Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Hee Sun Yoon"'
Autor:
Eun-Jung Hong, Hee-Sun Yoon
Publikováno v:
JOURNAL OF THE KOREA CONTENTS ASSOCIATION. 22:705-716
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a547cb705753f3a7a640c44dc5a18d97
https://doi.org/10.5392/jkca.2022.22.12.705
https://doi.org/10.5392/jkca.2022.22.12.705
Autor:
Da-In Lee, Hee-Sun Yoon, Jin-Ju Ko, So-Yeon Kim, Hye-Ja Chang, Seyoung Ju, Yu-Ri Yoon, Su-Jin Seon
Publikováno v:
British Food Journal. 119:342-356
Purpose The purpose of this paper is to examine the efficacy of microbial elimination using different sanitizers in raw vegetables (cherry tomatoes, spring onions, Chinese chives, and chicory) and to analyze the efficacy of Escherichia coli O157:H7 r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91d9c7f636f69e2e6aa0a14edba2d0f6
https://doi.org/10.1108/bfj-06-2016-0283
https://doi.org/10.1108/bfj-06-2016-0283
Publikováno v:
Microelectronic Engineering. 53:287-290
Multiple scattering effect is discussed with a low voltage e-beam system. A test layout is designed to figure out the multiple scattering effect. A dark erosion is studied to identify the scattering range. The range is found to be as far as ~15mm wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9df563b1f1913fde98af0375126cdb2a
https://doi.org/10.1016/s0167-9317(00)00316-6
https://doi.org/10.1016/s0167-9317(00)00316-6
Autor:
Hee-Sun Yoon, Sang-Yong Yu, Soon-ho Kim, Seung-Woon Choi, Yong-Hoon Kim, Byung-Cheol Cha, Woo-Sung Han
Publikováno v:
SPIE Proceedings.
CD(Critical Dimension) Non-Uniformity on a mask is normally separable into global and local CD errors by means of their error sources. In general a global CD error trend on a mask shows the properties of each process. On the other hand, local CD erro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdb5070fe70658e04b7251a08bdfceda
https://doi.org/10.1117/12.617080
https://doi.org/10.1117/12.617080
Publikováno v:
Proceedings of 2004 International Symposium on Intelligent Signal Processing and Communication Systems, 2004. ISPACS 2004..
The main concern for a displacement measurement is the performance of a sensor such as speed, resolution, accuracy and so on. The sensors mainly used for displacement measurement are a linear CCD (charge coupled device) and a PSD (position sensitive
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::762943eb8ef5174e8c3a45dbece46e92
https://doi.org/10.1109/ispacs.2004.1439162
https://doi.org/10.1109/ispacs.2004.1439162
Publikováno v:
Optical Microlithography XVIII.
In this article, we will analyze in-field uniformity (IFU) fluctuation of linewidth on wafer considering errors related to mask pellicle process. As gate linewidth becomes smaller, the controllability of in-field uniformity (IFU) plays a key role in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85c6d89245b775dea3ffe56df1dd5e56
https://doi.org/10.1117/12.600281
https://doi.org/10.1117/12.600281
Autor:
Sang-Yong Yu, Hee-Sun Yoon, Seong-Yoon Kim, Soon-ho Kim, Chan-Uk Jeon, Byung-Cheol Cha, Woo-Sung Han
Publikováno v:
SPIE Proceedings.
In this article, we analyzed in-field uniformity (IFU) on wafer considering exposure margin [linewidth variation (nm) per % exposure dose variation (%)] and the MEEF (mask error enhancement factor). As gate linewidth becomes smaller, the controllabil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::859f3933b65f0f1761a28c360ef2acb4
https://doi.org/10.1117/12.569383
https://doi.org/10.1117/12.569383
Autor:
Hee-Sun Yoon, Byung-Gook Kim, Sung-Woon Choi, Woo-Sung Han, Seung-Hune Yang, Sung-Yong Moon, Hojune Lee
Publikováno v:
SPIE Proceedings.
Mask critical dimension (CD) errors are analyzed in case fogging effect is corrected by dose modulation method with comparison of measurement and simulation. In the test mask, an extreme condition from pattern density 0% to 100% is applied for making
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d11754775903793c68a2f72ce70a489
https://doi.org/10.1117/12.557713
https://doi.org/10.1117/12.557713
Autor:
Myoung-Soo Lee, Ji-Soong Park, Chang-Hwan Kim, In-Gyun Shin, Hee-Sun Yoon, Sung-Hyuk Kim, Sung-Woon Choi, Woo-Sung Han
Publikováno v:
SPIE Proceedings.
In the ArF lithography for sub-100nm, PSM (Phase Shift Mask) has been considered as one of the basic RETs (Resolution Enhancement Techniques). Nowadays, besides attenuated PSM, alternating PSM and CPL (Chromeless Phase Lithography) containing Cr patc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f09a01ddf91e79825f2307e4edf81bc
https://doi.org/10.1117/12.535976
https://doi.org/10.1117/12.535976
Autor:
Won-Il Cho, Seong-Woon Choi, Moon-Gyu Sung, Won-Suk Ahn, Jung-Min Sohn, Hee-Sun Yoon, Sung-Yong Cho, Seong-Yong Moon
Publikováno v:
SPIE Proceedings.
As the design rule of lithography becomes smaller, printability of reticle defect to wafer is critical for the photomask manufacturing technology. In order to improve the controllability of reticle defects, inspection and repair systems are expanding
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d638b43e20c9e54da35d78eeded7560
https://doi.org/10.1117/12.504055
https://doi.org/10.1117/12.504055