Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Hee-Bom Kim"'
Autor:
Hyun-Gyu Kang, Dong Hyeon Kwon, Tae-Gon Kim, Jin-Ho Ahn, Byung-Hoon Lee, Jin-Goo Park, Hwan Seok Seo, Hee Bom Kim
Publikováno v:
Photomask Technology 2022.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5724c86473465750d1f4b6f55e4f8883
https://doi.org/10.1117/12.2641583
https://doi.org/10.1117/12.2641583
Publikováno v:
Microelectronic Engineering. 181:1-9
The impact of non-ideal absorber sidewall angle (SWA) has been a serious problem as target pattern sizes have been reduced. During mask fabrication, it is difficult to obtain an absorber sidewall angle of 90° due to the imperfect etching process. Fu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::623bab37355f2ca1d04d025c3d713a66
https://doi.org/10.1016/j.mee.2017.06.007
https://doi.org/10.1016/j.mee.2017.06.007
Autor:
Junghwan Moon, Muyoung Kim, Maenghyo Cho, Hee-Bom Kim, Byunghoon Lee, Joonmyung Choi, Changyoung Jeong
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IX.
Semiconductor manufacturing industry has reduced the size of wafer for enhanced productivity and performance, and Extreme Ultraviolet (EUV) light source is considered as a promising solution for downsizing. A series of EUV lithography procedures cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab0bd0da535056d26aa6862d7bb47433
https://doi.org/10.1117/12.2296494
https://doi.org/10.1117/12.2296494
Autor:
Mun Ja Kim, Peter D. Buck, Hee-Bom Kim, Ji Hoon Na, Donggun Lee, Hwan-Seok Seo, Emily E. Gallagher, Chan-Uk Jeon, Chang Young Jeong, Sung-Won Kwon
Publikováno v:
Photomask Technology.
Currently, we are supplying defect-free EUV mask for device development. This was one of the biggest challenges in the implementation of EUV lithography for high volume manufacturing (HVM). It became possible to hide all multi-layer defects by using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02be40e87fcb77a99f79f6bc1aff8d54
https://doi.org/10.1117/12.2280687
https://doi.org/10.1117/12.2280687
Autor:
Jihoon Na, Donggun Lee, Jungyoup Kim, Chan-Uk Jeon, Hee-Bom Kim, Changhwan Do, Hong-seok Sim, Hwan-Seok Seo, Jung-Hwan Lee
Publikováno v:
SPIE Proceedings.
We introduce an extreme ultraviolet lithography (EUVL) mask defect review system (EMDRS) which has been developing in SAMUSNG. It applies a stand-alone high harmonic generation (HHG) EUV source as well as simple EUV optics consisting of a folding mir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65920f8d19faf4559fba78f1f6d02df6
https://doi.org/10.1117/12.2257390
https://doi.org/10.1117/12.2257390
Autor:
Byunghoon Lee, Joonmyung Choi, Junghwan Moon, Changyoung Jeong, Muyoung Kim, Hee-Bom Kim, Maenghyo Cho
Publikováno v:
SPIE Proceedings.
For decades, downsizing has been a key issue for high performance and low cost of semiconductor, and extreme ultraviolet lithography is one of the promising candidates to achieve the goal. As a predominant process in extreme ultraviolet lithography o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d092ea88383c97971bf82f91a5b9a19
https://doi.org/10.1117/12.2266540
https://doi.org/10.1117/12.2266540
Autor:
Mun Ja Kim, Taesung Kim, Eok-bong Kim, Dong-Wook Shin, Jung Hun Lee, Seul-Gi Kim, Chan-Uk Jeon, Hee-Bom Kim, Ji-Beom Yoo, Jihoon Na, Soo-Young Kim, Hwan Chul Jeon, Roman Chalykh, Byung-Gook Kim
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII.
Extreme ultraviolet (EUV) lithography has received much attention in the semiconductor industry as a promising candidate to extend dimensional scaling beyond 10nm. Recently EUV pellicle introduction is required to improve particle level inside scanne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67f9240bb1ee7eaa6e40f943f6c4e050
https://doi.org/10.1117/12.2218228
https://doi.org/10.1117/12.2218228
Autor:
Hee-Bom Kim, Jae-Min Song, Ju-Mi Bang, Won-Suk Ahn, Chan-Uk Jeon, Byounghoon Seung, Jiyoung Kim, Hwan-Seok Seo
Publikováno v:
Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII.
A new PSM using high transmittance is developed to overcome patterning process limits in ArF immersion lithography. We optimized mask structure, materials, and film thicknesses for patterning process. A new material for phase-shifter is applied to th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1674eb443fcf8dda0943f03193de7a88
https://doi.org/10.1117/12.2203239
https://doi.org/10.1117/12.2203239
Publikováno v:
SPIE Proceedings.
New inorganic resist materials based on metal complexes were investigated for atomic force microscope (AFM) lithography. Phosphoric acids are good for self-assembly because of their strong binding energy. In this work, zirconium phosphonate system ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83e41b96c5545fe5796ade49dc830ae7
https://doi.org/10.1117/12.2045641
https://doi.org/10.1117/12.2045641
Publikováno v:
SPIE Proceedings.
A thin silicon oxy-nitride hard mask on the PSM blank is needed for the feature patterning with the size smaller than 70 nm. It is a good material for hard mask. However, the electrical property of silicon oxy-nitride with the thickness smaller than
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3125a5fd3edd6a2b54efcf3135d04ac
https://doi.org/10.1117/12.2025457
https://doi.org/10.1117/12.2025457