Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Hee-Youl Lim"'
Autor:
Tae-Seung Eom, Choon-Ky Kang, Seung-Hyun Hwang, Jeongsu Park, Noh-Jung Kwak, Sungki Park, Yoon-Jung Ryu, Hong-Ik Kim, Ho-Hyuk Lee, Hee-Youl Lim
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IV.
In this paper, we will discuss patterning challenges of EUV lithography to apply 1xnm node DRAM. EUV lithography is positioned on essential stage because development stage for DRAM is going down sub-20nm technology node. It is time to decide how to m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67dfb9a0a3d39875e02fd5eb6165d5fd
https://doi.org/10.1117/12.2011687
https://doi.org/10.1117/12.2011687
Autor:
Hee-Youl Lim, Jun-Taek Park, Tae-Seung Eom, Eun-Ha Lee, Seung-Hyun Hwang, Sunyoung Koo, Sungki Park, Eun-Kyoung Shin, Yoon-Jung Ryu, Hye-Jin Shin, Noh-Jung Kwak, Kyu-Tae Sun, Sarohan Park
Publikováno v:
SPIE Proceedings.
In this paper, we will present applications of MoSi-based binary intensity mask for sub-40nm DRAM with hyper-NA immersion scanner which has been the main stream of DRAM lithography. Some technical issues will be reported for polarized illumination an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54ff76899e922ee64919b860836b640f
https://doi.org/10.1117/12.846728
https://doi.org/10.1117/12.846728
Autor:
Yoon-Jung Ryu, Hye-Jin Shin, Tae-Seung Eom, Eun-Ha Lee, Kyu-Tae Sun, Seung-Hyun Hwang, Sarohan Park, Sungki Park, Noh-Jung Kwak, Eun-Kyoung Shin, Hee-Youl Lim
Publikováno v:
SPIE Proceedings.
In recent years, DRAM technology node has shrunk below to 40nm HP (Half Pitch) patterning with significant progresses of hyper NA (Numerical Aperture) immersion lithography system and process development. Especially, the development of DPT (Double Pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::670e4ba64369327cb491b79fe55576ae
https://doi.org/10.1117/12.846489
https://doi.org/10.1117/12.846489
Autor:
Lee Sung-Gu, Sarohan Park, Seung-Chan Moon, Hee-Youl Lim, Cheol-Kyu Bok, Kyo-Young Jang, Tae-Hwan Kim, Jaeheon Kim
Publikováno v:
SPIE Proceedings.
In this paper, we will present experimental results on sub-40nm node patterning of DRAM and some technical issues for capping freezing in simplified double patterning lithography. Lithography resolution limit of single pattern is 40nm in ArF immersio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::976367465c713c54d9f8fe77602a8d2a
https://doi.org/10.1117/12.804657
https://doi.org/10.1117/12.804657
Autor:
Keundo Ban, Sarohan Park, Hyunsook Chun, Seung-Chan Moon, Cheol-Kyu Bok, Hee-Youl Lim, Junggun Heo, Jung-Hyun Kang
Publikováno v:
SPIE Proceedings.
ArF Immersion lithography is expected to be a production-worthy technology for sub-60nm DRAM. It gives wider process window and better CD uniformity at the cost of defects and overlay accuracy. It is generally mentioned that immersion defects are gen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8796f7e99a1292dd11867e372397510e
https://doi.org/10.1117/12.712029
https://doi.org/10.1117/12.712029
Autor:
Sung-Yoon Cho, Keundo Ban, Eung-Kil Kang, Seung-Chan Moon, Jin-Ki Jung, Hyeong-Soo Kim, Seo-Min Kim, Chang-Moon Lim, Young-Sun Hwang, Hee-Youl Lim, Jaeseung Choi
Publikováno v:
SPIE Proceedings.
Double patterning lithography is very fascinating way of lithography which is capable of pushing down the k1 limit below 0.25. By using double patterning lithography, we can delineate the pattern beyond resolution capability. Target pattern is decomp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e69dc42ac5aa6e3bf4c90c7a3383f5c1
https://doi.org/10.1117/12.656187
https://doi.org/10.1117/12.656187