Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Hee Koo Yoon"'
Publikováno v:
Integrated Ferroelectrics. 36:285-294
Ru films were deposited on TiN and SiO2 layers by metal organic chemical vapor deposition (MOCVD) at various deposition temperatures. We have used Ru(C8H13O2)3 as a Ru source and O2 as a reaction gas. The deposition of Ru films was controlled by surf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a384804c291fb0006d24baa2545639b1
https://doi.org/10.1080/10584580108015550
https://doi.org/10.1080/10584580108015550
Publikováno v:
Integrated Ferroelectrics. 37:3-10
ECD Pt process has been developed as an electrode for sub-0.lμm technology device. Using ECD Pt process, it is possible to fabricate higher. stacked BST capacitor with a lot of advantages such as selective deposition which is storage node patterning
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f075fd772239056dd149215bc740464e
https://doi.org/10.1080/10584580108015659
https://doi.org/10.1080/10584580108015659
Autor:
Hazoong Kim, Min Huh, Ysung Kim, Hyunpil Noh, Seongjoon Lee, Hee-koo Yoon, Jinwon Park, Gucheol Jeong, Dongseok Kim, Jaemin Ahn, Suock Jeong, Sang-Don Lee, Jaebuhm Suh, Woncheol Cho
Publikováno v:
2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184).
An 8F/sup 2/ stack DRAM cell, 0.115 /spl mu/m/sup 2/ in size, has been successfully integrated using a selective epitaxial plug scheme for landing plug contacts and poly metal gates and MIM COB capacitors, by which cell working has been proven under
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53bf1bab4858ca4343c3e6eb9d6bf51a
https://doi.org/10.1109/vlsit.2001.934929
https://doi.org/10.1109/vlsit.2001.934929
Autor:
Se-Aug Jang, Kwan-Yong Lim, Jin Won Park, In-Seok Yeo, Heung-Jae Cho, Tae-Kyun Kim, You-Seok Suh, Tae-Ho Cha, Jae-Sung Roh, Dae-Gyu Park, Hee-koo Yoon, Veena Misra
Publikováno v:
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
This report describes thermally stable dual metal gate electrodes for surface channel Si CMOS devices. We found that the ternary metal nitrides, i.e., Ti/sub 1-x/Al/sub x/N/sub y/ (TiAlN) and TaSi/sub x/N/sub y/ (TaSiN) films, are stable up to 1000/s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54fc77c492acd305ee437a3a0bd38eb5
https://doi.org/10.1109/iedm.2001.979597
https://doi.org/10.1109/iedm.2001.979597
Autor:
Kwan-Yong Lim, Dae-Gyu Park, Hee-koo Yoon, Jinwon Park, In-Seok Yeo, Heung-Jae Cho, Jung-Kyu Ko
Publikováno v:
Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc03f8ed40afd466e733c519ebc2c9bf
https://doi.org/10.7567/ssdm.2001.b-9-5
https://doi.org/10.7567/ssdm.2001.b-9-5
Autor:
Kwan-Yong Lim, In-Seok Yeo, Dae-Gyu Park, Il-Sang Choi, Jinwon Park, Heung-Jae Cho, Jung-Kyu Ko, Hee-koo Yoon, Joong-Jung Kim, Jun-Mo Yang, Jae-Young Kim
Publikováno v:
Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc332ad058a3b697d1d8e5499d83b410
https://doi.org/10.7567/ssdm.2001.b-8-3
https://doi.org/10.7567/ssdm.2001.b-8-3
Publikováno v:
MRS Proceedings. 655
Polarization degradation due to metal etch and/or photoresist(PR) strip processes has been investigated for Pt/SrBi2Ta2O9(SBT)/Pt ferroelectric capacitors. Interconnect metal line consisting of TiN/Al/Ti/TiN/Ti layers has been patterned by normal pho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4b9dfa1ce38cbcf5942ad6305d7c96d
https://doi.org/10.1557/proc-655-cc2.8.1
https://doi.org/10.1557/proc-655-cc2.8.1
Autor:
Jin Ho Choi, Sook-Rak Ma, Gug-Seon Choi, Hee-Koo Yoon, Kyung-Sik Chang, Jong-Sub Yoon, Jong-Wan Nam, Yoon-Jong Lee
Publikováno v:
Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61f1f99d08bb1cd86df1212a3db659d0
https://doi.org/10.7567/ssdm.1994.ld-18
https://doi.org/10.7567/ssdm.1994.ld-18
Autor:
Yong-sik Yu, Jong-Bum Park, Hee-Koo Yoon, Younsoo Kim, Deok-sin Kil, Dong-Soo Yoon, Ho Jin Cho, Jae-Sung Roh, Chang-Rock Song
Publikováno v:
Japanese Journal of Applied Physics. 40:3260
Leakage current characteristics of (Ba,Sr)TiO3 (BST) thin films deposited by metal-organic chemical vapor deposition (MOCVD) on Ru bottom electrodes were investigated. CVD-BST thin film on an Ru electrode showed much higher leakage current density th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94f48325bc0f37b56332728648b153a5
https://doi.org/10.1143/jjap.40.3260
https://doi.org/10.1143/jjap.40.3260
Publikováno v:
Japanese Journal of Applied Physics. 35:892
We present a systematic experimental study of the electrical stress effects in p-channel metal-oxide-semiconductor thin film transistors (pMOS TFTs) used as active loads in high density static random access memory (SRAM) circuits. Specifically, the e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf87e2d35167037afefcf3cfb5b642a5
https://doi.org/10.1143/jjap.35.892
https://doi.org/10.1143/jjap.35.892