Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Hee-hwan Choe"'
Publikováno v:
Applied Science and Convergence Technology. 29:62-66
Publikováno v:
Advances in Materials Science and Engineering, Vol 2014 (2014)
The characteristics of the dry etching of SiNx:H thin films for display devices using SF6/O2 and NF3/O2 were investigated using a dual-frequency capacitively coupled plasma reactive ion etching (CCP-RIE) system. The investigation was carried out by v
Externí odkaz:
https://doaj.org/article/209740fb72e242f5a665aa71666c5916
Publikováno v:
Plasma Science and Technology. 16:758-766
Spatial distributions of plasma parameters such as electron density, electron temperature and electric potential were investigated using a commercial simulation software (COMSOLTM) to predict the effects of antenna configuration in a large area induc
Autor:
Seon-Geun, Oh, Young-Jun, Lee, Jae-Hong, Jeon, Young-Jin, Kim, Jong-Hyun, Seo, Hee-Hwan, Choe
Publikováno v:
Journal of nanoscience and nanotechnology. 15(11)
As research and development of high-performance devices are becoming increasingly important in the flat panel display industry, new structures and processes are essential to improve the performance of the TFT backplane. Also, high-density plasma syst
Publikováno v:
Journal of the Korean Physical Society. 52:300-307
Publikováno v:
Solid State Phenomena. :423-426
In order to improve long term stability of a-Si:H TFT for AM-OLED application a new driving method compensating Vth shift requires a new device structure of which hole injection is enhanced. ITO film was investigated for the hole injection material b
Publikováno v:
Solid State Phenomena. :387-390
Amorphous silicon thin films were deposited below 160oC on PES plastic films using PECVD. After thin film deposition using PECVD, thin film failures such as film delamination and cracking often occurred. For successful growth of thin films (about 200
Autor:
O Dae Kwon, Yong-Hyeon Shin, Dae Jin Seong, Kang Woong Lee, Su Jin Yoo, Jung-Hyung Kim, Jae-Hong Jeon, Jong Hyun Seo, Hee Hwan Choe
Publikováno v:
Solid State Phenomena. :327-330
V-I probe measurement is usually used for a method of fault detection of plasma discharges. In this report, a method for monitoring plasma parameter using V-I probe is proposed. Data from the V-I probe were analyzed to estimate the plasma parameters,
Autor:
Sang-Gab Kim, Hee Hwan Choe
Publikováno v:
Semiconductor Science and Technology. 19:839-845
The n+ etching process is investigated for the fabrication of TFT-LCD (thin film transistor liquid crystal display) deposited with low resistance data lines of Mo/Al/Mo. Problems of consumption of the upper Mo layer and contamination of the channel a
Autor:
Byoung-Kwan Song, Young-Joon Lee, Sang-Gab Kim, Hee-hwan Choe, Moon-Pyo Hong, Geun Young Yeom, Sang-Duk Park
Publikováno v:
Japanese Journal of Applied Physics. 42:286-290
In this study, Ag thin films deposited on glass were etched using inductively coupled Cl2-based plasmas and the effects of various Cl2-based gas mixtures on the formation of reactive byproducts affecting Ag etching were investigated. When Cl2-based g