge robustness involve fundamental carrier dynamics under high electric field and current density. They are also prerequisites of any power device to survive common overvoltage and overcurrent stresses in power electronics ap
Externí odkaz:
https://doaj.org/article/902648bfca33430e8df0182cd8faa5a4
Autor:
Hehe Gong, Zhengpeng Wang, Xinxin Yu, Fangfang Ren, Yi Yang, Yuanjie Lv, Zhihong Feng, Shulin Gu, Rong Zhang, Youdou Zheng, Jiandong Ye
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 1166-1171 (2021)
In this work, vertical NiO/Ga2O3 heterojunction diodes (HJDs) integrated with SiNx/Al2O3 double-layered insulating field plate (FP) structures have been demonstrated. With the additional post-annealing, the resultant diode exhibits a decreased differ
Externí odkaz:
https://doaj.org/article/0a00bba89c2148ceb1be4a10b2d46a99
Autor:
Genquan Han, Yibo Wang, Wenhui Xu, Hehe Gong, Tiangui You, Jinggang Hao, Xin Ou, Jiandong Ye, Rong Zhang, Yue Hao
Publikováno v:
Chinese Science Bulletin. 68:1741-1752
Autor:
Hehe Gong, Feng Zhou, Xinxin Yu, Weizong Xu, Fang-Fang Ren, Shulin Gu, Hai Lu, Jiandong Ye, Rong Zhang
Publikováno v:
IEEE Electron Device Letters. 43:773-776
Autor:
Rong Zhang, Shaobo Dun, Hehe Gong, Yuan gang Wang, Jiandong Ye, Han Tingting, Hongyu Liu, Zhou Xingye, Aimin Bu, Shujun Cai, Zhihong Feng, Yuanjie Lv, Shixiong Liang, Xing-Chang Fu
Publikováno v:
IEEE Transactions on Power Electronics. 37:3743-3746
In this letter, high-performance p-NiO/-Ga2O3 heterojunction diodes (HJDs) with composite terminal structures, a p-NiO junction termination extension (JTE), and a small-angle beveled field plate (BFP), are demonstrated. By implementing a p-NiO JTE st
Autor:
Yibo Wang, Hehe Gong, Xiaole Jia, Jiandong Ye, Yan Liu, Haodong Hu, Xin Ou, Xiaohua Ma, Rong Zhang, Yue Hao, Genquan Han
Publikováno v:
IEEE Transactions on Electron Devices. 69:2203-2209
Autor:
Xinyu Sun, Zhengpeng Wang, Hehe Gong, Xuanhu Chen, Yijun Zhang, Zhiyuan Wang, Xinxin Yu, Fangfang Ren, Hai Lu, Shulin Gu, Youdou Zheng, Rong Zhang, Jiandong Ye
Publikováno v:
IEEE Electron Device Letters. 43:541-544
Autor:
Yimeng Li, Peng Chen, Xiufang Chen, Hehe Gong, Xiaobo Hu, Yan Peng, Xiangang Xu, Zili Xie, Xiangqian Xiu, Dunjun Chen, Jiandong Ye, Ping Han, Yi Shi, Rong Zhang, Youdou Zheng
Publikováno v:
ACS Applied Electronic Materials. 4:1807-1814
Autor:
Zhengpeng Wang, Hehe Gong, Chenxu Meng, Xinxin Yu, Xinyu Sun, Chongde Zhang, Xiaoli Ji, Fangfang Ren, Shulin Gu, Youdou Zheng, Rong Zhang, Jiandong Ye
Publikováno v:
IEEE Transactions on Electron Devices. 69:981-987
Autor:
Yi Yang, Feng Zhou, Jiandong Ye, Shulin Gu, Yang Xu, Fang-Fang Ren, Hehe Gong, Rong Zhang, Xinxin Yu, Hai Lu, Youdou Zheng, Weizong Xu
Publikováno v:
IEEE Transactions on Power Electronics. 37:1223-1227
The technical progress of Ga2O3 power diodes is now stuck at a critical point where a lack of performance evaluation and reliability validation at the system-level applications seriously limits their further development and even future commercializat