Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Heebum Hong"'
Autor:
Yuri Yasuda-Masuoka, Jaehun Jeong, Kihwang Son, SeungWook Lee, Seulki Park, Youngho Lee, Ju Youn Kim, Jaeho Lee, Moongi Cho, Sihyung Lee, Soohun Hong, Heebum Hong, Younghun Jung, Changkeun Yoon, Yonghyun Ko, Kyunghoon Jung, Taehun Myung, Jong Mil Youn, Gitae Jeong
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6ed776a19715b49489ce62a2a6dafe1
https://doi.org/10.1109/iedm19574.2021.9720656
https://doi.org/10.1109/iedm19574.2021.9720656
Autor:
Young-Gun Ko, Jeongmin Choi, Y. Yasuda-Masuoka, Kyunghoon Jung, Heebum Hong, Sungil Jo, Jae-Hun Jeong, Minseong Lee, Young-Ho Lee, Sihyung Lee, Ju Youn Kim, Gitae Jeong, Kihwang Son, Ho Lee, Byungha Choi, Hyung-Jong Lee, Chunghwan Shin, Jong Mil Youn, Sung Won Kim, Jae-Chul Kim
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
In this paper, we demonstrate state of the art 5nm technology (5LPE) having co-optimization process for Dual CPP (Critical Poly-Pitch) technology to maximize Product Power-Performance-Area by separating both high speed and low power blocks. As a resu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0efae1aa35f1f41261d412f146b43f5
https://doi.org/10.1109/iedm13553.2020.9371958
https://doi.org/10.1109/iedm13553.2020.9371958
Autor:
Nak-Jin Son, Yongmin Park, Hwa-Sung Rhee, Sung Gun Kang, Sung-il Cho, Kyung-Hwan Yeo, Eun-Cheol Lee, Yun-Ki Choi, Jong Shik Yoon, Heebum Hong, Jeong-Hoon Ahn, Dongwoo Kim, Il-Ryong Kim, Jungtae Kim, Jong Mil Youn, Jae-Hun Jeong
Publikováno v:
2018 IEEE Symposium on VLSI Technology.
8LPP logic platform technology supports mobile and high-performance and lower power application especially for mobile, artificial intelligence (AI), and cryptocurrency devices. 8LPP is employing the evolutionary generation of bulk FinFET FEOL and 44n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40b1037773b5c94d6df5444162cc2a3a
https://doi.org/10.1109/vlsit.2018.8510673
https://doi.org/10.1109/vlsit.2018.8510673
Publikováno v:
2011 International Reliability Physics Symposium.
We present an optimal method to characterize and mitigate SRAM Vmin shift during Accelerated High Temperature Operating Life (AHTOL) stress test while taking PG BTI effect into account. Prior work has reported that changes in SRAM V MIN during AHTOL
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b129a94e2cef22dfdf9a49961143ca41
https://doi.org/10.1109/irps.2011.5784460
https://doi.org/10.1109/irps.2011.5784460