Zobrazeno 1 - 10
of 51
pro vyhledávání: '"Hee-Hwan Ji"'
Autor:
Hee-Hwan Ji, Hi-Deok Lee, Du-Eung Kim, Younghwan Son, Han-Soo Joo, Ook-Sang Yoo, Tae-Gyu Goo, In-Shik Han, Chang-Ki Baek, Won-Ho Choi
Publikováno v:
IEEE Transactions on Nanotechnology. 8:654-658
This paper presents the depth profile of oxide trap density, extracted from the dual gate processed thermally grown oxide in NO ambient and remote plasma nitrided oxides by using multifrequency and multitemperature charge pumping technique in conjunc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::018d04d9102572cff517cf0e37ce9202
https://doi.org/10.1109/tnano.2008.2009760
https://doi.org/10.1109/tnano.2008.2009760
Autor:
Heui-Seung Lee, Kyong-Jin Hwang, Sung-Hyung Park, Jung-Eun Lim, In-Shik Han, Ook-Sang You, Won-Ho Choi, Hee-Hwan Ji, Hi-Deok Lee, Dae-Byung Kim
Publikováno v:
IEEE Transactions on Electron Devices. 55:1352-1358
This paper shows that dc device performance and reliability characteristics of CMOSFETs do not have the same dependence on the film stress of contact etch stopping layers (CESLs) in strained silicon technology. Two kinds of CESLs, namely, plasma-enha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ee4fc53cd53673f05433baec5a564b9
https://doi.org/10.1109/ted.2008.921061
https://doi.org/10.1109/ted.2008.921061
Autor:
Dae-Byung Kim, Young-Seok Kang, Heui-Seung Lee, In-Shik Han, Min-Ki Na, Tae-Gyu Goo, Ook-Sang Yoo, Yong-Goo Kim, Hee-Hwan Ji, Hi-Deok Lee, Won-Ho Choi, Sung-Hyung Park
Publikováno v:
Japanese Journal of Applied Physics. 47:2628-2632
In this paper, we investigated the device performance and negative bias temperature instability (NBTI) degradation for thermally nitrided oxide (TNO) and plasma nitrided oxide (PNO) in nanoscale p-channel metal oxide semiconductor field effect transi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd883dba4e7609bb6728598682289aea
https://doi.org/10.1143/jjap.47.2628
https://doi.org/10.1143/jjap.47.2628
Autor:
Jang-Gn Yun, Soon-Young Oh, Yong-Goo Kim, Yong-Jin Kim, Heui-Seung Lee, Han-Seob Cha, Ui-Sik Kim, Hee-Hwan Ji, Hi-Deok Lee, Sung-Hyung Park, Bin-Feng Huang, Sang-Bum Hu, Dae-Byung Kim, Jeong-Gun Lee
Publikováno v:
IEEE Transactions On Nanotechnology. 6:485-491
In this paper, novel Ni germanosilicide technology using NiPt alloy and Co overlayer has been proposed. Using the Co overlayer after NiPt deposition on Si1-xGex, the formation temperature of low resistive Ni germanosilicide is lowered with high therm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10b16acd0c9d15f4ab8fa6febef2f673
https://doi.org/10.1109/tnano.2007.897083
https://doi.org/10.1109/tnano.2007.897083
Autor:
Han-Seob Cha, Ying-Ying Zhang, J.-S. Wang, Y.-C. Kim, Soon-Young Oh, Jang-Gn Yun, Zhun Zhong, Soon-Yen Jung, Won-Jae Lee, Hee-Hwan Ji, Yong-Goo Kim, Hi-Deok Lee
Publikováno v:
IEEE Transactions On Nanotechnology. 6:431-437
In this paper, thermally stable Ni-germanosilicide technology utilizing Ni-Pd alloy and Co/TiN capping layer (Ni-Pd/Co/TiN tri-layer) is proposed for high performance strained-Si CMOS technology. The proposed Ni-germanosilicide technology exhibits lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74feb309d29bb293299868b492f69908
https://doi.org/10.1109/tnano.2007.897084
https://doi.org/10.1109/tnano.2007.897084
Autor:
Sung-Hyung Park, Heui-Seung Lee, Hee-Hwan Ji, Hi-Deok Lee, Tae-Gyu Goo, Ook-Sang You, In-Shik Han, Won-Ho Choi, Young-Seok Kang, Dae-Byung Kim
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 20:569-574
In this paper, the reliability (NBTI degradation: ) and device characteristic of nano-scale PMOSFET with plasma nitrided oxide (PNO) is characterized in depth by comparing those with thermally nitrided oxide (TNO). PNO case shows the reduction of gat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3854d705ab96c3bb172d8b865accbc09
https://doi.org/10.4313/jkem.2007.20.7.569
https://doi.org/10.4313/jkem.2007.20.7.569
Autor:
Yong-Jin Kim, Soon Young Oh, Jang Gn Yun, Jin Suk Wang, Chel-Jong Choi, Hee Hwan Ji, Hi Deok Lee, Won-Jae Lee
Publikováno v:
Solid State Phenomena. :1261-1264
In this paper, the electrical properties of NiSi have been characterized using multi capping layer structure for nano CMOS application. We have investigated the formation and thermal stability of Ni silicide using Ni, Ti and TiN capping layers (Ti/Ni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::036e8ab4a78988c5dd153e9874b9eba3
https://doi.org/10.4028/www.scientific.net/ssp.121-123.1261
https://doi.org/10.4028/www.scientific.net/ssp.121-123.1261
Autor:
Hee Hwan Ji, Hee Seung Lee, Dae Byung Kim, Seong Hyung Park, Sung-Bo Hwang, Kyung-Min Kim, Chang Young Lee, Young Seok Kang, Ihl Hyun Cho, Hi Deok Lee, In Shik Han, Jeong-Gun Lee, Sang-Young Kim
Publikováno v:
Solid State Phenomena. :595-598
In this paper, it is presented that flicker (1/f) noise of ultra thin gate oxide can be improved by initial oxidation and subsequent plasma nitridation(PN). PN which raises Nitrogen peak upward from the Si/Oxide interface to gate polysilicon/Oxide in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c271f5c8165472cc28598dc4484b53eb
https://doi.org/10.4028/www.scientific.net/ssp.121-123.595
https://doi.org/10.4028/www.scientific.net/ssp.121-123.595
Autor:
Won-Jae Lee, Hi Deok Lee, Agchbayar Tuya, Han Seob Cha, Hee Hwan Ji, Kil Jin Han, Jang Gn Yun, Do−Woo Kim, Yong Jin Kim, Yeong−Cheul Kim, Jin Suk Wang, Yoo Jeong Cho, Soon Young Oh
Publikováno v:
Japanese Journal of Applied Physics. 45:2980-2983
In this study, a highly thermal immune Ni–germanosilicide utilizing a 1%-nitrogen-doped nickel and a Co/TiN double capping layer is proposed for nano-scale complementary metal oxide semiconductor field effect transistors (CMOSFETs). It is shown tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a60d0b830eb5ddfb7bcef5ba68427478
https://doi.org/10.1143/jjap.45.2980
https://doi.org/10.1143/jjap.45.2980
Autor:
Han Seob Cha, Hee Hwan Ji, Jang Gn Yun, Soon Young Oh, Bin Feng Huang, Yong Jin Kim, Sang Bum Huh, Hi Deok Lee, Jin Suk Wang, Ui Sik Kim
Publikováno v:
IEICE Transactions on Electronics. :651-655
A novel NiSi technology with bi-layer Co/TiN structure as a capping layer is proposed for the highly thermal immune Ni Silicide technology. Much better thermal immunity of Ni Silicide was certified up to 700°C, 30 min post silicidation furnace annea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24430248e0fbbff87cd5198fc2a147eb
https://doi.org/10.1093/ietele/e88-c.4.651
https://doi.org/10.1093/ietele/e88-c.4.651