Zobrazeno 1 - 10 of 37 pro vyhledávání: '"Hee-Bog Kang"'
4
Generation mechanism of large-size invisible defects on Si epitaxial wafers
Autor: Ja-Young Kim, Hee-Bog Kang, Jungkil Park, Kyu hyung Lee, Jung-Won Shin, Bo-Young Lee
Publikováno v: Journal of Crystal Growth. 462:12-17
The new Si epitaxial (epi) defects not seen in scanning electron microscope (SEM) measurements were investigated. Morphologies of these defects were measured by atomic force microscope (AFM) but source of defect was not found in transmission electron
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b9c2610a7a3ce90b8b63d08852be0d70
https://doi.org/10.1016/j.jcrysgro.2017.01.013
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5
Combined Effect of Rapid Thermal Annealing and Crystal Nature on the Gate Oxide Reliability of Czochralski Silicon
Autor: Sung Wook Lee, Anselmo Jaehyeong Lee, Ja-Young Kim, Hee-Bog Kang, Woo-Sung Lee, Jung-Won Shin
Publikováno v: ECS Transactions. 75:77-80
Internal gettering (IG) of metallic impurities (MI) in Czochralski silicon (CZ-Si) is one of the key techniques in modern microelectronic engineering to manufacture high-performance devices with high process yield. Various silicon substrates such as
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::48f5c4cab367ae938aab7f374bf68f21
https://doi.org/10.1149/07504.0077ecst
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6
Delineation of point defect state in Czochralski Si by modified background haze
Autor: Anselmo Jaehyeong Lee, Don-Ha Hwang, Bo-Young Lee, Hee-Bog Kang
Publikováno v: Solid-State Electronics. 164:107743
A novel haze technique for analyzing point-defect distribution in Czochralski Si (CZ-Si) wafers without intentional contamination by transition metals was proposed. Based on the background haze in high-temperature oxidation, a three-step oxidation pr
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::584f4e5f5c5dbac8b089be157c50d4a0
https://doi.org/10.1016/j.sse.2019.107743
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7
The effects of pre-annealing on oxygen precipitation in silicon P/P-epitaxial wafers
Autor: Hee bog Kang, Kyu hyung Lee, Don ha Hwang, Bo-Young Lee
Publikováno v: Journal of Crystal Growth. 531:125361
Herein, the effect of pre-annealing on oxygen precipitation in a silicon P/P-epitaxial wafer was investigated using an experimental approach. Czochralski-grown silicon wafers were annealed at 800–900 °C to enhance their bulk micro defects (BMDs),
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3fa67ca2c781611a9c041856c4f70335
https://doi.org/10.1016/j.jcrysgro.2019.125361
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9
Akademický článek
Evaluation of In Situ Modulus of Compacted Subgrades Using Portable Falling Weight Deflectometer and Plate-Bearing Load Test.
Autor: Jong Ryeol Kim1 jrkim@chonnam.ac.kr, Hee Bog Kang2 kangsung@mail.hanyeong.ac.kr, Daehyeon Kim3 dkim@indot.state.in.us, Dal Su Park4 rabby2000@handongenc.co.kr, Woo Jin Kim5 wjkim@moiza.chonnam.ac.kr
Publikováno v: Journal of Materials in Civil Engineering. Jun2007, Vol. 19 Issue 6, p492-499. 8p. 2 Diagrams, 3 Charts, 10 Graphs.
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10
The Characteristics of Gettering Ability in Advanced Multi-Chip Packaging Thinned Wafer
Autor: Sung Min Hwang, Jang-Seop Kim, Ki-Sang Lee, Ja-Young Kim, Hee-Bog Kang, Yong Shin, Hyun-Yul Park, Byeong-Sam Moon, Sanghyun Lee, Jeong-Hoon An
Publikováno v: ECS Transactions. 50:319-326
System on Chip (SoC) and System in Package (SiP) technologies provide a path for continued improvement in performance, power, cost and size at the system level without relying upon conventional CMOS scaling alone. SiP technology is rapidly evolved fr
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::983ca94f936aa651550a29b15c496f5d
https://doi.org/10.1149/05005.0319ecst
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