Zobrazeno 1 - 10
of 127
pro vyhledávání: '"Hee Sung Kang"'
Publikováno v:
Burns. 46:1857-1866
Introduction Burn injuries are common afflictions; however, conservative wound care frequently leads to poor treatment compliance and physical disability in deep burn patients. Therefore, regenerative biologic materials, which are more effective for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::248ec87a2c62aa98461130e738f1cf37
https://doi.org/10.1016/j.burns.2020.06.019
https://doi.org/10.1016/j.burns.2020.06.019
Autor:
Alban Mariette, Staffan Persson, Hee Sung Kang, Joshua L. Heazlewood, Edwin R. Lampugnani, Berit Ebert
Publikováno v:
Plantcell physiology. 62(12)
Growth, development, structure as well as dynamic adaptations and remodeling processes in plants are largely controlled by properties of their cell walls. These intricate wall structures are mostly made up of different sugars connected through specif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bdf55f0fcaf2ea88df3f0aa3822786cc
https://pubmed.ncbi.nlm.nih.gov/34129041
https://pubmed.ncbi.nlm.nih.gov/34129041
Publikováno v:
Solid-State Electronics. 178:107984
We demonstrate effective reduction of interface states and current collapse in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistor (MISHFETs) with Al2O3 and in-situ AlN passivation layer. Here, first, a 3 nm-thick in-situ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8c784353823d6bff7cc16e876212d59
https://doi.org/10.1016/j.sse.2021.107984
https://doi.org/10.1016/j.sse.2021.107984
Autor:
In Man Kang, Hee-Sung Kang, Young Jun Yoon, Jae Hwa Seo, Min Su Cho, Jung-Hee Lee, Chul-Ho Won
Publikováno v:
Solid-State Electronics. 124:54-57
The pre-passivation surface treatment process with tetramethylammonium hydroxide (TMAH)-based wet solution was proposed for the minimization of the leakage current (Ileak) in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9663e4c400ff91cd52a240b01f2834f
https://doi.org/10.1016/j.sse.2016.06.009
https://doi.org/10.1016/j.sse.2016.06.009
Publikováno v:
ECS Transactions. 75:131-137
GaN-based heterostructure field-effect transistors (HFETs) have been attracted considerably as candidates for next-generation devices for both high-power and high frequency applications, because of its excellent material properties such as high break
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::187220097e53588fbf283329268b91aa
https://doi.org/10.1149/07512.0131ecst
https://doi.org/10.1149/07512.0131ecst
Publikováno v:
Thin Solid Films. 708:138102
This study analyzed the physical and electrical characteristics of the interface reactions between hafnium-based high-k gate dielectrics and a TiN-based metal gate. Decreasing the N2 gas flow ratio (RN2 = N2/Ar+N2) from the physical-vapor-deposited T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b151b0cc6abd659a72ba1220cfd7cd36
https://doi.org/10.1016/j.tsf.2020.138102
https://doi.org/10.1016/j.tsf.2020.138102
Autor:
Young Jun Yoon, Jeongmin Lee, In Man Kang, Jae Hwa Seo, Hee-Sung Kang, Seongjae Cho, Heung-Sik Tae, Seong Min Lee, Jung-Hee Lee, Hye Rim Eun
Publikováno v:
Journal of Nanoscience and Nanotechnology. 15:7430-7435
We have investigated and proposed a highly scaled tunneling field-effect transistor (TFET) based on Ge/GaAs heterojunction with a drain overlap to suppress drain-induced barrier thinning (DIBT) and improve low-power (LP) performance. The highly scale
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::957a2f17b6b53862a37778e754f254e1
https://doi.org/10.1166/jnn.2015.11146
https://doi.org/10.1166/jnn.2015.11146
Autor:
Yong Soo Lee, Young-Jo Kim, Hee-Sung Kang, In Man Kang, Young Jun Yoon, Dong-Seok Kim, Chul-Ho Won, Jung-Hee Lee
Publikováno v:
physica status solidi (a). 212:1116-1121
We present a new semi-insulating carbon-doped GaN/undoped GaN multi-layered buffer structure for AlGaN/GaN heterojunction field effect transistors, which drastically suppresses current collapse in GaN MISHFET with improving the on-current performance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::229425107b239c0fe80c3423d954e8e2
https://doi.org/10.1002/pssa.201431668
https://doi.org/10.1002/pssa.201431668
Autor:
Hee-Sung Kang, In Man Kang, Young-Jo Kim, Jin-Hyuk Bae, Seongjae Cho, Jae Hwa Seo, Young Jun Yoon, Eou-Sik Cho, Jung-Hee Lee
Publikováno v:
Journal of the Korean Physical Society. 65:1579-1584
We have investigated gallium-nitride (GaN)-based metal-oxide-semiconductor field-effect transistors (MOSFETs) having a recessed-gate structure for high-power applications. Recessed-gate GaN-based MOSFETs have been designed with a dual high-k dielectr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec5f54e2a9e0f385f377ec5396f9b7fc
https://doi.org/10.3938/jkps.65.1579
https://doi.org/10.3938/jkps.65.1579
Autor:
Hee-Sung Kang, V. Sindhuri, Dong-Seok Kim, Do-Kywn Kim, Young-Woo Jo, Young-Ho Bae, Young-In Jang, In Man Kang, Jung-Hee Lee, Sung-Ho Hahm
Publikováno v:
JSTS:Journal of Semiconductor Technology and Science. 14:601-608
In this paper, we have characterized the electrical properties related to gate leakage current in AlGaN/GaN MISHFETs with varying the thickness (0 to 10 nm) of Al₂O₃ gate insulator which also serves as a surface protection layer during high-tempe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bee8680b44b4315f102fa52822d4c789
https://doi.org/10.5573/jsts.2014.14.5.601
https://doi.org/10.5573/jsts.2014.14.5.601