Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Hee Hwan Choe"'
Publikováno v:
Applied Science and Convergence Technology. 29:62-66
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bc1c3e3a3a7a3a3c6d8b2b5a527ccec
https://doi.org/10.5757/asct.2020.29.3.062
https://doi.org/10.5757/asct.2020.29.3.062
Publikováno v:
Advances in Materials Science and Engineering, Vol 2014 (2014)
The characteristics of the dry etching of SiNx:H thin films for display devices using SF6/O2 and NF3/O2 were investigated using a dual-frequency capacitively coupled plasma reactive ion etching (CCP-RIE) system. The investigation was carried out by v
Externí odkaz:
https://doaj.org/article/209740fb72e242f5a665aa71666c5916
Publikováno v:
Plasma Science and Technology. 16:758-766
Spatial distributions of plasma parameters such as electron density, electron temperature and electric potential were investigated using a commercial simulation software (COMSOLTM) to predict the effects of antenna configuration in a large area induc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ba250eb3594f90cd9d5ddb4447c3b28
https://doi.org/10.1088/1009-0630/16/8/06
https://doi.org/10.1088/1009-0630/16/8/06
Autor:
Seon-Geun, Oh, Young-Jun, Lee, Jae-Hong, Jeon, Young-Jin, Kim, Jong-Hyun, Seo, Hee-Hwan, Choe
Publikováno v:
Journal of nanoscience and nanotechnology. 15(11)
As research and development of high-performance devices are becoming increasingly important in the flat panel display industry, new structures and processes are essential to improve the performance of the TFT backplane. Also, high-density plasma syst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::0abce30f5cf34251c7ceaa26993778f7
https://pubmed.ncbi.nlm.nih.gov/26726552
https://pubmed.ncbi.nlm.nih.gov/26726552
Publikováno v:
Journal of the Korean Physical Society. 52:300-307
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4352afa7dc58b1bee60916119f03219
https://doi.org/10.3938/jkps.52.300
https://doi.org/10.3938/jkps.52.300
Publikováno v:
Solid State Phenomena. :423-426
In order to improve long term stability of a-Si:H TFT for AM-OLED application a new driving method compensating Vth shift requires a new device structure of which hole injection is enhanced. ITO film was investigated for the hole injection material b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1d483abcf42bd4ef56e3859e2e1ae99
https://doi.org/10.4028/www.scientific.net/ssp.124-126.423
https://doi.org/10.4028/www.scientific.net/ssp.124-126.423
Publikováno v:
Solid State Phenomena. :387-390
Amorphous silicon thin films were deposited below 160oC on PES plastic films using PECVD. After thin film deposition using PECVD, thin film failures such as film delamination and cracking often occurred. For successful growth of thin films (about 200
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea5384abb80e6cfb7d1664816f817eb0
https://doi.org/10.4028/www.scientific.net/ssp.124-126.387
https://doi.org/10.4028/www.scientific.net/ssp.124-126.387
Autor:
O Dae Kwon, Yong-Hyeon Shin, Dae Jin Seong, Kang Woong Lee, Su Jin Yoo, Jung-Hyung Kim, Jae-Hong Jeon, Jong Hyun Seo, Hee Hwan Choe
Publikováno v:
Solid State Phenomena. :327-330
V-I probe measurement is usually used for a method of fault detection of plasma discharges. In this report, a method for monitoring plasma parameter using V-I probe is proposed. Data from the V-I probe were analyzed to estimate the plasma parameters,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea4398cdcdbc2e19d751e6cd1104a8ea
https://doi.org/10.4028/www.scientific.net/ssp.124-126.327
https://doi.org/10.4028/www.scientific.net/ssp.124-126.327
Autor:
Sang-Gab Kim, Hee Hwan Choe
Publikováno v:
Semiconductor Science and Technology. 19:839-845
The n+ etching process is investigated for the fabrication of TFT-LCD (thin film transistor liquid crystal display) deposited with low resistance data lines of Mo/Al/Mo. Problems of consumption of the upper Mo layer and contamination of the channel a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c86400d07b8a1226e4ff7dacea525a81
https://doi.org/10.1088/0268-1242/19/7/010
https://doi.org/10.1088/0268-1242/19/7/010
Autor:
Byoung-Kwan Song, Young-Joon Lee, Sang-Gab Kim, Hee-hwan Choe, Moon-Pyo Hong, Geun Young Yeom, Sang-Duk Park
Publikováno v:
Japanese Journal of Applied Physics. 42:286-290
In this study, Ag thin films deposited on glass were etched using inductively coupled Cl2-based plasmas and the effects of various Cl2-based gas mixtures on the formation of reactive byproducts affecting Ag etching were investigated. When Cl2-based g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0c7616448f07f8d857990d3f36ac71c
https://doi.org/10.1143/jjap.42.286
https://doi.org/10.1143/jjap.42.286