Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Hee-Bom Kim"'
Autor:
Hyun-Gyu Kang, Dong Hyeon Kwon, Tae-Gon Kim, Jin-Ho Ahn, Byung-Hoon Lee, Jin-Goo Park, Hwan Seok Seo, Hee Bom Kim
Publikováno v:
Photomask Technology 2022.
Publikováno v:
Microelectronic Engineering. 181:1-9
The impact of non-ideal absorber sidewall angle (SWA) has been a serious problem as target pattern sizes have been reduced. During mask fabrication, it is difficult to obtain an absorber sidewall angle of 90° due to the imperfect etching process. Fu
Autor:
Junghwan Moon, Muyoung Kim, Maenghyo Cho, Hee-Bom Kim, Byunghoon Lee, Joonmyung Choi, Changyoung Jeong
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IX.
Semiconductor manufacturing industry has reduced the size of wafer for enhanced productivity and performance, and Extreme Ultraviolet (EUV) light source is considered as a promising solution for downsizing. A series of EUV lithography procedures cont
Autor:
Mun Ja Kim, Peter D. Buck, Hee-Bom Kim, Ji Hoon Na, Donggun Lee, Hwan-Seok Seo, Emily E. Gallagher, Chan-Uk Jeon, Chang Young Jeong, Sung-Won Kwon
Publikováno v:
Photomask Technology.
Currently, we are supplying defect-free EUV mask for device development. This was one of the biggest challenges in the implementation of EUV lithography for high volume manufacturing (HVM). It became possible to hide all multi-layer defects by using
Autor:
Jihoon Na, Donggun Lee, Jungyoup Kim, Chan-Uk Jeon, Hee-Bom Kim, Changhwan Do, Hong-seok Sim, Hwan-Seok Seo, Jung-Hwan Lee
Publikováno v:
SPIE Proceedings.
We introduce an extreme ultraviolet lithography (EUVL) mask defect review system (EMDRS) which has been developing in SAMUSNG. It applies a stand-alone high harmonic generation (HHG) EUV source as well as simple EUV optics consisting of a folding mir
Autor:
Byunghoon Lee, Joonmyung Choi, Junghwan Moon, Changyoung Jeong, Muyoung Kim, Hee-Bom Kim, Maenghyo Cho
Publikováno v:
SPIE Proceedings.
For decades, downsizing has been a key issue for high performance and low cost of semiconductor, and extreme ultraviolet lithography is one of the promising candidates to achieve the goal. As a predominant process in extreme ultraviolet lithography o
Autor:
Mun Ja Kim, Taesung Kim, Eok-bong Kim, Dong-Wook Shin, Jung Hun Lee, Seul-Gi Kim, Chan-Uk Jeon, Hee-Bom Kim, Ji-Beom Yoo, Jihoon Na, Soo-Young Kim, Hwan Chul Jeon, Roman Chalykh, Byung-Gook Kim
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII.
Extreme ultraviolet (EUV) lithography has received much attention in the semiconductor industry as a promising candidate to extend dimensional scaling beyond 10nm. Recently EUV pellicle introduction is required to improve particle level inside scanne
Autor:
Hee-Bom Kim, Jae-Min Song, Ju-Mi Bang, Won-Suk Ahn, Chan-Uk Jeon, Byounghoon Seung, Jiyoung Kim, Hwan-Seok Seo
Publikováno v:
Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII.
A new PSM using high transmittance is developed to overcome patterning process limits in ArF immersion lithography. We optimized mask structure, materials, and film thicknesses for patterning process. A new material for phase-shifter is applied to th
Publikováno v:
SPIE Proceedings.
New inorganic resist materials based on metal complexes were investigated for atomic force microscope (AFM) lithography. Phosphoric acids are good for self-assembly because of their strong binding energy. In this work, zirconium phosphonate system ar
Publikováno v:
SPIE Proceedings.
A thin silicon oxy-nitride hard mask on the PSM blank is needed for the feature patterning with the size smaller than 70 nm. It is a good material for hard mask. However, the electrical property of silicon oxy-nitride with the thickness smaller than